Photothermoelectric AZO/SiO2/NiO Device

Detalhes bibliográficos
Autor(a) principal: Bianchi, Catarina
Data de Publicação: 2023
Outros Autores: Marques, Ana, Ferreira, Isabel
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10362/154925
Resumo: This work was mainly funded by ERC‐CoG‐2014, and partially funded by FCT – Fundação para a Ciência e a Tecnologia, I.P., in the scope of the Project Nos. LA/P/0037/2020 of the Associate Laboratory Institute of Nanostructures, Nanomodelling and Nanofabrication – i3N. Publisher Copyright: © 2023 The Authors. Advanced Materials Technologies published by Wiley-VCH GmbH.
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spelling Photothermoelectric AZO/SiO2/NiO Deviceinfrared absorptionphotothermoelectricstransparent devicesMaterials Science(all)Mechanics of MaterialsIndustrial and Manufacturing EngineeringThis work was mainly funded by ERC‐CoG‐2014, and partially funded by FCT – Fundação para a Ciência e a Tecnologia, I.P., in the scope of the Project Nos. LA/P/0037/2020 of the Associate Laboratory Institute of Nanostructures, Nanomodelling and Nanofabrication – i3N. Publisher Copyright: © 2023 The Authors. Advanced Materials Technologies published by Wiley-VCH GmbH.Transparent-conductive-oxide (TCO) materials and transparent devices combining photovoltage and thermoelectric effects are still scarce. Hence, a new transparent-conductive-oxide/insulating/transparent-semiconductor-oxide (TCO-I-TSO) structure combining such effects is developed. It is made of aluminum-doped zinc oxide (AZO)/SiO2/NiO thin films sequentially deposited on glass substrates. AZO exhibits thermo and photovoltage in response to gradient temperature and absorption of UV photons, while NIR photons absorption in the NiO layer. Photovoltage appears in the plane between the AZO and NiO layer when the whole sample is irradiated with near infrared light, and it also depends on the thickness of the SiO2 layer. This photovoltage is continuously monitored on samples placed in a glass window facing south. Throughout the day, the photovoltage varies from 0 to 300 µV proportionally to the light intensity.DCM - Departamento de Ciência dos MateriaisCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)RUNBianchi, CatarinaMarques, AnaFerreira, Isabel2023-07-06T22:15:48Z2023-08-112023-08-11T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article8application/pdfhttp://hdl.handle.net/10362/154925eng2365-709XPURE: 65370014https://doi.org/10.1002/admt.202300133info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T05:37:22Zoai:run.unl.pt:10362/154925Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:55:50.978523Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Photothermoelectric AZO/SiO2/NiO Device
title Photothermoelectric AZO/SiO2/NiO Device
spellingShingle Photothermoelectric AZO/SiO2/NiO Device
Bianchi, Catarina
infrared absorption
photothermoelectrics
transparent devices
Materials Science(all)
Mechanics of Materials
Industrial and Manufacturing Engineering
title_short Photothermoelectric AZO/SiO2/NiO Device
title_full Photothermoelectric AZO/SiO2/NiO Device
title_fullStr Photothermoelectric AZO/SiO2/NiO Device
title_full_unstemmed Photothermoelectric AZO/SiO2/NiO Device
title_sort Photothermoelectric AZO/SiO2/NiO Device
author Bianchi, Catarina
author_facet Bianchi, Catarina
Marques, Ana
Ferreira, Isabel
author_role author
author2 Marques, Ana
Ferreira, Isabel
author2_role author
author
dc.contributor.none.fl_str_mv DCM - Departamento de Ciência dos Materiais
CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
RUN
dc.contributor.author.fl_str_mv Bianchi, Catarina
Marques, Ana
Ferreira, Isabel
dc.subject.por.fl_str_mv infrared absorption
photothermoelectrics
transparent devices
Materials Science(all)
Mechanics of Materials
Industrial and Manufacturing Engineering
topic infrared absorption
photothermoelectrics
transparent devices
Materials Science(all)
Mechanics of Materials
Industrial and Manufacturing Engineering
description This work was mainly funded by ERC‐CoG‐2014, and partially funded by FCT – Fundação para a Ciência e a Tecnologia, I.P., in the scope of the Project Nos. LA/P/0037/2020 of the Associate Laboratory Institute of Nanostructures, Nanomodelling and Nanofabrication – i3N. Publisher Copyright: © 2023 The Authors. Advanced Materials Technologies published by Wiley-VCH GmbH.
publishDate 2023
dc.date.none.fl_str_mv 2023-07-06T22:15:48Z
2023-08-11
2023-08-11T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/154925
url http://hdl.handle.net/10362/154925
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2365-709X
PURE: 65370014
https://doi.org/10.1002/admt.202300133
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 8
application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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