Optimization of MAPbI 3 -films grown under ambient conditions on Si/SiO 2 substrates for electrical characterization of perovskite materials
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Tipo de documento: | Dissertação |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10362/153474 |
Resumo: | Perovskite materials have recently emerged as a family of potential semiconductor materials for the fabrication of optoelectronic devices such as solar cells, light-emitting diodes, and transistors. This thesis aims to expand the available deposition and characterization techniques of the perovskite materials used by the research group I integrated. This allowed for the extraction of the doping character (n or p) of the perovskite layers deposited. To this end the deposition of MAPbI3 (MAPI) perovskite material on an Si/SiO2 substrate was thoroughly researched and optimized based on morphological, structural, and opti- cal characterization. For that, different solutions, annealing methods and spin-coating parameters were tested and analyzed with the help of characterization tools like SEM, XRD, UV-vis and PL. The film deposition was done under ambient conditions with the aim of allowing this characteriza- tion and deposition method to be made without more expensive equipment like the glovebox, where these materials are usually deposited, due to the controlled atmosphere conditions. The MAPI films showed a small number or nonexistence of pinholes with good coverage across the film. PL and UV-vis measurements revealed a 1.59 eV band gap. The devices showed a field effect mobility of 1.5 · 10!" cm2 /V.s. At lower temperature, the devices improved, and the mobility extracted was 6.1 · 10!# cm2 /V.s. |
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Optimization of MAPbI 3 -films grown under ambient conditions on Si/SiO 2 substrates for electrical characterization of perovskite materialsperovskite materialtransistorMaPbI3perovskite characterizationDomínio/Área Científica::Engenharia e Tecnologia::NanotecnologiaPerovskite materials have recently emerged as a family of potential semiconductor materials for the fabrication of optoelectronic devices such as solar cells, light-emitting diodes, and transistors. This thesis aims to expand the available deposition and characterization techniques of the perovskite materials used by the research group I integrated. This allowed for the extraction of the doping character (n or p) of the perovskite layers deposited. To this end the deposition of MAPbI3 (MAPI) perovskite material on an Si/SiO2 substrate was thoroughly researched and optimized based on morphological, structural, and opti- cal characterization. For that, different solutions, annealing methods and spin-coating parameters were tested and analyzed with the help of characterization tools like SEM, XRD, UV-vis and PL. The film deposition was done under ambient conditions with the aim of allowing this characteriza- tion and deposition method to be made without more expensive equipment like the glovebox, where these materials are usually deposited, due to the controlled atmosphere conditions. The MAPI films showed a small number or nonexistence of pinholes with good coverage across the film. PL and UV-vis measurements revealed a 1.59 eV band gap. The devices showed a field effect mobility of 1.5 · 10!" cm2 /V.s. At lower temperature, the devices improved, and the mobility extracted was 6.1 · 10!# cm2 /V.s.Materiais de perovskite têm surgido como potencias candidatos ao fabrico de dispositivos optoelec- trónicos como células solares, díodos emissores de luz e transístores. Esta tese pretende expandir as técnicas de deposição e caracterização dos materiais de perovskite usa- dos pelo grupo de pesquisa integrado. Para esse fim, a deposição da perovskite MAPbI3 (MAPI) em um substrato de Si/SiO 2 foi totalmente analisada e otimizada baseado em caracterização morfológica, estrutural e ótica. Para isso, soluções diferentes, métodos de recozimento e parâmetros de spin-coating foram testados e analisados com a ajuda de ferramentas de caracterização como SEM, XRD, UV-vis, e PL. A deposição do filme foi feita sobre condições ambientes com o intuito de permitir a caracterização e depo- sição destes materiais sem a necessidade de equipamento mais caro como uma glove-box, onde estes materi- ais são usualmente depositados devido as condições atmosféricas controladas que o equipamento permite. Os filmes de MAPI mostraram boa cobertura com a inexistência de buracos ao longo do filme. Me- dições de PL e UV-vis revelaram um hiato energético de 1.59 eV. Os dispositivos demonstraram uma mobi- lidade de efeito de campo de 1.5 · 10!" cm2 /V.s. A temperaturas mais baixas, os dispositivos melhoraram e mostraram uma mobilidade de 6.1 · 10!