Co-doped p-type ZnO:Al-N thin films grown by RF-Magnetron sputtering at room temperature

Detalhes bibliográficos
Autor(a) principal: Ramos, Raul [UNESP]
Data de Publicação: 2020
Outros Autores: de Godoy, Marcio Peron Franco, Rangel, Elidiane Cipriano [UNESP], da Cruz, Nilson Cristino [UNESP], Durrant, Steven F. [UNESP], Bortoleto, José Roberto Ribeiro [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1590/1980-5373-MR-2020-0049
http://hdl.handle.net/11449/208028
Resumo: This study reports the structural properties of zinc oxide thin films co-doped with aluminum and nitrogen (ZnO:Al-N) grown by RF magnetron sputtering from an AZO (ZnO with 2 wt% Al2O3) target under nitrogen (N2) atmosphere at room temperature (RT). Nitrogen partial pressures of 0.00, 0.10, 0.25 and 1.00 mTorr were used. The film thickness was around 270 nm. Ultraviolet-Vis-NIR transmittance (T) spectra of the films revealed T values of 80 to 85% in the 400 to 700 nm wavelength range. XRD results indicated that the films had a hexagonal wurtzite structure and were preferentially oriented in the (002) plane. Analyses by EDS indicated that the N atoms tend to be incorporated into the ZnO matrix at the expense of oxygen atoms. The ideal [N]/[Al] was obtained at a N2 partial pressure of 0.25 mTorr, producing a p-type film. For a [N]/[Al] of 1.53, the film also exhibited p-type conduction with an electrical resistivity of 31.92 Ω cm, mobility of 18.65 cm2/V s and carrier density of 1.22 x 1016 cm-3. The low carrier density is attributed to the energetically favorable formation of inactive nitrogen phases instead of acceptor-receiver-acceptor complexes, even at the ideal [N]/[Al].
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spelling Co-doped p-type ZnO:Al-N thin films grown by RF-Magnetron sputtering at room temperatureCo-dopingP-type dopingRoom temperatureZinc oxideZnO:Al-NThis study reports the structural properties of zinc oxide thin films co-doped with aluminum and nitrogen (ZnO:Al-N) grown by RF magnetron sputtering from an AZO (ZnO with 2 wt% Al2O3) target under nitrogen (N2) atmosphere at room temperature (RT). Nitrogen partial pressures of 0.00, 0.10, 0.25 and 1.00 mTorr were used. The film thickness was around 270 nm. Ultraviolet-Vis-NIR transmittance (T) spectra of the films revealed T values of 80 to 85% in the 400 to 700 nm wavelength range. XRD results indicated that the films had a hexagonal wurtzite structure and were preferentially oriented in the (002) plane. Analyses by EDS indicated that the N atoms tend to be incorporated into the ZnO matrix at the expense of oxygen atoms. The ideal [N]/[Al] was obtained at a N2 partial pressure of 0.25 mTorr, producing a p-type film. For a [N]/[Al] of 1.53, the film also exhibited p-type conduction with an electrical resistivity of 31.92 Ω cm, mobility of 18.65 cm2/V s and carrier density of 1.22 x 1016 cm-3. The low carrier density is attributed to the energetically favorable formation of inactive nitrogen phases instead of acceptor-receiver-acceptor complexes, even at the ideal [N]/[Al].Universidade Estadual Paulista (UNESP) Instituto de Ciência e Tecnologia de SorocabaUniversidade Federal de São Carlos (UFSCar) Departamento de FísicaUniversidade Estadual Paulista (UNESP) Instituto de Ciência e Tecnologia de SorocabaUniversidade Estadual Paulista (Unesp)Universidade Federal de São Carlos (UFSCar)Ramos, Raul [UNESP]de Godoy, Marcio Peron FrancoRangel, Elidiane Cipriano [UNESP]da Cruz, Nilson Cristino [UNESP]Durrant, Steven F. [UNESP]Bortoleto, José Roberto Ribeiro [UNESP]2021-06-25T11:05:10Z2021-06-25T11:05:10Z2020-08-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://dx.doi.org/10.1590/1980-5373-MR-2020-0049Materials Research, v. 23, n. 3, 2020.1980-53731516-1439http://hdl.handle.net/11449/20802810.1590/1980-5373-MR-2020-0049S1516-143920200003002212-s2.0-85092232107S1516-14392020000300221.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Researchinfo:eu-repo/semantics/openAccess2023-12-29T06:16:04Zoai:repositorio.unesp.br:11449/208028Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T21:33:48.775414Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Co-doped p-type ZnO:Al-N thin films grown by RF-Magnetron sputtering at room temperature
