Argon assisted chemical vapor deposition of CrO2: An efficient process leading to high quality epitaxial films

Detalhes bibliográficos
Autor(a) principal: Duarte, A. C.
Data de Publicação: 2016
Outros Autores: Franco, N., Viana, A. S., Polushkin, N. I., Silvestre, António Jorge, Conde, O.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.21/7401
Resumo: A comparative study of the structural, microstructural and magnetic properties of CrO2 thin films grown onto (110) and (100) TiO2 rutile single crystal substrates by chemical vapor deposition (CVD), using CrO3 as chromium precursor and either oxygen or argon as carrier gas is presented. Our results show that growth under argon carrier gas leads to high quality CrO2 epilayers with structural and magnetic properties similar to those obtained using the more standard oxygen carrier gas. Furthermore, we interpret the larger magnetic coercivity observed for the (110) oriented films in terms of their microstructure, in particular of the highest strain and edge roughness of the building structures of the CrO2 epilayers, which are settled by the substrate crystallographic orientation.
id RCAP_5c0c927919406ef37fd21fc552bd3059
oai_identifier_str oai:repositorio.ipl.pt:10400.21/7401
network_acronym_str RCAP
network_name_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository_id_str 7160
spelling Argon assisted chemical vapor deposition of CrO2: An efficient process leading to high quality epitaxial filmsCrO2 thin filmsChemical vapor depositionArgon assisted growthHalf metalsX-ray diffractionMagnetic measurementsA comparative study of the structural, microstructural and magnetic properties of CrO2 thin films grown onto (110) and (100) TiO2 rutile single crystal substrates by chemical vapor deposition (CVD), using CrO3 as chromium precursor and either oxygen or argon as carrier gas is presented. Our results show that growth under argon carrier gas leads to high quality CrO2 epilayers with structural and magnetic properties similar to those obtained using the more standard oxygen carrier gas. Furthermore, we interpret the larger magnetic coercivity observed for the (110) oriented films in terms of their microstructure, in particular of the highest strain and edge roughness of the building structures of the CrO2 epilayers, which are settled by the substrate crystallographic orientation.PTDC/FIS/121588/2010PEst-OE/CTM/UI-00084UID/CTM/04540/2013ElsevierRCIPLDuarte, A. C.Franco, N.Viana, A. S.Polushkin, N. I.Silvestre, António JorgeConde, O.2017-09-29T09:29:23Z20162016-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.21/7401engDUARTE, A. C.; [et al] - Argon assisted chemical vapor deposition of CrO2: An efficient process leading to high quality epitaxial films. Journal of Alloys and Compounds. ISSN 0925-8388. Vol. 684, (2016), pp. 98-1040925-838810.1016/j.jallcom.2016.05.167metadata only accessinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-08-03T09:53:25Zoai:repositorio.ipl.pt:10400.21/7401Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T20:16:21.676486Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Argon assisted chemical vapor deposition of CrO2: An efficient process leading to high quality epitaxial films
title Argon assisted chemical vapor deposition of CrO2: An efficient process leading to high quality epitaxial films
spellingShingle Argon assisted chemical vapor deposition of CrO2: An efficient process leading to high quality epitaxial films
Duarte, A. C.
CrO2 thin films
Chemical vapor deposition
Argon assisted growth
Half metals
X-ray diffraction
Magnetic measurements
title_short Argon assisted chemical vapor deposition of CrO2: An efficient process leading to high quality epitaxial films
title_full Argon assisted chemical vapor deposition of CrO2: An efficient process leading to high quality epitaxial films
title_fullStr Argon assisted chemical vapor deposition of CrO2: An efficient process leading to high quality epitaxial films
title_full_unstemmed Argon assisted chemical vapor deposition of CrO2: An efficient process leading to high quality epitaxial films
title_sort Argon assisted chemical vapor deposition of CrO2: An efficient process leading to high quality epitaxial films
author Duarte, A. C.
author_facet Duarte, A. C.
Franco, N.
Viana, A. S.
Polushkin, N. I.
Silvestre, António Jorge
Conde, O.
author_role author
author2 Franco, N.
Viana, A. S.
Polushkin, N. I.
Silvestre, António Jorge
Conde, O.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv RCIPL
dc.contributor.author.fl_str_mv Duarte, A. C.
Franco, N.
Viana, A. S.
Polushkin, N. I.
Silvestre, António Jorge
Conde, O.
dc.subject.por.fl_str_mv CrO2 thin films
Chemical vapor deposition
Argon assisted growth
Half metals
X-ray diffraction
Magnetic measurements
topic CrO2 thin films
Chemical vapor deposition
Argon assisted growth
Half metals
X-ray diffraction
Magnetic measurements
description A comparative study of the structural, microstructural and magnetic properties of CrO2 thin films grown onto (110) and (100) TiO2 rutile single crystal substrates by chemical vapor deposition (CVD), using CrO3 as chromium precursor and either oxygen or argon as carrier gas is presented. Our results show that growth under argon carrier gas leads to high quality CrO2 epilayers with structural and magnetic properties similar to those obtained using the more standard oxygen carrier gas. Furthermore, we interpret the larger magnetic coercivity observed for the (110) oriented films in terms of their microstructure, in particular of the highest strain and edge roughness of the building structures of the CrO2 epilayers, which are settled by the substrate crystallographic orientation.
publishDate 2016
dc.date.none.fl_str_mv 2016
2016-01-01T00:00:00Z
2017-09-29T09:29:23Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.21/7401
url http://hdl.handle.net/10400.21/7401
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv DUARTE, A. C.; [et al] - Argon assisted chemical vapor deposition of CrO2: An efficient process leading to high quality epitaxial films. Journal of Alloys and Compounds. ISSN 0925-8388. Vol. 684, (2016), pp. 98-104
0925-8388
10.1016/j.jallcom.2016.05.167
dc.rights.driver.fl_str_mv metadata only access
info:eu-repo/semantics/openAccess
rights_invalid_str_mv metadata only access
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
_version_ 1799133423861760000

Registros relacionados