# cm2 /V.s.Ramiro González, IñigoMendes, ManuelRUNFerreira, Guilherme Lopes Costa2023-06-02T13:32:25Z2022-122022-12-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisapplication/pdfhttp://hdl.handle.net/10362/153474enginfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T05:35:58Zoai:run.unl.pt:10362/153474Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:55:16.961193Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Optimization of MAPbI 3 -films grown under ambient conditions on Si/SiO 2 substrates for electrical characterization of perovskite materials |
title |
Optimization of MAPbI 3 -films grown under ambient conditions on Si/SiO 2 substrates for electrical characterization of perovskite materials |
spellingShingle |
Optimization of MAPbI 3 -films grown under ambient conditions on Si/SiO 2 substrates for electrical characterization of perovskite materials Ferreira, Guilherme Lopes Costa perovskite material transistor MaPbI3 perovskite characterization Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia |
title_short |
Optimization of MAPbI 3 -films grown under ambient conditions on Si/SiO 2 substrates for electrical characterization of perovskite materials |
title_full |
Optimization of MAPbI 3 -films grown under ambient conditions on Si/SiO 2 substrates for electrical characterization of perovskite materials |
title_fullStr |
Optimization of MAPbI 3 -films grown under ambient conditions on Si/SiO 2 substrates for electrical characterization of perovskite materials |
title_full_unstemmed |
Optimization of MAPbI 3 -films grown under ambient conditions on Si/SiO 2 substrates for electrical characterization of perovskite materials |
title_sort |
Optimization of MAPbI 3 -films grown under ambient conditions on Si/SiO 2 substrates for electrical characterization of perovskite materials |
author |
Ferreira, Guilherme Lopes Costa |
author_facet |
Ferreira, Guilherme Lopes Costa |
author_role |
author |
dc.contributor.none.fl_str_mv |
Ramiro González, Iñigo Mendes, Manuel RUN |
dc.contributor.author.fl_str_mv |
Ferreira, Guilherme Lopes Costa |
dc.subject.por.fl_str_mv |
perovskite material transistor MaPbI3 perovskite characterization Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia |
topic |
perovskite material transistor MaPbI3 perovskite characterization Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia |
description |
Perovskite materials have recently emerged as a family of potential semiconductor materials for the fabrication of optoelectronic devices such as solar cells, light-emitting diodes, and transistors. This thesis aims to expand the available deposition and characterization techniques of the perovskite materials used by the research group I integrated. This allowed for the extraction of the doping character (n or p) of the perovskite layers deposited. To this end the deposition of MAPbI3 (MAPI) perovskite material on an Si/SiO2 substrate was thoroughly researched and optimized based on morphological, structural, and opti- cal characterization. For that, different solutions, annealing methods and spin-coating parameters were tested and analyzed with the help of characterization tools like SEM, XRD, UV-vis and PL. The film deposition was done under ambient conditions with the aim of allowing this characteriza- tion and deposition method to be made without more expensive equipment like the glovebox, where these materials are usually deposited, due to the controlled atmosphere conditions. The MAPI films showed a small number or nonexistence of pinholes with good coverage across the film. PL and UV-vis measurements revealed a 1.59 eV band gap. The devices showed a field effect mobility of 1.5 · 10!" cm2 /V.s. At lower temperature, the devices improved, and the mobility extracted was 6.1 · 10!# cm2 /V.s. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-12 2022-12-01T00:00:00Z 2023-06-02T13:32:25Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10362/153474 |
url |
http://hdl.handle.net/10362/153474 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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