Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters

Detalhes bibliográficos
Autor(a) principal: Rovisco, Ana
Data de Publicação: 2018
Outros Autores: Branquinho, Rita, Martins, Jorge, Oliveira, Maria João, Nunes, Daniela, Fortunato, Elvira, Martins, Rodrigo, Barquinha, Pedro
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10362/71741
Resumo: POCI-01-0145-FEDER-007688
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spelling Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical ParametersnanostructurenanowireZn2SnO4ZnSnO3hydrothermal synthesisZTOPOCI-01-0145-FEDER-007688Semiconductor nanowires are mostly processed by complex, expensive, and high temperature methods. In this work, with the intent of developing zinc tin oxide nanowires (ZTO NWs) by low-cost and low-complexity processes, we show a detailed study on the influence of chemical parameters in the hydrothermal synthesis of ZTO nanostructures at temperatures of only 200 degrees C. Two different zinc precursors, the ratio between zinc and tin precursors, and the concentration of the surfactant agent and of the mineralizer were studied. The type and the crystallinity of the nanostructures were found to be highly dependent on the used precursors and on the concentration of each reagent. Conditions for obtaining different ZTO nanostructures were achieved, namely, Zn2SnO4 nanoparticles and ZnSnO3 nanowires with length similar to 600 nm, with the latter being reported for the first time ever by hydrothermal methods without the use of seed layers. Optical and electrical properties were analyzed, obtaining band gaps of 3.60 and 3.46 eV for ZnSnO3 and Zn2SnO4, respectively, and a resistivity of 1.42 k Omega.cm for single ZnSnO3 nanowires, measured using nanomanipulators after localized deposition of Pt electrodes by e-beam assisted gas decomposition. The low-temperature hydrothermal methods explored here proved to be a low-cost, reproducible, and highly flexible route to obtain multicomponent oxide nanostructures, particularly ZTO NWs. The diversity of the synthesized ZTO structures has potential application in next-generation nanoscale devices such as field effect nanotransistors, nanogenerators, resistive switching memories, gas sensors, and photocatalysis.DCM - Departamento de Ciência dos MateriaisCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)UNINOVA-Instituto de Desenvolvimento de Novas TecnologiasRUNRovisco, AnaBranquinho, RitaMartins, JorgeOliveira, Maria JoãoNunes, DanielaFortunato, ElviraMartins, RodrigoBarquinha, Pedro2019-06-04T22:27:56Z2018-082018-08-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10362/71741eng2574-0970PURE: 13042618https://doi.org/10.1021/acsanm.8b00743info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:33:41Zoai:run.unl.pt:10362/71741Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:35:13.317675Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters
title Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters
spellingShingle Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters
Rovisco, Ana
nanostructure
nanowire
Zn2SnO4
ZnSnO3
hydrothermal synthesis
ZTO
title_short Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters
title_full Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters
title_fullStr Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters
title_full_unstemmed Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters
title_sort Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters
author Rovisco, Ana
author_facet Rovisco, Ana
Branquinho, Rita
Martins, Jorge
Oliveira, Maria João
Nunes, Daniela
Fortunato, Elvira
Martins, Rodrigo
Barquinha, Pedro
author_role author
author2 Branquinho, Rita
Martins, Jorge
Oliveira, Maria João
Nunes, Daniela
Fortunato, Elvira
Martins, Rodrigo
Barquinha, Pedro
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv DCM - Departamento de Ciência dos Materiais
CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
RUN
dc.contributor.author.fl_str_mv Rovisco, Ana
Branquinho, Rita
Martins, Jorge
Oliveira, Maria João
Nunes, Daniela
Fortunato, Elvira
Martins, Rodrigo
Barquinha, Pedro
dc.subject.por.fl_str_mv nanostructure
nanowire
Zn2SnO4
ZnSnO3
hydrothermal synthesis
ZTO
topic nanostructure
nanowire
Zn2SnO4
ZnSnO3
hydrothermal synthesis
ZTO
description POCI-01-0145-FEDER-007688
publishDate 2018
dc.date.none.fl_str_mv 2018-08
2018-08-01T00:00:00Z
2019-06-04T22:27:56Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/71741
url http://hdl.handle.net/10362/71741
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2574-0970
PURE: 13042618
https://doi.org/10.1021/acsanm.8b00743
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
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