Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons

Detalhes bibliográficos
Autor(a) principal: Bory, Benjamin F.
Data de Publicação: 2014
Outros Autores: Rocha, Paulo, Janssen, Rene A. J., Gomes, Henrique L., De Leeuw, Dago M., Meskers, Stefan C. J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.1/11947
Resumo: Thin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density-electroluminescence-voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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spelling Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electronsLight-Emitting-DiodesAlkali-HalidesAl/Lif ElectrodeExcitationThin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density-electroluminescence-voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.Dutch Polymer Institute (DPI) [704]; Fundacao para Ciencia e Tecnologia (FCT) through research Unit, Center of Electronics Optoelectronics and Telecommunications (CEOT) [631]; European Community [212311]; Dutch Ministry of Education, Culture and Science [024.001.035]AIP PublishingSapientiaBory, Benjamin F.Rocha, PauloJanssen, Rene A. J.Gomes, Henrique L.De Leeuw, Dago M.Meskers, Stefan C. J.2018-12-07T14:58:17Z2014-092014-09-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/11947eng0003-6951https://doi.org/10.1063/1.4896636info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-24T10:23:51Zoai:sapientia.ualg.pt:10400.1/11947Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T20:03:22.965930Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
title Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
spellingShingle Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
Bory, Benjamin F.
Light-Emitting-Diodes
Alkali-Halides
Al/Lif Electrode
Excitation
title_short Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
title_full Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
title_fullStr Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
title_full_unstemmed Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
title_sort Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
author Bory, Benjamin F.
author_facet Bory, Benjamin F.
Rocha, Paulo
Janssen, Rene A. J.
Gomes, Henrique L.
De Leeuw, Dago M.
Meskers, Stefan C. J.
author_role author
author2 Rocha, Paulo
Janssen, Rene A. J.
Gomes, Henrique L.
De Leeuw, Dago M.
Meskers, Stefan C. J.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Sapientia
dc.contributor.author.fl_str_mv Bory, Benjamin F.
Rocha, Paulo
Janssen, Rene A. J.
Gomes, Henrique L.
De Leeuw, Dago M.
Meskers, Stefan C. J.
dc.subject.por.fl_str_mv Light-Emitting-Diodes
Alkali-Halides
Al/Lif Electrode
Excitation
topic Light-Emitting-Diodes
Alkali-Halides
Al/Lif Electrode
Excitation
description Thin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density-electroluminescence-voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
publishDate 2014
dc.date.none.fl_str_mv 2014-09
2014-09-01T00:00:00Z
2018-12-07T14:58:17Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
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status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.1/11947
url http://hdl.handle.net/10400.1/11947
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0003-6951
https://doi.org/10.1063/1.4896636
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
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dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AIP Publishing
publisher.none.fl_str_mv AIP Publishing
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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