Ionizing radiation hardness tests of GaN HEMTs for harsh environments

Detalhes bibliográficos
Autor(a) principal: VILAS BOAS, ALEXIS C.
Data de Publicação: 2021
Outros Autores: MELO, MARCO ANTONIO ASSIS DE, Roberto Santos, Renato Giacomini, MEDINA N. H., SEIXA, L. E., FINCO, S., PALOMO, F. R., ROMERO-MAESTRE, A., Marcilei Aparecida Guazzelli
Tipo de documento: Artigo
Título da fonte: Biblioteca Digital de Teses e Dissertações da FEI
Texto Completo: https://repositorio.fei.edu.br/handle/FEI/3477
Resumo: The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from.
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spelling Creative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY-NC-ND 4.0). Fonte: https://www.sciencedirect.com/science/article/pii/S0026271420308878?via%3Dihub#!. Acesso em: 25 nov. 2021.info:eu-repo/semantics/openAccessVILAS BOAS, ALEXIS C.MELO, MARCO ANTONIO ASSIS DERoberto SantosRenato GiacominiMEDINA N. H.SEIXA, L. E.FINCO, S.PALOMO, F. R.ROMERO-MAESTRE, A.Marcilei Aparecida Guazzellihttps://orcid.org/0000-0003-4395-8078https://orcid.org/0000-0001-7110-7241https://orcid.org/0000-0003-1060-26492021-11-25T21:34:57Z2021-11-25T21:34:57Z2021-01-05VILAS BOAS, A. C.; MELO, M. A. A. DE; SANTOS, R.B.B.; GIACOMINI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRE, A.; GUAZZELLI, M. A. Ionizing radiation hardness tests of GaN HEMTs for harsh environments. MICROELECTRONICS RELIABILITY, v. 116, p. 114000, 2021.0026-2714https://repositorio.fei.edu.br/handle/FEI/347710.1016/j.microrel.2020.114000The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from.116114000MICROELECTRONICS RELIABILITYTIDRadiation effectsGaNHEMTIonizing radiation hardness tests of GaN HEMTs for harsh environmentsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlereponame:Biblioteca Digital de Teses e Dissertações da FEIinstname:Centro Universitário da Fundação Educacional Inaciana (FEI)instacron:FEIhttps://www.sciencedirect.com/science/article/pii/S0026271420308878?via%3Dihub#!ORIGINALGiacomini_pdfGiacomini_pdfapplication/pdf2807053https://repositorio.fei.edu.br/bitstream/FEI/3477/1/Giacomini_pdf1d8abbd1cf6f499a1f65ad8c76f44e18MD51TEXTGiacomini_pdf.txtGiacomini_pdf.txtExtracted texttext/plain40893https://repositorio.fei.edu.br/bitstream/FEI/3477/2/Giacomini_pdf.txt2a5c63eff25e32e2d1a9e26d37d20658MD52THUMBNAILGiacomini_pdf.jpgGiacomini_pdf.jpgGenerated Thumbnailimage/jpeg1721https://repositorio.fei.edu.br/bitstream/FEI/3477/3/Giacomini_pdf.jpg34f84f30eae0452e14352723a74fa39bMD53FEI/34772021-11-26 04:00:29.989Biblioteca Digital de Teses e Dissertaçõeshttp://sofia.fei.edu.br/pergamum/biblioteca/PRI
dc.title.pt_BR.fl_str_mv Ionizing radiation hardness tests of GaN HEMTs for harsh environments
title Ionizing radiation hardness tests of GaN HEMTs for harsh environments
spellingShingle Ionizing radiation hardness tests of GaN HEMTs for harsh environments
VILAS BOAS, ALEXIS C.
TID
Radiation effects
GaN
HEMT
title_short Ionizing radiation hardness tests of GaN HEMTs for harsh environments
title_full Ionizing radiation hardness tests of GaN HEMTs for harsh environments
title_fullStr Ionizing radiation hardness tests of GaN HEMTs for harsh environments
title_full_unstemmed Ionizing radiation hardness tests of GaN HEMTs for harsh environments
title_sort Ionizing radiation hardness tests of GaN HEMTs for harsh environments
author VILAS BOAS, ALEXIS C.
author_facet VILAS BOAS, ALEXIS C.
MELO, MARCO ANTONIO ASSIS DE
Roberto Santos
Renato Giacomini
MEDINA N. H.
SEIXA, L. E.
FINCO, S.
PALOMO, F. R.
ROMERO-MAESTRE, A.
Marcilei Aparecida Guazzelli
author_role author
author2 MELO, MARCO ANTONIO ASSIS DE
Roberto Santos
Renato Giacomini
MEDINA N. H.
SEIXA, L. E.
FINCO, S.
PALOMO, F. R.
ROMERO-MAESTRE, A.
Marcilei Aparecida Guazzelli
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.authorOrcid.none.fl_str_mv https://orcid.org/0000-0003-4395-8078
https://orcid.org/0000-0001-7110-7241
https://orcid.org/0000-0003-1060-2649
dc.contributor.author.fl_str_mv VILAS BOAS, ALEXIS C.
MELO, MARCO ANTONIO ASSIS DE
Roberto Santos
Renato Giacomini
MEDINA N. H.
SEIXA, L. E.
FINCO, S.
PALOMO, F. R.
ROMERO-MAESTRE, A.
Marcilei Aparecida Guazzelli
dc.subject.por.fl_str_mv TID
Radiation effects
GaN
HEMT
topic TID
Radiation effects
GaN
HEMT
description The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from.
publishDate 2021
dc.date.accessioned.fl_str_mv 2021-11-25T21:34:57Z
dc.date.available.fl_str_mv 2021-11-25T21:34:57Z
dc.date.issued.fl_str_mv 2021-01-05
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
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dc.identifier.citation.fl_str_mv VILAS BOAS, A. C.; MELO, M. A. A. DE; SANTOS, R.B.B.; GIACOMINI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRE, A.; GUAZZELLI, M. A. Ionizing radiation hardness tests of GaN HEMTs for harsh environments. MICROELECTRONICS RELIABILITY, v. 116, p. 114000, 2021.
dc.identifier.uri.fl_str_mv https://repositorio.fei.edu.br/handle/FEI/3477
dc.identifier.issn.none.fl_str_mv 0026-2714
dc.identifier.doi.none.fl_str_mv 10.1016/j.microrel.2020.114000
identifier_str_mv VILAS BOAS, A. C.; MELO, M. A. A. DE; SANTOS, R.B.B.; GIACOMINI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRE, A.; GUAZZELLI, M. A. Ionizing radiation hardness tests of GaN HEMTs for harsh environments. MICROELECTRONICS RELIABILITY, v. 116, p. 114000, 2021.
0026-2714
10.1016/j.microrel.2020.114000
url https://repositorio.fei.edu.br/handle/FEI/3477
dc.relation.ispartof.none.fl_str_mv MICROELECTRONICS RELIABILITY
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