Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature
Autor(a) principal: | |
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Data de Publicação: | 2020 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Materials research (São Carlos. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000300221 |
Resumo: | This study reports the structural properties of zinc oxide thin films co-doped with aluminum and nitrogen (ZnO:Al-N) grown by RF magnetron sputtering from an AZO (ZnO with 2 wt% Al2O3) target under nitrogen (N2) atmosphere at room temperature (RT). Nitrogen partial pressures of 0.00, 0.10, 0.25 and 1.00 mTorr were used. The film thickness was around 270 nm. Ultraviolet-Vis-NIR transmittance (T) spectra of the films revealed T values of 80 to 85% in the 400 to 700 nm wavelength range. XRD results indicated that the films had a hexagonal wurtzite structure and were preferentially oriented in the (002) plane. Analyses by EDS indicated that the N atoms tend to be incorporated into the ZnO matrix at the expense of oxygen atoms. The ideal [N]/[Al] was obtained at a N2 partial pressure of 0.25 mTorr, producing a p-type film. For a [N]/[Al] of 1.53, the film also exhibited p-type conduction with an electrical resistivity of 31.92 Ω cm, mobility of 18.65 cm2/V s and carrier density of 1.22 x 1016 cm-3. The low carrier density is attributed to the energetically favorable formation of inactive nitrogen phases instead of acceptor-receiver-acceptor complexes, even at the ideal [N]/[Al]. |
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Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperaturezinc oxidep-type dopingco-dopingZnO:Al-Nroom temperatureThis study reports the structural properties of zinc oxide thin films co-doped with aluminum and nitrogen (ZnO:Al-N) grown by RF magnetron sputtering from an AZO (ZnO with 2 wt% Al2O3) target under nitrogen (N2) atmosphere at room temperature (RT). Nitrogen partial pressures of 0.00, 0.10, 0.25 and 1.00 mTorr were used. The film thickness was around 270 nm. Ultraviolet-Vis-NIR transmittance (T) spectra of the films revealed T values of 80 to 85% in the 400 to 700 nm wavelength range. XRD results indicated that the films had a hexagonal wurtzite structure and were preferentially oriented in the (002) plane. Analyses by EDS indicated that the N atoms tend to be incorporated into the ZnO matrix at the expense of oxygen atoms. The ideal [N]/[Al] was obtained at a N2 partial pressure of 0.25 mTorr, producing a p-type film. For a [N]/[Al] of 1.53, the film also exhibited p-type conduction with an electrical resistivity of 31.92 Ω cm, mobility of 18.65 cm2/V s and carrier density of 1.22 x 1016 cm-3. The low carrier density is attributed to the energetically favorable formation of inactive nitrogen phases instead of acceptor-receiver-acceptor complexes, even at the ideal [N]/[Al].ABM, ABC, ABPol2020-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000300221Materials Research v.23 n.3 2020reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/1980-5373-mr-2020-0049info:eu-repo/semantics/openAccessRamos,RaulGodoy,Marcio Peron Franco deRangel,Elidiane CiprianoCruz,Nilson Cristino daDurrant,Steven F.Bortoleto,José Roberto Ribeiroeng2020-08-28T00:00:00Zoai:scielo:S1516-14392020000300221Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2020-08-28T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.none.fl_str_mv |
Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature |
title |
Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature |
spellingShingle |
Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature Ramos,Raul zinc oxide p-type doping co-doping ZnO:Al-N room temperature |
title_short |
Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature |
title_full |
Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature |
title_fullStr |
Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature |
title_full_unstemmed |
Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature |
title_sort |
Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature |
author |
Ramos,Raul |
author_facet |
Ramos,Raul Godoy,Marcio Peron Franco de Rangel,Elidiane Cipriano Cruz,Nilson Cristino da Durrant,Steven F. Bortoleto,José Roberto Ribeiro |
author_role |
author |
author2 |
Godoy,Marcio Peron Franco de Rangel,Elidiane Cipriano Cruz,Nilson Cristino da Durrant,Steven F. Bortoleto,José Roberto Ribeiro |
author2_role |
author author author author author |
dc.contributor.author.fl_str_mv |
Ramos,Raul Godoy,Marcio Peron Franco de Rangel,Elidiane Cipriano Cruz,Nilson Cristino da Durrant,Steven F. Bortoleto,José Roberto Ribeiro |
dc.subject.por.fl_str_mv |
zinc oxide p-type doping co-doping ZnO:Al-N room temperature |
topic |
zinc oxide p-type doping co-doping ZnO:Al-N room temperature |
description |
This study reports the structural properties of zinc oxide thin films co-doped with aluminum and nitrogen (ZnO:Al-N) grown by RF magnetron sputtering from an AZO (ZnO with 2 wt% Al2O3) target under nitrogen (N2) atmosphere at room temperature (RT). Nitrogen partial pressures of 0.00, 0.10, 0.25 and 1.00 mTorr were used. The film thickness was around 270 nm. Ultraviolet-Vis-NIR transmittance (T) spectra of the films revealed T values of 80 to 85% in the 400 to 700 nm wavelength range. XRD results indicated that the films had a hexagonal wurtzite structure and were preferentially oriented in the (002) plane. Analyses by EDS indicated that the N atoms tend to be incorporated into the ZnO matrix at the expense of oxygen atoms. The ideal [N]/[Al] was obtained at a N2 partial pressure of 0.25 mTorr, producing a p-type film. For a [N]/[Al] of 1.53, the film also exhibited p-type conduction with an electrical resistivity of 31.92 Ω cm, mobility of 18.65 cm2/V s and carrier density of 1.22 x 1016 cm-3. The low carrier density is attributed to the energetically favorable formation of inactive nitrogen phases instead of acceptor-receiver-acceptor complexes, even at the ideal [N]/[Al]. |
publishDate |
2020 |
dc.date.none.fl_str_mv |
2020-01-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000300221 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000300221 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/1980-5373-mr-2020-0049 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
Materials Research v.23 n.3 2020 reponame:Materials research (São Carlos. Online) instname:Universidade Federal de São Carlos (UFSCAR) instacron:ABM ABC ABPOL |
instname_str |
Universidade Federal de São Carlos (UFSCAR) |
instacron_str |
ABM ABC ABPOL |
institution |
ABM ABC ABPOL |
reponame_str |
Materials research (São Carlos. Online) |
collection |
Materials research (São Carlos. Online) |
repository.name.fl_str_mv |
Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR) |
repository.mail.fl_str_mv |
dedz@power.ufscar.br |
_version_ |
1754212677299732480 |