On the identification of Sb2Se3 using Raman scattering

Detalhes bibliográficos
Autor(a) principal: Shongalova, A.
Data de Publicação: 2018
Outros Autores: Correia, M. R., Vermang, B., Cunha, J. M. V., Salomé, P. M. P., Fernandes, P. A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10773/30536
Resumo: Robust evidences are presented that show that the Raman mode close to 250 cm-1 in Sb2Se3 thin films does not belong to this binary compound. A study of the Raman spectrum power dependency revealed the formation of Sb2O3 for high values of power excitation when these measurements are done in normal atmospheric conditions. In order to complement this study, Sb2Se3 thin films were annealed to mimic the thermal conditions of Raman measurements and characterized by X-ray diffraction technique. These measurements showed that the compound Sb2Se3 can be replaced by Sb2O3 under those conditions and a heat-assisted chemical process explains these findings. Furthermore, it is shown what the Raman conditions that are needed for correct measurements to be performed.
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spelling On the identification of Sb2Se3 using Raman scatteringAntimony bi-selenide Sb2Se3Thin filmsRaman scattering (RS)SemiconductorsRobust evidences are presented that show that the Raman mode close to 250 cm-1 in Sb2Se3 thin films does not belong to this binary compound. A study of the Raman spectrum power dependency revealed the formation of Sb2O3 for high values of power excitation when these measurements are done in normal atmospheric conditions. In order to complement this study, Sb2Se3 thin films were annealed to mimic the thermal conditions of Raman measurements and characterized by X-ray diffraction technique. These measurements showed that the compound Sb2Se3 can be replaced by Sb2O3 under those conditions and a heat-assisted chemical process explains these findings. Furthermore, it is shown what the Raman conditions that are needed for correct measurements to be performed.Materials Research Society; Cambridge University Press2021-02-08T12:36:46Z2018-09-01T00:00:00Z2018-09info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/30536eng2159-685910.1557/mrc.2018.94Shongalova, A.Correia, M. R.Vermang, B.Cunha, J. M. V.Salomé, P. M. P.Fernandes, P. A.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:58:59Zoai:ria.ua.pt:10773/30536Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:02:35.906503Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv On the identification of Sb2Se3 using Raman scattering
title On the identification of Sb2Se3 using Raman scattering
spellingShingle On the identification of Sb2Se3 using Raman scattering
Shongalova, A.
Antimony bi-selenide Sb2Se3
Thin films
Raman scattering (RS)
Semiconductors
title_short On the identification of Sb2Se3 using Raman scattering
title_full On the identification of Sb2Se3 using Raman scattering
title_fullStr On the identification of Sb2Se3 using Raman scattering
title_full_unstemmed On the identification of Sb2Se3 using Raman scattering
title_sort On the identification of Sb2Se3 using Raman scattering
author Shongalova, A.
author_facet Shongalova, A.
Correia, M. R.
Vermang, B.
Cunha, J. M. V.
Salomé, P. M. P.
Fernandes, P. A.
author_role author
author2 Correia, M. R.
Vermang, B.
Cunha, J. M. V.
Salomé, P. M. P.
Fernandes, P. A.
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Shongalova, A.
Correia, M. R.
Vermang, B.
Cunha, J. M. V.
Salomé, P. M. P.
Fernandes, P. A.
dc.subject.por.fl_str_mv Antimony bi-selenide Sb2Se3
Thin films
Raman scattering (RS)
Semiconductors
topic Antimony bi-selenide Sb2Se3
Thin films
Raman scattering (RS)
Semiconductors
description Robust evidences are presented that show that the Raman mode close to 250 cm-1 in Sb2Se3 thin films does not belong to this binary compound. A study of the Raman spectrum power dependency revealed the formation of Sb2O3 for high values of power excitation when these measurements are done in normal atmospheric conditions. In order to complement this study, Sb2Se3 thin films were annealed to mimic the thermal conditions of Raman measurements and characterized by X-ray diffraction technique. These measurements showed that the compound Sb2Se3 can be replaced by Sb2O3 under those conditions and a heat-assisted chemical process explains these findings. Furthermore, it is shown what the Raman conditions that are needed for correct measurements to be performed.
publishDate 2018
dc.date.none.fl_str_mv 2018-09-01T00:00:00Z
2018-09
2021-02-08T12:36:46Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10773/30536
url http://hdl.handle.net/10773/30536
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2159-6859
10.1557/mrc.2018.94
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Materials Research Society; Cambridge University Press
publisher.none.fl_str_mv Materials Research Society; Cambridge University Press
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
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