Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress

Detalhes bibliográficos
Autor(a) principal: Kiazadeh, Asal
Data de Publicação: 2015
Outros Autores: Salgueiro, Daniela, Branquinho, Rita, Pinto, Joana, Gomes, Henrique L., Barquinha, Pedro, Martins, Rodrigo, Fortunato, Elvira
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10362/23023
Resumo: This work is funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT-Portuguese Foundation for Science and Technology under the Project Nos. UID/CTM/50025/2013 and EXCL/CTM-NAN/0201/2012 and the European Communities 7th Framework Programme under grant agreement ICT-2013-10-611070 (i-FLEXIS project).
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spelling Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stressMaterials SciencePhysicsNanoscience & NanotechnologyThis work is funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT-Portuguese Foundation for Science and Technology under the Project Nos. UID/CTM/50025/2013 and EXCL/CTM-NAN/0201/2012 and the European Communities 7th Framework Programme under grant agreement ICT-2013-10-611070 (i-FLEXIS project).In this study, we report solution-processed amorphous zinc tin oxide transistors exhibiting high operational stability under positive gate bias stress, translated by a recoverable threshold voltage shift of about 20% of total applied stress voltage. Under vacuum condition, the threshold voltage shift saturates showing that the gate-bias stress is limited by trap exhaustion or balance between trap filling and emptying mechanism. In ambient atmosphere, the threshold voltage shift no longer saturates, stability is degraded and the recovering process is impeded. We suggest that the trapping time during the stress and detrapping time in recovering are affected by oxygen adsorption/desorption processes. The time constants extracted from stretched exponential fitting curves are ≈106 s and 105 s in vacuum and air, respectively.UNINOVA-Instituto de Desenvolvimento de Novas TecnologiasCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)DCM - Departamento de Ciência dos MateriaisRUNKiazadeh, AsalSalgueiro, DanielaBranquinho, RitaPinto, JoanaGomes, Henrique L.Barquinha, PedroMartins, RodrigoFortunato, Elvira2017-09-01T22:05:08Z2015-062015-06-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article1application/pdfhttp://hdl.handle.net/10362/23023eng978087421PURE: 2811902https://doi.org/10.1063/1.4919057info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:11:02Zoai:run.unl.pt:10362/23023Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:27:37.034152Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
title Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
spellingShingle Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
Kiazadeh, Asal
Materials Science
Physics
Nanoscience & Nanotechnology
title_short Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
title_full Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
title_fullStr Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
title_full_unstemmed Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
title_sort Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
author Kiazadeh, Asal
author_facet Kiazadeh, Asal
Salgueiro, Daniela
Branquinho, Rita
Pinto, Joana
Gomes, Henrique L.
Barquinha, Pedro
Martins, Rodrigo
Fortunato, Elvira
author_role author
author2 Salgueiro, Daniela
Branquinho, Rita
Pinto, Joana
Gomes, Henrique L.
Barquinha, Pedro
Martins, Rodrigo
Fortunato, Elvira
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
DCM - Departamento de Ciência dos Materiais
RUN
dc.contributor.author.fl_str_mv Kiazadeh, Asal
Salgueiro, Daniela
Branquinho, Rita
Pinto, Joana
Gomes, Henrique L.
Barquinha, Pedro
Martins, Rodrigo
Fortunato, Elvira
dc.subject.por.fl_str_mv Materials Science
Physics
Nanoscience & Nanotechnology
topic Materials Science
Physics
Nanoscience & Nanotechnology
description This work is funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT-Portuguese Foundation for Science and Technology under the Project Nos. UID/CTM/50025/2013 and EXCL/CTM-NAN/0201/2012 and the European Communities 7th Framework Programme under grant agreement ICT-2013-10-611070 (i-FLEXIS project).
publishDate 2015
dc.date.none.fl_str_mv 2015-06
2015-06-01T00:00:00Z
2017-09-01T22:05:08Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/23023
url http://hdl.handle.net/10362/23023
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 978087421
PURE: 2811902
https://doi.org/10.1063/1.4919057
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 1
application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
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