Oxide transistors produced by Combustion Synthesis: Influence of the PVP on the properties of the insulator
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Tipo de documento: | Dissertação |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10362/42277 |
Resumo: | Solution processing of amorphous metal oxides has been used as an option to implement in flexible electronics, allowing to reduce the associated costs, when compared with vacuum processes. Recent research has been more focused on the semiconductor layer; however, the dielectric layer is equally important since its responsible for the stability and electric performance of the device. This work aims to evaluate hybrid dielectric thin films, using aluminium oxide and different types of polyvinylpyrrolidone (PVP), both obtained by solution process using solution combustion synthesis (SCS), to study the influence of the amount of organic material used in the insulator layer, as well as to study the influence of the hybrid insulator obtained in oxide thin film transistors (TFTs) using indium-gallium-zinc-oxide (IGZO) and zinc-tin-oxide (ZTO) as semiconductor layer. The insulator layer was obtained using aluminium nitrate nonahydrate and polyvinylpyrrolidone (PVP) with different molecular weights (10000 and 40000) and different percentages as precursor solutions, using urea as fuel and 2-methoxyethanol as solvent. The best hybrid dielectric was obtained with 0.8 % PVP 40000 (weight per volume), showing a breakdown voltage of 1.1 MV/cm, low density leakage current of 9.6 × 10-5 A/cm2, capacitance per area of 123 nF/cm2, thickness of 49.35 nm, annealed at 200 °C for 30 minutes. Moreover, the roughness study obtained using atomic force microscopy showed highly smooth surface, resulting in improvement dielectric-semiconductor interface, while still maintaining an amorphous nature. These characteristics allowed this hybrid dielectric, lead to enhanced TFTs electrical properties. The best performing thin films were applied in IGZO TFTs as hybrid dielectrics. The optimized TFTs show good reproducibility with an average mobility of 40.24 ± 1.1 cm2∙V-1∙s-1, subthreshold slope of 0.169 ± 0.012 V∙dec-1, a turn-on voltage of 0.078 ± 0.004 V and a low operating voltage (maximum 2 V). |
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Oxide transistors produced by Combustion Synthesis: Influence of the PVP on the properties of the insulatoraluminium oxidepolyvinylpyrrolidonehybrid dielectricssolution combustion synthesissolution TFTslow operating voltageDomínio/Área Científica::Engenharia e Tecnologia::Engenharia dos MateriaisSolution processing of amorphous metal oxides has been used as an option to implement in flexible electronics, allowing to reduce the associated costs, when compared with vacuum processes. Recent research has been more focused on the semiconductor layer; however, the dielectric layer is equally important since its responsible for the stability and electric performance of the device. This work aims to evaluate hybrid dielectric thin films, using aluminium oxide and different types of polyvinylpyrrolidone (PVP), both obtained by solution process using solution combustion synthesis (SCS), to study the influence of the amount of organic material used in the insulator layer, as well as to study the influence of the hybrid insulator obtained in oxide thin film transistors (TFTs) using indium-gallium-zinc-oxide (IGZO) and zinc-tin-oxide (ZTO) as semiconductor layer. The insulator layer was obtained using aluminium nitrate nonahydrate and polyvinylpyrrolidone (PVP) with different molecular weights (10000 and 40000) and different percentages as precursor solutions, using urea as fuel and 2-methoxyethanol as solvent. The best hybrid dielectric was obtained with 0.8 % PVP 40000 (weight per volume), showing a breakdown voltage of 1.1 MV/cm, low density leakage current of 9.6 × 10-5 A/cm2, capacitance per area of 123 nF/cm2, thickness of 49.35 nm, annealed at 200 °C for 30 minutes. Moreover, the roughness study obtained using atomic force microscopy showed highly smooth surface, resulting in improvement dielectric-semiconductor interface, while still maintaining an amorphous nature. These characteristics allowed this hybrid dielectric, lead to enhanced TFTs electrical properties. The best performing thin films were applied in IGZO TFTs as hybrid dielectrics. The optimized TFTs show good reproducibility with an average mobility of 40.24 ± 1.1 cm2∙V-1∙s-1, subthreshold slope of 0.169 ± 0.012 V∙dec-1, a turn-on voltage of 0.078 ± 0.004 V and a low operating voltage (maximum 2 V).Branquinho, RitaRUNTrigo, Pedro Gil Dias2018-07-23T08:09:13Z2017-1120172017-11-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisapplication/pdfhttp://hdl.handle.net/10362/42277TID:202315983enginfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:22:43Zoai:run.unl.pt:10362/42277Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:31:26.585725Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Oxide transistors produced by Combustion Synthesis: Influence of the PVP on the properties of the insulator |
