Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample

Detalhes bibliográficos
Autor(a) principal: Viana,Emilson Ribeiro
Data de Publicação: 2012
Outros Autores: Ribeiro,Geraldo Mathias, Oliveira,Alfredo Gontijo de, Peres,Marcelos Lima, Rubinger,Rero Marques, Rubinger,Carla Patrícia Lacerda
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000400008
Resumo: Magnetoresistance measurements were performed on an illuminated semi-insulating GaAs sample with intrinsic deep level defects. Electrical carriers were photo-generated under light excitation and positive magnetoresistance for B < 0.2 T was observed in the whole range of temperatures measured (220-315 K). Using the model developed by H. Fukuyama and K. Hoshino, we interpreted the positive magnetoresistance as mainly caused by weak antilocalization effects over hole carriers for T &gt; 240 K. The high disorder originated from the low temperature growth of the sample leads to the strong localization of carriers and gives rise to the positive magnetoresistance observed at temperatures as high as room temperature.
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spelling Antilocalization effect on photo-generated carriers in semi-insulating GaAs samplesemi-insulating GaAsdeep-level defectsantilocalizationMagnetoresistance measurements were performed on an illuminated semi-insulating GaAs sample with intrinsic deep level defects. Electrical carriers were photo-generated under light excitation and positive magnetoresistance for B < 0.2 T was observed in the whole range of temperatures measured (220-315 K). Using the model developed by H. Fukuyama and K. Hoshino, we interpreted the positive magnetoresistance as mainly caused by weak antilocalization effects over hole carriers for T &gt; 240 K. The high disorder originated from the low temperature growth of the sample leads to the strong localization of carriers and gives rise to the positive magnetoresistance observed at temperatures as high as room temperature.ABM, ABC, ABPol2012-08-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000400008Materials Research v.15 n.4 2012reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14392012005000065info:eu-repo/semantics/openAccessViana,Emilson RibeiroRibeiro,Geraldo MathiasOliveira,Alfredo Gontijo dePeres,Marcelos LimaRubinger,Rero MarquesRubinger,Carla Patrícia Lacerdaeng2012-08-24T00:00:00Zoai:scielo:S1516-14392012000400008Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2012-08-24T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
title Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
spellingShingle Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
Viana,Emilson Ribeiro
semi-insulating GaAs
deep-level defects
antilocalization
title_short Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
title_full Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
title_fullStr Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
title_full_unstemmed Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
title_sort Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
author Viana,Emilson Ribeiro
author_facet Viana,Emilson Ribeiro
Ribeiro,Geraldo Mathias
Oliveira,Alfredo Gontijo de
Peres,Marcelos Lima
Rubinger,Rero Marques
Rubinger,Carla Patrícia Lacerda
author_role author
author2 Ribeiro,Geraldo Mathias
Oliveira,Alfredo Gontijo de
Peres,Marcelos Lima
Rubinger,Rero Marques
Rubinger,Carla Patrícia Lacerda
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Viana,Emilson Ribeiro
Ribeiro,Geraldo Mathias
Oliveira,Alfredo Gontijo de
Peres,Marcelos Lima
Rubinger,Rero Marques
Rubinger,Carla Patrícia Lacerda
dc.subject.por.fl_str_mv semi-insulating GaAs
deep-level defects
antilocalization
topic semi-insulating GaAs
deep-level defects
antilocalization
description Magnetoresistance measurements were performed on an illuminated semi-insulating GaAs sample with intrinsic deep level defects. Electrical carriers were photo-generated under light excitation and positive magnetoresistance for B < 0.2 T was observed in the whole range of temperatures measured (220-315 K). Using the model developed by H. Fukuyama and K. Hoshino, we interpreted the positive magnetoresistance as mainly caused by weak antilocalization effects over hole carriers for T &gt; 240 K. The high disorder originated from the low temperature growth of the sample leads to the strong localization of carriers and gives rise to the positive magnetoresistance observed at temperatures as high as room temperature.
publishDate 2012
dc.date.none.fl_str_mv 2012-08-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000400008
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000400008
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S1516-14392012005000065
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.15 n.4 2012
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
_version_ 1754212661333065728

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