Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | https://hdl.handle.net/1822/81350 |
Resumo: | Hexagonal boron nitride (h-BN) is a critical 2D insulator used as a substrate, gate dielectric, or encapsulation layer for graphene and other 2D materials and their van der Waals heterostructures. It is also promising as an active layer in single-photon emitters and other photonic devices. With the chemical formula H3N-BH3, ammonia borane is the most attractive precursor for up-scalable growth of large-area h-BN, using chemical vapor deposition given its stoichiometric B:N ratio, high stability under ambient conditions, nontoxicity, and high solubility in common solvents. Here, the synthesis of large-area (100 × 150 mm2) crystalline hexagonal boron nitride layers by thermal activation and decomposition of the precursor ammonia borane is presented. We describe two different reaction pathways for h-BN synthesis, providing evidence for dissimilarities in the sublimation kinetics of ammonia borane and how these differences critically influence the growth of h-BN. This understanding helps us accelerate h-BN production, reuse precursors, and reduce machine runtime, paving the way for upscalability. Moreover, our work provides a consistent unified view explaining the diverse deposition conditions reported in the literature for h-BN grown by CVD using ammonia borane as a precursor. |
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Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitrideEngenharia e Tecnologia::NanotecnologiaScience & TechnologyHexagonal boron nitride (h-BN) is a critical 2D insulator used as a substrate, gate dielectric, or encapsulation layer for graphene and other 2D materials and their van der Waals heterostructures. It is also promising as an active layer in single-photon emitters and other photonic devices. With the chemical formula H3N-BH3, ammonia borane is the most attractive precursor for up-scalable growth of large-area h-BN, using chemical vapor deposition given its stoichiometric B:N ratio, high stability under ambient conditions, nontoxicity, and high solubility in common solvents. Here, the synthesis of large-area (100 × 150 mm2) crystalline hexagonal boron nitride layers by thermal activation and decomposition of the precursor ammonia borane is presented. We describe two different reaction pathways for h-BN synthesis, providing evidence for dissimilarities in the sublimation kinetics of ammonia borane and how these differences critically influence the growth of h-BN. This understanding helps us accelerate h-BN production, reuse precursors, and reduce machine runtime, paving the way for upscalability. Moreover, our work provides a consistent unified view explaining the diverse deposition conditions reported in the literature for h-BN grown by CVD using ammonia borane as a precursor.This work was supported by National Funds through the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding No. UIDB/04650/2020 and Project Nos. PTDC/FIS-NAN/3668/2014 (LA2D) and PTDC/FIS-MAC/28114/2017 (POCI-01-0145-FEDER-028114) (GRAPHSENS).American Institute of PhysicsUniversidade do MinhoSompalle, BalajiLiao, Chun-DaWei, BinCerqueira, Maria de FátimaNicoara, NicoletaWang, ZhongchangSadewasser, SaschaAlpuim, P.2021-07-0110000-01-01T00:00:00Z2021-07-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/81350engSompalle, B., Liao, C.-D., Wei, B., Cerqueira, M. de F., Nicoara, N., Wang, Z., … Alpuim, P. (2021, July). Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride. Journal of Vacuum Science & Technology A. American Vacuum Society. http://doi.org/10.1116/6.00009870734-210110.1116/6.0000987https://avs.scitation.org/doi/10.1116/6.0000987info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:29:54Zoai:repositorium.sdum.uminho.pt:1822/81350Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:25:00.285519Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride |
title |
Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride |
spellingShingle |
Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride Sompalle, Balaji Engenharia e Tecnologia::Nanotecnologia Science & Technology |
title_short |
Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride |
title_full |
Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride |
title_fullStr |
Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride |
title_full_unstemmed |
Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride |
title_sort |
Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride |
author |
Sompalle, Balaji |
author_facet |
Sompalle, Balaji Liao, Chun-Da Wei, Bin Cerqueira, Maria de Fátima Nicoara, Nicoleta Wang, Zhongchang Sadewasser, Sascha Alpuim, P. |
author_role |
author |
author2 |
Liao, Chun-Da Wei, Bin Cerqueira, Maria de Fátima Nicoara, Nicoleta Wang, Zhongchang Sadewasser, Sascha Alpuim, P. |
author2_role |
author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Sompalle, Balaji Liao, Chun-Da Wei, Bin Cerqueira, Maria de Fátima Nicoara, Nicoleta Wang, Zhongchang Sadewasser, Sascha Alpuim, P. |
dc.subject.por.fl_str_mv |
Engenharia e Tecnologia::Nanotecnologia Science & Technology |
topic |
Engenharia e Tecnologia::Nanotecnologia Science & Technology |
description |
Hexagonal boron nitride (h-BN) is a critical 2D insulator used as a substrate, gate dielectric, or encapsulation layer for graphene and other 2D materials and their van der Waals heterostructures. It is also promising as an active layer in single-photon emitters and other photonic devices. With the chemical formula H3N-BH3, ammonia borane is the most attractive precursor for up-scalable growth of large-area h-BN, using chemical vapor deposition given its stoichiometric B:N ratio, high stability under ambient conditions, nontoxicity, and high solubility in common solvents. Here, the synthesis of large-area (100 × 150 mm2) crystalline hexagonal boron nitride layers by thermal activation and decomposition of the precursor ammonia borane is presented. We describe two different reaction pathways for h-BN synthesis, providing evidence for dissimilarities in the sublimation kinetics of ammonia borane and how these differences critically influence the growth of h-BN. This understanding helps us accelerate h-BN production, reuse precursors, and reduce machine runtime, paving the way for upscalability. Moreover, our work provides a consistent unified view explaining the diverse deposition conditions reported in the literature for h-BN grown by CVD using ammonia borane as a precursor. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
10000-01-01T00:00:00Z 2021-07-01 2021-07-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
https://hdl.handle.net/1822/81350 |
url |
https://hdl.handle.net/1822/81350 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Sompalle, B., Liao, C.-D., Wei, B., Cerqueira, M. de F., Nicoara, N., Wang, Z., … Alpuim, P. (2021, July). Role of sublimation kinetics of ammonia borane in chemical vapor deposition of uniform, large-area hexagonal boron nitride. Journal of Vacuum Science & Technology A. American Vacuum Society. http://doi.org/10.1116/6.0000987 0734-2101 10.1116/6.0000987 https://avs.scitation.org/doi/10.1116/6.0000987 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
American Institute of Physics |
publisher.none.fl_str_mv |
American Institute of Physics |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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