title |
Oxide transistors produced by Combustion Synthesis: Influence of the PVP on the properties of the insulator |
spellingShingle |
Oxide transistors produced by Combustion Synthesis: Influence of the PVP on the properties of the insulator Trigo, Pedro Gil Dias aluminium oxide polyvinylpyrrolidone hybrid dielectrics solution combustion synthesis solution TFTs low operating voltage Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais |
title_short |
Oxide transistors produced by Combustion Synthesis: Influence of the PVP on the properties of the insulator |
title_full |
Oxide transistors produced by Combustion Synthesis: Influence of the PVP on the properties of the insulator |
title_fullStr |
Oxide transistors produced by Combustion Synthesis: Influence of the PVP on the properties of the insulator |
title_full_unstemmed |
Oxide transistors produced by Combustion Synthesis: Influence of the PVP on the properties of the insulator |
title_sort |
Oxide transistors produced by Combustion Synthesis: Influence of the PVP on the properties of the insulator |
author |
Trigo, Pedro Gil Dias |
author_facet |
Trigo, Pedro Gil Dias |
author_role |
author |
dc.contributor.none.fl_str_mv |
Branquinho, Rita RUN |
dc.contributor.author.fl_str_mv |
Trigo, Pedro Gil Dias |
dc.subject.por.fl_str_mv |
aluminium oxide polyvinylpyrrolidone hybrid dielectrics solution combustion synthesis solution TFTs low operating voltage Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais |
topic |
aluminium oxide polyvinylpyrrolidone hybrid dielectrics solution combustion synthesis solution TFTs low operating voltage Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais |
description |
Solution processing of amorphous metal oxides has been used as an option to implement in flexible electronics, allowing to reduce the associated costs, when compared with vacuum processes. Recent research has been more focused on the semiconductor layer; however, the dielectric layer is equally important since its responsible for the stability and electric performance of the device. This work aims to evaluate hybrid dielectric thin films, using aluminium oxide and different types of polyvinylpyrrolidone (PVP), both obtained by solution process using solution combustion synthesis (SCS), to study the influence of the amount of organic material used in the insulator layer, as well as to study the influence of the hybrid insulator obtained in oxide thin film transistors (TFTs) using indium-gallium-zinc-oxide (IGZO) and zinc-tin-oxide (ZTO) as semiconductor layer. The insulator layer was obtained using aluminium nitrate nonahydrate and polyvinylpyrrolidone (PVP) with different molecular weights (10000 and 40000) and different percentages as precursor solutions, using urea as fuel and 2-methoxyethanol as solvent. The best hybrid dielectric was obtained with 0.8 % PVP 40000 (weight per volume), showing a breakdown voltage of 1.1 MV/cm, low density leakage current of 9.6 × 10-5 A/cm2, capacitance per area of 123 nF/cm2, thickness of 49.35 nm, annealed at 200 °C for 30 minutes. Moreover, the roughness study obtained using atomic force microscopy showed highly smooth surface, resulting in improvement dielectric-semiconductor interface, while still maintaining an amorphous nature. These characteristics allowed this hybrid dielectric, lead to enhanced TFTs electrical properties. The best performing thin films were applied in IGZO TFTs as hybrid dielectrics. The optimized TFTs show good reproducibility with an average mobility of 40.24 ± 1.1 cm2∙V-1∙s-1, subthreshold slope of 0.169 ± 0.012 V∙dec-1, a turn-on voltage of 0.078 ± 0.004 V and a low operating voltage (maximum 2 V). |
publishDate |
2017 |
dc.date.none.fl_str_mv |
2017-11 2017 2017-11-01T00:00:00Z 2018-07-23T08:09:13Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10362/42277 TID:202315983 |
url |
http://hdl.handle.net/10362/42277 |
identifier_str_mv |
TID:202315983 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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