Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers

Detalhes bibliográficos
Autor(a) principal: Junior, Braz Baptista [UNESP]
Data de Publicação: 2022
Outros Autores: De Andrade, Maria Gloria Cano [UNESP], De Oliveira Bergamim, Luis Felipe [UNESP], Nogueira, Carlos Roberto [UNESP], Abud, Renan Baptista [UNESP], Simoen, Eddy
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/LAEDC54796.2022.9908239
http://hdl.handle.net/11449/249337
Resumo: In this paper, the temperature dependence of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrates is studied experimentally. Drain current (ID), transconductance (gm), threshold voltage (VT) and drain-induced barrier lowering (DIBL) were analyzed in the temperature range from -35°C to 200°C. In addition, gate current (IG) and subthreshold slope (SS) were also analyzed in order to understand the physical mechanisms involved. The results indicate that gate current increases with increasing temperature. Also, as the gate current (IG) increases, the drain current (ID) decreases. The characteristics of AlGaN/GaN HEMTs on silicon substrates indicate that they may be a promising candidate for analog and radio frequency (RF) applications.
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spelling Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafersAlGaN/GaNgate leakageHEMTHigh-temperatureIn this paper, the temperature dependence of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrates is studied experimentally. Drain current (ID), transconductance (gm), threshold voltage (VT) and drain-induced barrier lowering (DIBL) were analyzed in the temperature range from -35°C to 200°C. In addition, gate current (IG) and subthreshold slope (SS) were also analyzed in order to understand the physical mechanisms involved. The results indicate that gate current increases with increasing temperature. Also, as the gate current (IG) increases, the drain current (ID) decreases. The characteristics of AlGaN/GaN HEMTs on silicon substrates indicate that they may be a promising candidate for analog and radio frequency (RF) applications.São Paulo State University (UNESP) Institute of Science and Technology, SPGhent University Ghent Belgium Also ImecSão Paulo State University (UNESP) Institute of Science and Technology, SPUniversidade Estadual Paulista (UNESP)Belgium Also ImecJunior, Braz Baptista [UNESP]De Andrade, Maria Gloria Cano [UNESP]De Oliveira Bergamim, Luis Felipe [UNESP]Nogueira, Carlos Roberto [UNESP]Abud, Renan Baptista [UNESP]Simoen, Eddy2023-07-29T15:13:19Z2023-07-29T15:13:19Z2022-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/LAEDC54796.2022.99082392022 IEEE Latin America Electron Devices Conference, LAEDC 2022.http://hdl.handle.net/11449/24933710.1109/LAEDC54796.2022.99082392-s2.0-85141344803Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2022 IEEE Latin America Electron Devices Conference, LAEDC 2022info:eu-repo/semantics/openAccess2023-07-29T15:13:19Zoai:repositorio.unesp.br:11449/249337Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462023-07-29T15:13:19Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers
title Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers
spellingShingle Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers
Junior, Braz Baptista [UNESP]
AlGaN/GaN
gate leakage
HEMT
High-temperature
title_short Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers
title_full Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers
title_fullStr Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers
title_full_unstemmed Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers
title_sort Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers
author Junior, Braz Baptista [UNESP]
author_facet Junior, Braz Baptista [UNESP]
De Andrade, Maria Gloria Cano [UNESP]
De Oliveira Bergamim, Luis Felipe [UNESP]
Nogueira, Carlos Roberto [UNESP]
Abud, Renan Baptista [UNESP]
Simoen, Eddy
author_role author
author2 De Andrade, Maria Gloria Cano [UNESP]
De Oliveira Bergamim, Luis Felipe [UNESP]
Nogueira, Carlos Roberto [UNESP]
Abud, Renan Baptista [UNESP]
Simoen, Eddy
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (UNESP)
Belgium Also Imec
dc.contributor.author.fl_str_mv Junior, Braz Baptista [UNESP]
De Andrade, Maria Gloria Cano [UNESP]
De Oliveira Bergamim, Luis Felipe [UNESP]
Nogueira, Carlos Roberto [UNESP]
Abud, Renan Baptista [UNESP]
Simoen, Eddy
dc.subject.por.fl_str_mv AlGaN/GaN
gate leakage
HEMT
High-temperature
topic AlGaN/GaN
gate leakage
HEMT
High-temperature
description In this paper, the temperature dependence of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrates is studied experimentally. Drain current (ID), transconductance (gm), threshold voltage (VT) and drain-induced barrier lowering (DIBL) were analyzed in the temperature range from -35°C to 200°C. In addition, gate current (IG) and subthreshold slope (SS) were also analyzed in order to understand the physical mechanisms involved. The results indicate that gate current increases with increasing temperature. Also, as the gate current (IG) increases, the drain current (ID) decreases. The characteristics of AlGaN/GaN HEMTs on silicon substrates indicate that they may be a promising candidate for analog and radio frequency (RF) applications.
publishDate 2022
dc.date.none.fl_str_mv 2022-01-01
2023-07-29T15:13:19Z
2023-07-29T15:13:19Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/LAEDC54796.2022.9908239
2022 IEEE Latin America Electron Devices Conference, LAEDC 2022.
http://hdl.handle.net/11449/249337
10.1109/LAEDC54796.2022.9908239
2-s2.0-85141344803
url http://dx.doi.org/10.1109/LAEDC54796.2022.9908239
http://hdl.handle.net/11449/249337
identifier_str_mv 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022.
10.1109/LAEDC54796.2022.9908239
2-s2.0-85141344803
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1799964577122746368

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