Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films

Detalhes bibliográficos
Autor(a) principal: NARDES, A.M.
Data de Publicação: 2014
Outros Autores: ANDRADE, A.M., FONSECA, F.J., DIRANI, E.A.T., MUCCILLO, R., MUCCILLO, E.N.S., INTERNATIONAL CONFERENCE ON MATERIALS FOR MICROELECTRONICS AND NANOENGINEERING, 4th
Tipo de documento: Artigo de conferência
Título da fonte: Repositório Institucional do IPEN
Texto Completo: http://repositorio.ipen.br/handle/123456789/15380
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spelling 2014-11-17T17:55:16Z2014-11-18T19:03:53Z2015-04-01T20:55:05Z2014-11-17T17:55:16Z2014-11-18T19:03:53Z2015-04-01T20:55:05ZJune 10-12, 2002http://repositorio.ipen.br/handle/123456789/15380Made available in DSpace on 2014-11-17T17:55:16Z (GMT). No. of bitstreams: 0Made available in DSpace on 2014-11-18T19:03:53Z (GMT). No. of bitstreams: 0Made available in DSpace on 2015-04-01T20:55:05Z (GMT). No. of bitstreams: 0407-411openAccessinfo:eu-repo/semantics/openAccessPublicado em: Journal of Materials Science: Materials in Electronics, , v. 14, n. 5/7, p. 407-411, 2003reponame:Repositório Institucional do IPENinstname:Instituto de Pesquisas Energéticas e Nucleares (IPEN)instacron:IPENsiliconthin filmschemical vapor depositionplasmatemperature range 0273-0400 ktemperature range 0400-1000 kelectric conductivitystructural chemical analysishall effectimpedancespectroscopyLow-temperature PECVD deposition of highly conductive microcrystalline silicon thin filmsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjectIEspoo, FinlandNARDES, A.M.ANDRADE, A.M.FONSECA, F.J.DIRANI, E.A.T.MUCCILLO, R.MUCCILLO, E.N.S.INTERNATIONAL CONFERENCE ON MATERIALS FOR MICROELECTRONICS AND NANOENGINEERING, 4th097692002MUCCILLO, R.MUCCILLO, E.N.S.04-08Proceedings-12982-1-111651298NARDES, A.M.:-1:-1:SANDRADE, A.M.:2982:-1:NFONSECA, F.J.:-1:-1:NDIRANI, E.A.T.:-1:-1:NMUCCILLO, R.:1165:34:NMUCCILLO, E.N.S.:1298:34:NORIGINAL09769.pdf09769.pdfapplication/pdf468130http://repositorio.ipen.br/bitstream/123456789/15380/1/09769.pdf18849f24ce66e99eb96dc5ce5b4a7332MD51123456789/153802020-07-06 23:48:30.434oai:repositorio.ipen.br:123456789/15380Repositório InstitucionalPUBhttp://repositorio.ipen.br/oai/requestbibl@ipen.bropendoar:45102020-07-06T23:48:30Repositório Institucional do IPEN - Instituto de Pesquisas Energéticas e Nucleares (IPEN)false
dc.title.pt_BR.fl_str_mv Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films
title Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films
spellingShingle Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films
NARDES, A.M.
silicon
thin films
chemical vapor deposition
plasma
temperature range 0273-0400 k
temperature range 0400-1000 k
electric conductivity
structural chemical analysis
hall effect
impedance
spectroscopy
title_short Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films
title_full Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films
title_fullStr Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films
title_full_unstemmed Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films
title_sort Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films
author NARDES, A.M.
author_facet NARDES, A.M.
ANDRADE, A.M.
FONSECA, F.J.
DIRANI, E.A.T.
MUCCILLO, R.
MUCCILLO, E.N.S.
INTERNATIONAL CONFERENCE ON MATERIALS FOR MICROELECTRONICS AND NANOENGINEERING, 4th
author_role author
author2 ANDRADE, A.M.
FONSECA, F.J.
DIRANI, E.A.T.
MUCCILLO, R.
MUCCILLO, E.N.S.
INTERNATIONAL CONFERENCE ON MATERIALS FOR MICROELECTRONICS AND NANOENGINEERING, 4th
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv NARDES, A.M.
ANDRADE, A.M.
FONSECA, F.J.
DIRANI, E.A.T.
MUCCILLO, R.
MUCCILLO, E.N.S.
INTERNATIONAL CONFERENCE ON MATERIALS FOR MICROELECTRONICS AND NANOENGINEERING, 4th
dc.subject.por.fl_str_mv silicon
thin films
chemical vapor deposition
plasma
temperature range 0273-0400 k
temperature range 0400-1000 k
electric conductivity
structural chemical analysis
hall effect
impedance
spectroscopy
topic silicon
thin films
chemical vapor deposition
plasma
temperature range 0273-0400 k
temperature range 0400-1000 k
electric conductivity
structural chemical analysis
hall effect
impedance
spectroscopy
publishDate 2014
dc.date.evento.pt_BR.fl_str_mv June 10-12, 2002
dc.date.accessioned.fl_str_mv 2014-11-17T17:55:16Z
2014-11-18T19:03:53Z
2015-04-01T20:55:05Z
dc.date.available.fl_str_mv 2014-11-17T17:55:16Z
2014-11-18T19:03:53Z
2015-04-01T20:55:05Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://repositorio.ipen.br/handle/123456789/15380
url http://repositorio.ipen.br/handle/123456789/15380
dc.rights.driver.fl_str_mv openAccess
info:eu-repo/semantics/openAccess
rights_invalid_str_mv openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 407-411
dc.coverage.pt_BR.fl_str_mv I
dc.source.pt_BR.fl_str_mv Publicado em: Journal of Materials Science: Materials in Electronics, , v. 14, n. 5/7, p. 407-411, 2003
dc.source.none.fl_str_mv reponame:Repositório Institucional do IPEN
instname:Instituto de Pesquisas Energéticas e Nucleares (IPEN)
instacron:IPEN
instname_str Instituto de Pesquisas Energéticas e Nucleares (IPEN)
instacron_str IPEN
institution IPEN
reponame_str Repositório Institucional do IPEN
collection Repositório Institucional do IPEN
bitstream.url.fl_str_mv http://repositorio.ipen.br/bitstream/123456789/15380/1/09769.pdf
bitstream.checksum.fl_str_mv 18849f24ce66e99eb96dc5ce5b4a7332
bitstream.checksumAlgorithm.fl_str_mv MD5
repository.name.fl_str_mv Repositório Institucional do IPEN - Instituto de Pesquisas Energéticas e Nucleares (IPEN)
repository.mail.fl_str_mv bibl@ipen.br
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