2D electronics based on graphene field effect transistors: tutorial for modelling and simulation

• Autor(a) principal: Jmai, Bassem
• Data de Publicação: 2021
• Outros Autores: Silva, Vitor, Mendes, P. M.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/1822/74476
• topic: Graphene field-effect transistors (GFETs); MATLAB; Verilog; VHDL-AMS; Modeling; Science & Technology

This paper provides modeling and simulation insights into field-effect transistors based on graphene (GFET), focusing on the devices’ architecture with regards to the position of the gate (top-gated graphene transistors, back-gated graphene transistors, and top-/back-gated graphene transistors), substrate (silicon, silicon carbide, and quartz/glass), and the graphene growth (CVD, CVD on SiC, and mechanical exfoliation). These aspects are explored and discussed in order to facilitate the selection of the appropriate topology for system-level design, based on the most common topologies. Since most of the GFET models reported in the literature are complex and hard to understand, a model of a GFET was implemented and made available in MATLAB, Verilog in Cadence, and VHDL-AMS in Simplorer—useful tools for circuit designers with different backgrounds. A tutorial is presented, enabling the researchers to easily implement the model to predict the performance of their devices. In short, this paper aims to provide the initial knowledge and tools for researchers willing to use GFETs in their designs at the system level, who are looking to implement an initial setup that allows the inclusion of the performance of GFETs.