The impact of long-term memory effects on the linearizability of AlGaN/GaN HEMT-based power amplifiers

• Autor(a) principal: Gomes, João Lucas Lessa
• Data de Publicação: 2022
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/10773/36289
• topic: Amplifier; Deep-level traps; GaN; GaN HEMT; Linearizability; Modeling

AlGaN/GaN High Electron Mobility Transistor (HEMT)s are among the preferred options for radio-frequency power amplification in cellular base station transmitters and radar applications. However, despite their promising outlook, the pervasiveness of trapping effects makes them resilient to conventional digital predistortion schemes, which not only decrease their current range of applications but could also preclude their integration in future small cells and multiple-input multiple-output architectures where simpler predistortion schemes are mandatory. So, this PhD thesis aims at developing a meaningful link between the device physics and the linearizability of the AlGaN/GaN HEMT-based Power Amplifier (PA). In order to bridge this gap, this thesis begins with a clear explanation for the mechanisms governing the dominant source of trapping effects in standard AlGaN/GaN HEMTs, namely buffer traps. Based on this knowledge, we explain why the best known physically-supported trapping models, used to represent these devices, are insufficient and present a possible improvement to what we consider to be the most accurate model, supported by Technology Computer-Aided Design (TCAD) simulations. This has also been corroborated through a novel double-pulse technique able to describe experimentally both the capture and emission transients in a wide temporal span under guaranteed isothermal conditions. The measured stretched capture transients validated our understanding of the process while the temperature dependence of the emission profiles confirmed buffer traps as the dominant source of trapping effects. Finally, through both simulations and experimental results, we elaborate here the relationship between the emission time constant and the achievable linearity of GaN HEMT-based PAs, showing that the worst-case scenario happens when the emission time constant is on the order of the time between consecutive envelope peaks above a certain amplitude threshold. This is the case in which we observed a more pronounced hysteresis on the gain and phase-shift characteristics, and so, a stronger impact of the memory effects. The main outcome of this thesis suggests that the biggest linearizability concern in standard AlGaN/GaN HEMT-based PAs lies on the large emission time constants of buffer traps.