Characterization of titanium silicon nitride films deposited by PVD
Autor(a) principal: | |
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Data de Publicação: | 1999 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/1822/61389 |
Resumo: | In recent years, nitride coatings have found widespread applications for tool and other hard surfaces. In this work, the (Ti,Si)N system was investigated and some of its properties characterised. For this, (Ti,Si)N films with thicknesses ranging from 1 to 3.3 mu m and different contents of Ti and Si were deposited onto silicon wafers and polished high-speed steel substrates by r.f. reactive magnetron sputtering technique. The atomic composition of the samples were measured by Rutherford Backscattering Spectrometry (RBS). Ti1-xSixN samples with 0 less than or equal to x less than or equal to 0.37 were produced. With regard to the structural properties, two cubic crystallographic structures were found, with lattice parameters of about a = 4.29 Angstrom and 4.18 Angstrom. The grain size, evaluated by Fourier analysis of X-ray peaks, ranged from 5 nm to 34 nm. Comparing the adhesion results, the Ti0.70Si0.30N and Ti0.83Si0.17N sample presented the best results in adhesion with a critical load for total failure around 115 N and 105 N, respectively. (C) 1998 Elsevier Science Ltd. All rights reserved. |
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Characterization of titanium silicon nitride films deposited by PVDCiências Naturais::Ciências FísicasScience & TechnologyIn recent years, nitride coatings have found widespread applications for tool and other hard surfaces. In this work, the (Ti,Si)N system was investigated and some of its properties characterised. For this, (Ti,Si)N films with thicknesses ranging from 1 to 3.3 mu m and different contents of Ti and Si were deposited onto silicon wafers and polished high-speed steel substrates by r.f. reactive magnetron sputtering technique. The atomic composition of the samples were measured by Rutherford Backscattering Spectrometry (RBS). Ti1-xSixN samples with 0 less than or equal to x less than or equal to 0.37 were produced. With regard to the structural properties, two cubic crystallographic structures were found, with lattice parameters of about a = 4.29 Angstrom and 4.18 Angstrom. The grain size, evaluated by Fourier analysis of X-ray peaks, ranged from 5 nm to 34 nm. Comparing the adhesion results, the Ti0.70Si0.30N and Ti0.83Si0.17N sample presented the best results in adhesion with a critical load for total failure around 115 N and 105 N, respectively. (C) 1998 Elsevier Science Ltd. All rights reserved.JNICT - Junta Nacional de Investigação Científica e Tecnológica(PBICT/P/CTM/1962/95)PERGAMON-ELSEVIER SCIENCE LTDUniversidade do MinhoVaz, F.Rebouta, L.da Silva, R. M. C.da Silva, M. F.Soares, J. C.1999-01-011999-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/61389engVaz, F., Rebouta, L., Da Silva, R. M. C., Da Silva, M. F., & Soares, J. C. (1999). Chacterization of titanium silicon nitride films deposited by PVD. Vacuum, 52(1-2), 209-214.0042-207X10.1016/S0042-207X(98)00222-Xhttps://www.sciencedirect.com/science/article/pii/S0042207X9800222Xinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:52:02Zoai:repositorium.sdum.uminho.pt:1822/61389Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:51:03.989477Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Characterization of titanium silicon nitride films deposited by PVD |
title |
Characterization of titanium silicon nitride films deposited by PVD |
spellingShingle |
Characterization of titanium silicon nitride films deposited by PVD Vaz, F. Ciências Naturais::Ciências Físicas Science & Technology |
title_short |
Characterization of titanium silicon nitride films deposited by PVD |
title_full |
Characterization of titanium silicon nitride films deposited by PVD |
title_fullStr |
Characterization of titanium silicon nitride films deposited by PVD |
title_full_unstemmed |
Characterization of titanium silicon nitride films deposited by PVD |
title_sort |
Characterization of titanium silicon nitride films deposited by PVD |
author |
Vaz, F. |
author_facet |
Vaz, F. Rebouta, L. da Silva, R. M. C. da Silva, M. F. Soares, J. C. |
author_role |
author |
author2 |
Rebouta, L. da Silva, R. M. C. da Silva, M. F. Soares, J. C. |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Vaz, F. Rebouta, L. da Silva, R. M. C. da Silva, M. F. Soares, J. C. |
dc.subject.por.fl_str_mv |
Ciências Naturais::Ciências Físicas Science & Technology |
topic |
Ciências Naturais::Ciências Físicas Science & Technology |
description |
In recent years, nitride coatings have found widespread applications for tool and other hard surfaces. In this work, the (Ti,Si)N system was investigated and some of its properties characterised. For this, (Ti,Si)N films with thicknesses ranging from 1 to 3.3 mu m and different contents of Ti and Si were deposited onto silicon wafers and polished high-speed steel substrates by r.f. reactive magnetron sputtering technique. The atomic composition of the samples were measured by Rutherford Backscattering Spectrometry (RBS). Ti1-xSixN samples with 0 less than or equal to x less than or equal to 0.37 were produced. With regard to the structural properties, two cubic crystallographic structures were found, with lattice parameters of about a = 4.29 Angstrom and 4.18 Angstrom. The grain size, evaluated by Fourier analysis of X-ray peaks, ranged from 5 nm to 34 nm. Comparing the adhesion results, the Ti0.70Si0.30N and Ti0.83Si0.17N sample presented the best results in adhesion with a critical load for total failure around 115 N and 105 N, respectively. (C) 1998 Elsevier Science Ltd. All rights reserved. |
publishDate |
1999 |
dc.date.none.fl_str_mv |
1999-01-01 1999-01-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1822/61389 |
url |
http://hdl.handle.net/1822/61389 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Vaz, F., Rebouta, L., Da Silva, R. M. C., Da Silva, M. F., & Soares, J. C. (1999). Chacterization of titanium silicon nitride films deposited by PVD. Vacuum, 52(1-2), 209-214. 0042-207X 10.1016/S0042-207X(98)00222-X https://www.sciencedirect.com/science/article/pii/S0042207X9800222X |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
PERGAMON-ELSEVIER SCIENCE LTD |
publisher.none.fl_str_mv |
PERGAMON-ELSEVIER SCIENCE LTD |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799133097501917184 |