Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides

Detalhes bibliográficos
Autor(a) principal: Almeida, José Manuel Marques Martins de
Data de Publicação: 1999
Outros Autores: Amin, Jaymin, Leite, António Manuel Pais Pereira
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10348/11759
Resumo: An investigation on optical amplification in Ti waveguides in LiNb0 3 doped with Er ions by thermal diffusion of thin metallic stripes is presented. The possibility of fabricating efficient optical amplifiers in LiNb0 3 substrates realized by localization of the dopant on surface areas of the crystals was theoretically evaluated and the feasibility of fabricating efficient amplifiers in such doped structures was experimentally verified. It was concluded that the localized doping technique allows optimization of amplifier performance through adjustment of the active region geometry to the mode intensity profile.
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spelling Optical amplification in localized doping of Er:Ti:LiNbO3 waveguidesIntegrated opticsLiNb0 3 devicesAn investigation on optical amplification in Ti waveguides in LiNb0 3 doped with Er ions by thermal diffusion of thin metallic stripes is presented. The possibility of fabricating efficient optical amplifiers in LiNb0 3 substrates realized by localization of the dopant on surface areas of the crystals was theoretically evaluated and the feasibility of fabricating efficient amplifiers in such doped structures was experimentally verified. It was concluded that the localized doping technique allows optimization of amplifier performance through adjustment of the active region geometry to the mode intensity profile.SPIE2023-10-09T15:13:58Z1999-01-01T00:00:00Z19992016-10-22T15:11:19Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10348/11759engAlmeida, José Manuel Marques Martins deAmin, JayminLeite, António Manuel Pais Pereirainfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-02T12:38:39Zoai:repositorio.utad.pt:10348/11759Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T02:02:05.892006Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
title Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
spellingShingle Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
Almeida, José Manuel Marques Martins de
Integrated optics
LiNb0 3 devices
title_short Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
title_full Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
title_fullStr Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
title_full_unstemmed Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
title_sort Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides
author Almeida, José Manuel Marques Martins de
author_facet Almeida, José Manuel Marques Martins de
Amin, Jaymin
Leite, António Manuel Pais Pereira
author_role author
author2 Amin, Jaymin
Leite, António Manuel Pais Pereira
author2_role author
author
dc.contributor.author.fl_str_mv Almeida, José Manuel Marques Martins de
Amin, Jaymin
Leite, António Manuel Pais Pereira
dc.subject.por.fl_str_mv Integrated optics
LiNb0 3 devices
topic Integrated optics
LiNb0 3 devices
description An investigation on optical amplification in Ti waveguides in LiNb0 3 doped with Er ions by thermal diffusion of thin metallic stripes is presented. The possibility of fabricating efficient optical amplifiers in LiNb0 3 substrates realized by localization of the dopant on surface areas of the crystals was theoretically evaluated and the feasibility of fabricating efficient amplifiers in such doped structures was experimentally verified. It was concluded that the localized doping technique allows optimization of amplifier performance through adjustment of the active region geometry to the mode intensity profile.
publishDate 1999
dc.date.none.fl_str_mv 1999-01-01T00:00:00Z
1999
2016-10-22T15:11:19Z
2023-10-09T15:13:58Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10348/11759
url http://hdl.handle.net/10348/11759
dc.language.iso.fl_str_mv eng
language eng
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dc.publisher.none.fl_str_mv SPIE
publisher.none.fl_str_mv SPIE
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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