Piezoresistor sensor fabrication by direct laser writing on hydrogenated amorphous silicon

• Autor(a) principal: Alpuim, P.
• Data de Publicação: 2014
• Outros Autores: Cerqueira, M. F., Noh, J., Gaspar, J., Borme, J.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/1822/27347
• topic: Laser crystallization; Nanocrystalline silicon; Flexible electronics; Direct laser write; chemical vapor deposition (CVD) (deposition); laser annealing; Raman spectroscopy

In this paper we report on the 532 nm Nd:YAG laser-induced crystallization of 10 nm thick boron-doped hydrogenated amorphous silicon thin films deposited on flexible polyimide and on rigid oxidized silicon wafers by hot-wire chemical vapor deposition. The dark conductivity increased from ~10-7 -1cm-1, in the as-deposited films, to ~10 and 50 -1cm-1 after laser irradiation, on rigid and flexible substrates, respectively. Depending on type of substrate, laser power and fluence, a Raman crystalline fraction between 55 and 90% was measured in HWCVD films, which was higher than observed in rf-PECVD films (35 - 55%). Crystallite size remained small in all cases, in the range 6-8 nm. Due to a very high conductivity contrast (>7 orders of magnitude) between amorphous and crystallized regions, it was possible to define conductive paths in the a-Si:H matrix, by mounting the sample on a X-Y software-controlled movable stage under the laser beam, with no need for the usual lithography steps. The resistors scribed by direct laser writing had piezoresistive properties, with positive gauge factor ~1. The details of the laser interaction process with the Si film were revealed by scanning electron microscopy imaging.