title Co-doped p-type ZnO:Al-N thin films grown by RF-Magnetron sputtering at room temperature
spellingShingle Co-doped p-type ZnO:Al-N thin films grown by RF-Magnetron sputtering at room temperature
Ramos, Raul [UNESP]
Co-doping
P-type doping
Room temperature
Zinc oxide
ZnO:Al-N
title_short Co-doped p-type ZnO:Al-N thin films grown by RF-Magnetron sputtering at room temperature
title_full Co-doped p-type ZnO:Al-N thin films grown by RF-Magnetron sputtering at room temperature
title_fullStr Co-doped p-type ZnO:Al-N thin films grown by RF-Magnetron sputtering at room temperature
title_full_unstemmed Co-doped p-type ZnO:Al-N thin films grown by RF-Magnetron sputtering at room temperature
title_sort Co-doped p-type ZnO:Al-N thin films grown by RF-Magnetron sputtering at room temperature
author Ramos, Raul [UNESP]
author_facet Ramos, Raul [UNESP]
de Godoy, Marcio Peron Franco
Rangel, Elidiane Cipriano [UNESP]
da Cruz, Nilson Cristino [UNESP]
Durrant, Steven F. [UNESP]
Bortoleto, José Roberto Ribeiro [UNESP]
author_role author
author2 de Godoy, Marcio Peron Franco
Rangel, Elidiane Cipriano [UNESP]
da Cruz, Nilson Cristino [UNESP]
Durrant, Steven F. [UNESP]
Bortoleto, José Roberto Ribeiro [UNESP]
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Universidade Federal de São Carlos (UFSCar)
dc.contributor.author.fl_str_mv Ramos, Raul [UNESP]
de Godoy, Marcio Peron Franco
Rangel, Elidiane Cipriano [UNESP]
da Cruz, Nilson Cristino [UNESP]
Durrant, Steven F. [UNESP]
Bortoleto, José Roberto Ribeiro [UNESP]
dc.subject.por.fl_str_mv Co-doping
P-type doping
Room temperature
Zinc oxide
ZnO:Al-N
topic Co-doping
P-type doping
Room temperature
Zinc oxide
ZnO:Al-N
description This study reports the structural properties of zinc oxide thin films co-doped with aluminum and nitrogen (ZnO:Al-N) grown by RF magnetron sputtering from an AZO (ZnO with 2 wt% Al2O3) target under nitrogen (N2) atmosphere at room temperature (RT). Nitrogen partial pressures of 0.00, 0.10, 0.25 and 1.00 mTorr were used. The film thickness was around 270 nm. Ultraviolet-Vis-NIR transmittance (T) spectra of the films revealed T values of 80 to 85% in the 400 to 700 nm wavelength range. XRD results indicated that the films had a hexagonal wurtzite structure and were preferentially oriented in the (002) plane. Analyses by EDS indicated that the N atoms tend to be incorporated into the ZnO matrix at the expense of oxygen atoms. The ideal [N]/[Al] was obtained at a N2 partial pressure of 0.25 mTorr, producing a p-type film. For a [N]/[Al] of 1.53, the film also exhibited p-type conduction with an electrical resistivity of 31.92 Ω cm, mobility of 18.65 cm2/V s and carrier density of 1.22 x 1016 cm-3. The low carrier density is attributed to the energetically favorable formation of inactive nitrogen phases instead of acceptor-receiver-acceptor complexes, even at the ideal [N]/[Al].
publishDate 2020
dc.date.none.fl_str_mv 2020-08-01
2021-06-25T11:05:10Z
2021-06-25T11:05:10Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1590/1980-5373-MR-2020-0049
Materials Research, v. 23, n. 3, 2020.
1980-5373
1516-1439
http://hdl.handle.net/11449/208028
10.1590/1980-5373-MR-2020-0049
S1516-14392020000300221
2-s2.0-85092232107
S1516-14392020000300221.pdf
url http://dx.doi.org/10.1590/1980-5373-MR-2020-0049
http://hdl.handle.net/11449/208028
identifier_str_mv Materials Research, v. 23, n. 3, 2020.
1980-5373
1516-1439
10.1590/1980-5373-MR-2020-0049
S1516-14392020000300221
2-s2.0-85092232107
S1516-14392020000300221.pdf
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Materials Research
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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