Critical role of a double-layer configuration in solution-based unipolar resistive switching memories

Detalhes bibliográficos
Autor(a) principal: Carlos, Emanuel
Data de Publicação: 2018
Outros Autores: Kiazadeh, Asal, Deuermeier, Jonas, Branquinho, Rita, Martins, Rodrigo, Fortunato, Elvira
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: https://doi.org/10.1088/1361-6528/aac9fb
Resumo: SFRH/BPD/99136/2013. SFRH/BD/116047/2016. project FPA2016/EIT/EIT RawMaterials Grant Agreement 15015.
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spelling Critical role of a double-layer configuration in solution-based unipolar resistive switching memoriesaluminum oxide (AlO)resistive switching memorysolution combustion synthesistransparent deviceBioengineeringChemistry(all)Materials Science(all)Mechanics of MaterialsMechanical EngineeringElectrical and Electronic EngineeringSFRH/BPD/99136/2013. SFRH/BD/116047/2016. project FPA2016/EIT/EIT RawMaterials Grant Agreement 15015.Lately, resistive switching memories (ReRAM) have been attracting a lot of attention due to their possibilities of fast operation, lower power consumption and simple fabrication process and they can also be scaled to very small dimensions. However, most of these ReRAM are produced by physical methods and nowadays the industry demands more simplicity, typically associated with low cost manufacturing. As such, ReRAMs in this work are developed from a solution-based aluminum oxide (Al2O3) using a simple combustion synthesis process. The device performance is optimized by two-stage deposition of the Al2O3 film. The resistive switching properties of the bilayer devices are reproducible with a yield of 100%. The ReRAM devices show unipolar resistive switching behavior with good endurance and retention time up to 105 s at 85 °C. The devices can be programmed in a multi-level cell operation mode by application of different reset voltages. Temperature analysis of various resistance states reveals a filamentary nature based on the oxygen vacancies. The optimized film was stacked between ITO and indium zinc oxide, targeting a fully transparent device for applications on transparent system-on-panel technology.UNINOVA-Instituto de Desenvolvimento de Novas TecnologiasCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)DCM - Departamento de Ciência dos MateriaisRUNCarlos, EmanuelKiazadeh, AsalDeuermeier, JonasBranquinho, RitaMartins, RodrigoFortunato, Elvira2019-06-04T22:22:01Z2018-06-192018-06-19T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://doi.org/10.1088/1361-6528/aac9fbeng0957-4484PURE: 5584467http://www.scopus.com/inward/record.url?scp=85049354083&partnerID=8YFLogxKhttps://doi.org/10.1088/1361-6528/aac9fbinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:33:41Zoai:run.unl.pt:10362/71736Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:35:13.157759Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Critical role of a double-layer configuration in solution-based unipolar resistive switching memories
title Critical role of a double-layer configuration in solution-based unipolar resistive switching memories
spellingShingle Critical role of a double-layer configuration in solution-based unipolar resistive switching memories
Carlos, Emanuel
aluminum oxide (AlO)
resistive switching memory
solution combustion synthesis
transparent device
Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering
title_short Critical role of a double-layer configuration in solution-based unipolar resistive switching memories
title_full Critical role of a double-layer configuration in solution-based unipolar resistive switching memories
title_fullStr Critical role of a double-layer configuration in solution-based unipolar resistive switching memories
title_full_unstemmed Critical role of a double-layer configuration in solution-based unipolar resistive switching memories
title_sort Critical role of a double-layer configuration in solution-based unipolar resistive switching memories
author Carlos, Emanuel
author_facet Carlos, Emanuel
Kiazadeh, Asal
Deuermeier, Jonas
Branquinho, Rita
Martins, Rodrigo
Fortunato, Elvira
author_role author
author2 Kiazadeh, Asal
Deuermeier, Jonas
Branquinho, Rita
Martins, Rodrigo
Fortunato, Elvira
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
DCM - Departamento de Ciência dos Materiais
RUN
dc.contributor.author.fl_str_mv Carlos, Emanuel
Kiazadeh, Asal
Deuermeier, Jonas
Branquinho, Rita
Martins, Rodrigo
Fortunato, Elvira
dc.subject.por.fl_str_mv aluminum oxide (AlO)
resistive switching memory
solution combustion synthesis
transparent device
Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering
topic aluminum oxide (AlO)
resistive switching memory
solution combustion synthesis
transparent device
Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering
description SFRH/BPD/99136/2013. SFRH/BD/116047/2016. project FPA2016/EIT/EIT RawMaterials Grant Agreement 15015.
publishDate 2018
dc.date.none.fl_str_mv 2018-06-19
2018-06-19T00:00:00Z
2019-06-04T22:22:01Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://doi.org/10.1088/1361-6528/aac9fb
url https://doi.org/10.1088/1361-6528/aac9fb
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0957-4484
PURE: 5584467
http://www.scopus.com/inward/record.url?scp=85049354083&partnerID=8YFLogxK
https://doi.org/10.1088/1361-6528/aac9fb
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
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