Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs
Autor(a) principal: | |
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Data de Publicação: | 2019 |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Holos |
Texto Completo: | http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/8192 |
Resumo: | AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC on the performances of AlGaN/GaN double quantum well HEMTs (DQW-HEMTs) are analyzed and investigated. The results show that the devices with 4H-SiC and 6H-SiC substrates exhibit a higher transconductance of about 192 ms/mm at VDS = 15 V and a lower minimum noise figure (NFmin) of 0.48 and 0.42 dB at 10 GHz than those of devices with 3C-SiC, respectively. Whereas, DC-HEMT with 3C-SiC substrate has a transconductance of about 180 ms/mm at VDS = 15 V and a minimum noise figure of 3.01 dB at 10 GHz. On the other hands, the DC-HEMT with 3C-SiC substrate has lower drain gate capacitance (Cdg) and higher cut-off frequency (ft) than DC-HEMT with 4H-SiC and 6H-SiC substrates. The results demonstrate that AlGaN/GaN DH-HEMTs 4H-SiC and 6H-SiC substrates are promising devices for future high-power and high-frequency electron device applications. |
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Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTsSilicon carbide polymorphss6H-SiC3C-SiC4H-SiCAlGaN/GaNMinimum noise figure (NFmin)Double quantum wellHigh electron mobility transistors (HEMTs).AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC on the performances of AlGaN/GaN double quantum well HEMTs (DQW-HEMTs) are analyzed and investigated. The results show that the devices with 4H-SiC and 6H-SiC substrates exhibit a higher transconductance of about 192 ms/mm at VDS = 15 V and a lower minimum noise figure (NFmin) of 0.48 and 0.42 dB at 10 GHz than those of devices with 3C-SiC, respectively. Whereas, DC-HEMT with 3C-SiC substrate has a transconductance of about 180 ms/mm at VDS = 15 V and a minimum noise figure of 3.01 dB at 10 GHz. On the other hands, the DC-HEMT with 3C-SiC substrate has lower drain gate capacitance (Cdg) and higher cut-off frequency (ft) than DC-HEMT with 4H-SiC and 6H-SiC substrates. The results demonstrate that AlGaN/GaN DH-HEMTs 4H-SiC and 6H-SiC substrates are promising devices for future high-power and high-frequency electron device applications.Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte2019-12-23info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/819210.15628/holos.2019.8192HOLOS; v. 2 (2019); 1-141807-1600reponame:Holosinstname:Instituto Federal do Rio Grande do Norte (IFRN)instacron:IFRNenghttp://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/8192/pdfCopyright (c) 2019 HOLOSinfo:eu-repo/semantics/openAccessSabaghi, Masoud2022-05-01T19:27:36Zoai:holos.ifrn.edu.br:article/8192Revistahttp://www2.ifrn.edu.br/ojs/index.php/HOLOSPUBhttp://www2.ifrn.edu.br/ojs/index.php/HOLOS/oaiholos@ifrn.edu.br||jyp.leite@ifrn.edu.br||propi@ifrn.edu.br1807-16001518-1634opendoar:2022-05-01T19:27:36Holos - Instituto Federal do Rio Grande do Norte (IFRN)false |
dc.title.none.fl_str_mv |
Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs |
title |
Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs |
spellingShingle |
Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs Sabaghi, Masoud Silicon carbide polymorphss 6H-SiC 3C-SiC 4H-SiC AlGaN/GaN Minimum noise figure (NFmin) Double quantum well High electron mobility transistors (HEMTs). |
title_short |
Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs |
title_full |
Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs |
title_fullStr |
Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs |
title_full_unstemmed |
Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs |
title_sort |
Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs |
author |
Sabaghi, Masoud |
author_facet |
Sabaghi, Masoud |
author_role |
author |
dc.contributor.author.fl_str_mv |
Sabaghi, Masoud |
dc.subject.por.fl_str_mv |
Silicon carbide polymorphss 6H-SiC 3C-SiC 4H-SiC AlGaN/GaN Minimum noise figure (NFmin) Double quantum well High electron mobility transistors (HEMTs). |
topic |
Silicon carbide polymorphss 6H-SiC 3C-SiC 4H-SiC AlGaN/GaN Minimum noise figure (NFmin) Double quantum well High electron mobility transistors (HEMTs). |
description |
AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC on the performances of AlGaN/GaN double quantum well HEMTs (DQW-HEMTs) are analyzed and investigated. The results show that the devices with 4H-SiC and 6H-SiC substrates exhibit a higher transconductance of about 192 ms/mm at VDS = 15 V and a lower minimum noise figure (NFmin) of 0.48 and 0.42 dB at 10 GHz than those of devices with 3C-SiC, respectively. Whereas, DC-HEMT with 3C-SiC substrate has a transconductance of about 180 ms/mm at VDS = 15 V and a minimum noise figure of 3.01 dB at 10 GHz. On the other hands, the DC-HEMT with 3C-SiC substrate has lower drain gate capacitance (Cdg) and higher cut-off frequency (ft) than DC-HEMT with 4H-SiC and 6H-SiC substrates. The results demonstrate that AlGaN/GaN DH-HEMTs 4H-SiC and 6H-SiC substrates are promising devices for future high-power and high-frequency electron device applications. |
publishDate |
2019 |
dc.date.none.fl_str_mv |
2019-12-23 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/8192 10.15628/holos.2019.8192 |
url |
http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/8192 |
identifier_str_mv |
10.15628/holos.2019.8192 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/8192/pdf |
dc.rights.driver.fl_str_mv |
Copyright (c) 2019 HOLOS info:eu-repo/semantics/openAccess |
rights_invalid_str_mv |
Copyright (c) 2019 HOLOS |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte |
publisher.none.fl_str_mv |
Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte |
dc.source.none.fl_str_mv |
HOLOS; v. 2 (2019); 1-14 1807-1600 reponame:Holos instname:Instituto Federal do Rio Grande do Norte (IFRN) instacron:IFRN |
instname_str |
Instituto Federal do Rio Grande do Norte (IFRN) |
instacron_str |
IFRN |
institution |
IFRN |
reponame_str |
Holos |
collection |
Holos |
repository.name.fl_str_mv |
Holos - Instituto Federal do Rio Grande do Norte (IFRN) |
repository.mail.fl_str_mv |
holos@ifrn.edu.br||jyp.leite@ifrn.edu.br||propi@ifrn.edu.br |
_version_ |
1798951624649998336 |