An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition
Autor(a) principal: | |
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Data de Publicação: | 2012 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | https://doi.org/10.1016/j.apsusc.2011.10.079 |
Resumo: | C. A. A. Ghumman gratefully thanks the Portuguese Foundation for Science and Technology – Fundação para a Ciência e a Tecnologia (Grant No. SFRH/BD/44558/2008) for the financial support of this research. |
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An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium depositionElectronegativityIII-V semiconductorsNeutral cesium depositionSecondary ion yield enhancementTOF-SIMSWork functionSurfaces, Coatings and FilmsC. A. A. Ghumman gratefully thanks the Portuguese Foundation for Science and Technology – Fundação para a Ciência e a Tecnologia (Grant No. SFRH/BD/44558/2008) for the financial support of this research.A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga + bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P - emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.CeFITec – Centro de Física e Investigação TecnológicaDF – Departamento de FísicaRUNGhumman, C. A. A.Moutinho, A. M. C.Santos, A.Teodoro, O. M. N. D.Tolstogouzov, A.2019-07-29T22:28:16Z2012-01-152012-01-15T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article8application/pdfhttps://doi.org/10.1016/j.apsusc.2011.10.079eng0169-4332PURE: 6475511http://www.scopus.com/inward/record.url?scp=84855541822&partnerID=8YFLogxKhttps://doi.org/10.1016/j.apsusc.2011.10.079info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:34:57Zoai:run.unl.pt:10362/76908Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:35:42.119042Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition |
title |
An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition |
spellingShingle |
An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition Ghumman, C. A. A. Electronegativity III-V semiconductors Neutral cesium deposition Secondary ion yield enhancement TOF-SIMS Work function Surfaces, Coatings and Films |
title_short |
An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition |
title_full |
An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition |
title_fullStr |
An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition |
title_full_unstemmed |
An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition |
title_sort |
An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition |
author |
Ghumman, C. A. A. |
author_facet |
Ghumman, C. A. A. Moutinho, A. M. C. Santos, A. Teodoro, O. M. N. D. Tolstogouzov, A. |
author_role |
author |
author2 |
Moutinho, A. M. C. Santos, A. Teodoro, O. M. N. D. Tolstogouzov, A. |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
CeFITec – Centro de Física e Investigação Tecnológica DF – Departamento de Física RUN |
dc.contributor.author.fl_str_mv |
Ghumman, C. A. A. Moutinho, A. M. C. Santos, A. Teodoro, O. M. N. D. Tolstogouzov, A. |
dc.subject.por.fl_str_mv |
Electronegativity III-V semiconductors Neutral cesium deposition Secondary ion yield enhancement TOF-SIMS Work function Surfaces, Coatings and Films |
topic |
Electronegativity III-V semiconductors Neutral cesium deposition Secondary ion yield enhancement TOF-SIMS Work function Surfaces, Coatings and Films |
description |
C. A. A. Ghumman gratefully thanks the Portuguese Foundation for Science and Technology – Fundação para a Ciência e a Tecnologia (Grant No. SFRH/BD/44558/2008) for the financial support of this research. |
publishDate |
2012 |
dc.date.none.fl_str_mv |
2012-01-15 2012-01-15T00:00:00Z 2019-07-29T22:28:16Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
https://doi.org/10.1016/j.apsusc.2011.10.079 |
url |
https://doi.org/10.1016/j.apsusc.2011.10.079 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0169-4332 PURE: 6475511 http://www.scopus.com/inward/record.url?scp=84855541822&partnerID=8YFLogxK https://doi.org/10.1016/j.apsusc.2011.10.079 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
8 application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799137977652215808 |