Modeling of laser emission at 0.9 µm in Nd:LiNbO

• Autor(a) principal: Almeida, José Manuel Marques Martins de
• Data de Publicação: 2000
• Outros Autores: Amin, Jaymin, Leite, António Manuel Pais Pereira
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/10348/11756
• topic: Integrated optics; LiNbO3 devices

A theoretical investigation on laser oscillation at 0.9 µm in Ti waveguides in LiNbO3 doped with Nd ions is presented. Laser emission at 0.9 µm in Ti waveguides in Nd:LiNbO3 crystals was recently demonstrated. However, lasing was reported as unstable and lasting only few seconds and parasitic lasing on the higher gain transition at 1.08 µm has been shown to be a problem. In this work the possibility of obtaining efficient and stable laser oscillation at 0.9 µm in Ti:LiNbO3 waveguides fabricated in substrates doped with Nd ions by thermal diffusion of thin metallic stripes or planar thin films was theoretically evaluated. It was concluded that emission at 0.9 µm, with complete suppression of the parasitic emission at 1.08 µm, should be possible by selectively increasing the losses at 1.08 µm, optimization of waveguide and laser cavity, spatial localization of the Nd ions and the use of the dependence on polarization of the emission cross sections at 0.9 and 1.08µm.