Optimization of MAPbI 3 -films grown under ambient conditions on Si/SiO 2 substrates for electrical characterization of perovskite materials

• Autor(a) principal: Ferreira, Guilherme Lopes Costa
• Data de Publicação: 2022
• Tipo de documento: Dissertação
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/10362/153474
• topic: perovskite material; transistor; MaPbI3; perovskite characterization; Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia

Perovskite materials have recently emerged as a family of potential semiconductor materials for the fabrication of optoelectronic devices such as solar cells, light-emitting diodes, and transistors. This thesis aims to expand the available deposition and characterization techniques of the perovskite materials used by the research group I integrated. This allowed for the extraction of the doping character (n or p) of the perovskite layers deposited. To this end the deposition of MAPbI3 (MAPI) perovskite material on an Si/SiO2 substrate was thoroughly researched and optimized based on morphological, structural, and opti- cal characterization. For that, different solutions, annealing methods and spin-coating parameters were tested and analyzed with the help of characterization tools like SEM, XRD, UV-vis and PL. The film deposition was done under ambient conditions with the aim of allowing this characteriza- tion and deposition method to be made without more expensive equipment like the glovebox, where these materials are usually deposited, due to the controlled atmosphere conditions. The MAPI films showed a small number or nonexistence of pinholes with good coverage across the film. PL and UV-vis measurements revealed a 1.59 eV band gap. The devices showed a field effect mobility of 1.5 · 10!" cm2 /V.s. At lower temperature, the devices improved, and the mobility extracted was 6.1 · 10!# cm2 /V.s.