Influence of annealing conditions on formation of regular lattices of voids and Ge quantum dots in amorphous alumina matrix

• Autor(a) principal: Pinto, S. R. C.
• Data de Publicação: 2012
• Outros Autores: Buljan, Maja, Marques, L., Martín-Sánchez, J., Chahboun, A., Barradas, N. P., Alves, E., Bernstorff, S., Ramos, Marta M. D., Gomes, M. J. M.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/1822/21042
• topic: Science & Technology

In this work, the influence of air pressure during the annealing of Ge quantum dot (QD) lattices embedded in an amorphous Al2O3 matrix on the structural, morphological and compositional properties of the film is studied. The formation of a regularly ordered void lattice after performing a thermal annealing process is explored. Our results show that both the Ge desorption from the film and the regular ordering of the QDs are very sensitive to the annealing parameters. The conditions for the formation of a void lattice, a crystalline Ge QD lattice and a disordered QD lattice are presented. The observed effects are explained in terms of oxygen interaction with the Ge present in the film.