Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons
Autor(a) principal: | |
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Data de Publicação: | 2014 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10400.1/11947 |
Resumo: | Thin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density-electroluminescence-voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. |
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Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electronsLight-Emitting-DiodesAlkali-HalidesAl/Lif ElectrodeExcitationThin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density-electroluminescence-voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.Dutch Polymer Institute (DPI) [704]; Fundacao para Ciencia e Tecnologia (FCT) through research Unit, Center of Electronics Optoelectronics and Telecommunications (CEOT) [631]; European Community [212311]; Dutch Ministry of Education, Culture and Science [024.001.035]AIP PublishingSapientiaBory, Benjamin F.Rocha, PauloJanssen, Rene A. J.Gomes, Henrique L.De Leeuw, Dago M.Meskers, Stefan C. J.2018-12-07T14:58:17Z2014-092014-09-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/11947eng0003-6951https://doi.org/10.1063/1.4896636info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-24T10:23:51Zoai:sapientia.ualg.pt:10400.1/11947Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T20:03:22.965930Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons |
title |
Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons |
spellingShingle |
Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons Bory, Benjamin F. Light-Emitting-Diodes Alkali-Halides Al/Lif Electrode Excitation |
title_short |
Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons |
title_full |
Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons |
title_fullStr |
Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons |
title_full_unstemmed |
Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons |
title_sort |
Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons |
author |
Bory, Benjamin F. |
author_facet |
Bory, Benjamin F. Rocha, Paulo Janssen, Rene A. J. Gomes, Henrique L. De Leeuw, Dago M. Meskers, Stefan C. J. |
author_role |
author |
author2 |
Rocha, Paulo Janssen, Rene A. J. Gomes, Henrique L. De Leeuw, Dago M. Meskers, Stefan C. J. |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Sapientia |
dc.contributor.author.fl_str_mv |
Bory, Benjamin F. Rocha, Paulo Janssen, Rene A. J. Gomes, Henrique L. De Leeuw, Dago M. Meskers, Stefan C. J. |
dc.subject.por.fl_str_mv |
Light-Emitting-Diodes Alkali-Halides Al/Lif Electrode Excitation |
topic |
Light-Emitting-Diodes Alkali-Halides Al/Lif Electrode Excitation |
description |
Thin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density-electroluminescence-voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. |
publishDate |
2014 |
dc.date.none.fl_str_mv |
2014-09 2014-09-01T00:00:00Z 2018-12-07T14:58:17Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10400.1/11947 |
url |
http://hdl.handle.net/10400.1/11947 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0003-6951 https://doi.org/10.1063/1.4896636 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
AIP Publishing |
publisher.none.fl_str_mv |
AIP Publishing |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799133268006666240 |