Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination

Detalhes bibliográficos
Autor(a) principal: Peres, Marco
Data de Publicação: 2011
Outros Autores: Magalhães, Sérgio, Fellmann, Vincent, Daudin, Bruno, Neves, Armando José, Alves, Eduardo, Lorenz, Katharina, Monteiro, Teresa
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10773/9585
Resumo: Undoped self-assembled GaN quantum dots (QD) stacked in superlattices (SL) with AlN spacer layers were submitted to thermal annealing treatments. Changes in the balance between the quantum confinement, strain state of the stacked heterostructures and quantum confined Stark effect lead to the observation of GaN QD excitonic recombination above and below the bulk GaN bandgap. In Eu-implanted SL structures, the GaN QD recombination was found to be dependent on the implantation fluence. For samples implanted with high fluence, a broad emission band at 2.7 eV was tentatively assigned to the emission of large blurred GaN QD present in the damage region of the implanted SL. This emission band is absent in the SL structures implanted with lower fluence and hence lower defect level. In both cases, high energy emission bands at approx. 3.9 eV suggest the presence of smaller dots for which the photoluminescence intensity was seen to be constant with increasing temperatures. Despite the fact that different deexcitation processes occur in undoped and Eu-implanted SL structures, the excitation population mechanisms were seen to be sample-independent. Two main absorption bands with maxima at approx. 4.1 and 4.7 to 4.9 eV are responsible for the population of the optically active centres in the SL samples.
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spelling Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombinationGaN quantum dotsPLPLEUndoped self-assembled GaN quantum dots (QD) stacked in superlattices (SL) with AlN spacer layers were submitted to thermal annealing treatments. Changes in the balance between the quantum confinement, strain state of the stacked heterostructures and quantum confined Stark effect lead to the observation of GaN QD excitonic recombination above and below the bulk GaN bandgap. In Eu-implanted SL structures, the GaN QD recombination was found to be dependent on the implantation fluence. For samples implanted with high fluence, a broad emission band at 2.7 eV was tentatively assigned to the emission of large blurred GaN QD present in the damage region of the implanted SL. This emission band is absent in the SL structures implanted with lower fluence and hence lower defect level. In both cases, high energy emission bands at approx. 3.9 eV suggest the presence of smaller dots for which the photoluminescence intensity was seen to be constant with increasing temperatures. Despite the fact that different deexcitation processes occur in undoped and Eu-implanted SL structures, the excitation population mechanisms were seen to be sample-independent. Two main absorption bands with maxima at approx. 4.1 and 4.7 to 4.9 eV are responsible for the population of the optically active centres in the SL samples.SpringerOpen2013-01-24T12:46:44Z2011-01-01T00:00:00Z2011info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/9585eng1931-757310.1186/1556-276X-6-378Peres, MarcoMagalhães, SérgioFellmann, VincentDaudin, BrunoNeves, Armando JoséAlves, EduardoLorenz, KatharinaMonteiro, Teresainfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:16:07Zoai:ria.ua.pt:10773/9585Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T02:46:16.630466Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
title Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
spellingShingle Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
Peres, Marco
GaN quantum dots
PL
PLE
title_short Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
title_full Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
title_fullStr Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
title_full_unstemmed Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
title_sort Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
author Peres, Marco
author_facet Peres, Marco
Magalhães, Sérgio
Fellmann, Vincent
Daudin, Bruno
Neves, Armando José
Alves, Eduardo
Lorenz, Katharina
Monteiro, Teresa
author_role author
author2 Magalhães, Sérgio
Fellmann, Vincent
Daudin, Bruno
Neves, Armando José
Alves, Eduardo
Lorenz, Katharina
Monteiro, Teresa
author2_role author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Peres, Marco
Magalhães, Sérgio
Fellmann, Vincent
Daudin, Bruno
Neves, Armando José
Alves, Eduardo
Lorenz, Katharina
Monteiro, Teresa
dc.subject.por.fl_str_mv GaN quantum dots
PL
PLE
topic GaN quantum dots
PL
PLE
description Undoped self-assembled GaN quantum dots (QD) stacked in superlattices (SL) with AlN spacer layers were submitted to thermal annealing treatments. Changes in the balance between the quantum confinement, strain state of the stacked heterostructures and quantum confined Stark effect lead to the observation of GaN QD excitonic recombination above and below the bulk GaN bandgap. In Eu-implanted SL structures, the GaN QD recombination was found to be dependent on the implantation fluence. For samples implanted with high fluence, a broad emission band at 2.7 eV was tentatively assigned to the emission of large blurred GaN QD present in the damage region of the implanted SL. This emission band is absent in the SL structures implanted with lower fluence and hence lower defect level. In both cases, high energy emission bands at approx. 3.9 eV suggest the presence of smaller dots for which the photoluminescence intensity was seen to be constant with increasing temperatures. Despite the fact that different deexcitation processes occur in undoped and Eu-implanted SL structures, the excitation population mechanisms were seen to be sample-independent. Two main absorption bands with maxima at approx. 4.1 and 4.7 to 4.9 eV are responsible for the population of the optically active centres in the SL samples.
publishDate 2011
dc.date.none.fl_str_mv 2011-01-01T00:00:00Z
2011
2013-01-24T12:46:44Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10773/9585
url http://hdl.handle.net/10773/9585
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dc.relation.none.fl_str_mv 1931-7573
10.1186/1556-276X-6-378
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dc.publisher.none.fl_str_mv SpringerOpen
publisher.none.fl_str_mv SpringerOpen
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