Electrochemical and optical properties of CeO2-SnO2 and CeO2-SnO2:X (X = Li, C, Si) films

• Autor(a) principal: Berton,Marcos A.C.
• Data de Publicação: 2001
• Outros Autores: Avellaneda,César O.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Materials research (São Carlos. Online)
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392001000400004
• topic: CeO2-SnO2 doped films; ion storage; sol-gel films

Thin solid films of CeO2-SnO2 (17 mol% Sn) and CeO2-SnO2:X (X = Li, C and Si) were prepared by the sol-gel route, using an aqueous-based process. The addition of Li, C and Si to the precursor solution leads to films with different electrochemical performances. The films were deposited by the dip-coating technique on ITO coated glass (Donnelly Glass) at a speed of 10 cm/min and submitted to a final thermal treatment at 450 °C during 10 min in air. The electrochemical and optical properties of the films were determined from the cyclic voltammetry and chronoamperometry measurements using 0.1 M LiOH as supporting electrolyte. The ion storage capacity of the films was investigated using in situ spectroelectrochemical method and during the insertion/extraction process the films remained transparent. The powders were characterized by thermal analysis (DSC/TGA) and X-ray diffraction.