Influence of nitrogen content on the structural, mechanical and electrical properties of TiN thin films

• Autor(a) principal: Vaz, F.
• Data de Publicação: 2005
• Outros Autores: Ferreira, J. A., Ribeiro, E., Rebouta, L., Lanceros-Méndez, S., Mendes, J., Alves, E., Goudeau, Ph., Rivière, J. P., Ribeiro, A. Fernando, Moutinho, Ivo, Pischow, K., Rijk, J.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/1822/3170
• topic: Titanium nitride; Structural properties; Sputtering; Resistivity; nitrides; Science & Technology

This paper reports on the preparation of TiNx thin films by d.c. reactive magnetron sputtering. The coating thickness ranged from 1.7 to 4.2 Am and the nitrogen content varied between 0 and 55 at.%. X-Ray diffraction showed the development of the hexagonal a-Ti phase, with strong [002] orientation for low nitrogen contents, where the N atoms fit into octahedral sites in the Ti lattice as the amount of nitrogen is increased. For nitrogen contents of 20 and 30 at.%, the q-Ti2N phase appears with [200] orientation. With further increasing the nitrogen content, the y-TiN phase becomes dominant. The electrical resistivity of the different compositions reproduces this phase behavior. The hardness of the samples varied from approximately 8 GPa for pure titanium up to 27 GPa for a nitrogen content of 30 at.%, followed by a slight decrease at the highest contents. A similar increase of stresses with nitrogen is observed. Structure and composition with the consequent changes in crystalline phases and the lattice distortion were found to be crucial in the evolution of the mechanical properties.