XPS study of the thermal vapour sulfurization of tungsten thin films

Detalhes bibliográficos
Autor(a) principal: Otero-Irurueta, Gonzalo
Data de Publicação: 2019
Outros Autores: Hortigüela, Maria J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10773/38240
Resumo: Here we report the XPS spectra of thermally sulfurized tungsten thin films on SiO2 at different temperatures. The sulfurization was performed in a chemical vapour deposition system at 400 ºC, 500 ºC, 550 ºC, 600 ºC and 750 ºC. Below 500 ºC XPS showed that the tungsten layer was oxidized (W6+) and only carbon-sulfur compounds were detected. On the other hand, from 600 ºC the sulfurization process was complete by forming WS2, while at the intermediate temperature of 550 ºC the films were partially oxidized and partially sulfurized.
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spelling XPS study of the thermal vapour sulfurization of tungsten thin filmsWS2Thermal vapour sulfurizationXPSHere we report the XPS spectra of thermally sulfurized tungsten thin films on SiO2 at different temperatures. The sulfurization was performed in a chemical vapour deposition system at 400 ºC, 500 ºC, 550 ºC, 600 ºC and 750 ºC. Below 500 ºC XPS showed that the tungsten layer was oxidized (W6+) and only carbon-sulfur compounds were detected. On the other hand, from 600 ºC the sulfurization process was complete by forming WS2, while at the intermediate temperature of 550 ºC the films were partially oxidized and partially sulfurized.University of Aveiro2023-06-26T08:35:35Z2019-12-18T00:00:00Z2019-12-18info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/38240eng2184-700210.34624/nmse.v1i1.6757Otero-Irurueta, GonzaloHortigüela, Maria J.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T12:14:41Zoai:ria.ua.pt:10773/38240Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:08:45.309457Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv XPS study of the thermal vapour sulfurization of tungsten thin films
title XPS study of the thermal vapour sulfurization of tungsten thin films
spellingShingle XPS study of the thermal vapour sulfurization of tungsten thin films
Otero-Irurueta, Gonzalo
WS2
Thermal vapour sulfurization
XPS
title_short XPS study of the thermal vapour sulfurization of tungsten thin films
title_full XPS study of the thermal vapour sulfurization of tungsten thin films
title_fullStr XPS study of the thermal vapour sulfurization of tungsten thin films
title_full_unstemmed XPS study of the thermal vapour sulfurization of tungsten thin films
title_sort XPS study of the thermal vapour sulfurization of tungsten thin films
author Otero-Irurueta, Gonzalo
author_facet Otero-Irurueta, Gonzalo
Hortigüela, Maria J.
author_role author
author2 Hortigüela, Maria J.
author2_role author
dc.contributor.author.fl_str_mv Otero-Irurueta, Gonzalo
Hortigüela, Maria J.
dc.subject.por.fl_str_mv WS2
Thermal vapour sulfurization
XPS
topic WS2
Thermal vapour sulfurization
XPS
description Here we report the XPS spectra of thermally sulfurized tungsten thin films on SiO2 at different temperatures. The sulfurization was performed in a chemical vapour deposition system at 400 ºC, 500 ºC, 550 ºC, 600 ºC and 750 ºC. Below 500 ºC XPS showed that the tungsten layer was oxidized (W6+) and only carbon-sulfur compounds were detected. On the other hand, from 600 ºC the sulfurization process was complete by forming WS2, while at the intermediate temperature of 550 ºC the films were partially oxidized and partially sulfurized.
publishDate 2019
dc.date.none.fl_str_mv 2019-12-18T00:00:00Z
2019-12-18
2023-06-26T08:35:35Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
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status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10773/38240
url http://hdl.handle.net/10773/38240
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2184-7002
10.34624/nmse.v1i1.6757
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv University of Aveiro
publisher.none.fl_str_mv University of Aveiro
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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