Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer

Detalhes bibliográficos
Autor(a) principal: Silva, J. P. B.
Data de Publicação: 2017
Outros Autores: Faita, F. L., Kamakshi, Koppole, Sekhar, K. C., Moreira, J. Agostinho, Almeida, A., Pereira, Mário, Pasa, A. A., Gomes, M. J. M.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: https://hdl.handle.net/1822/47139
Resumo: An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/ BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/ HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc=140°C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.
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spelling Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layerScience & TechnologyAn enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/ BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/ HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc=140°C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.This work was supported by: (i) Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding UID/FIS/04650/2013; (ii) European COST Action MP1308-TO-BE; (iii) Project Norte- 070124-FEDER-000070 Nanomateriais Multifuncionais. The authors J.P.B.S., K.K. and F.L.F. are grateful for financial support through the FCT Grants SFRH/BPD/92896/2013, SFRH/BPD/87215/2012 and CNPq/PDE 249791/2013-7, respectively. The authors thank the Central Laboratory of Electron Microscopy (LCME – UFSC) and the Laboratory of X-rays Diffraction (LDRX - UFSC) by facilities. The authors would also like to thank Engineer José Santos for technical support at Thin Films Laboratoryinfo:eu-repo/semantics/publishedVersionNature Publishing GroupUniversidade do MinhoSilva, J. P. B.Faita, F. L.Kamakshi, KoppoleSekhar, K. C.Moreira, J. AgostinhoAlmeida, A.Pereira, MárioPasa, A. A.Gomes, M. J. M.2017-04-112017-04-11T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/47139eng2045-232210.1038/srep4635028397865info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:20:13Zoai:repositorium.sdum.uminho.pt:1822/47139Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:13:18.435551Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer
title Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer
spellingShingle Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer
Silva, J. P. B.
Science & Technology
title_short Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer
title_full Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer
title_fullStr Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer
title_full_unstemmed Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer
title_sort Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer
author Silva, J. P. B.
author_facet Silva, J. P. B.
Faita, F. L.
Kamakshi, Koppole
Sekhar, K. C.
Moreira, J. Agostinho
Almeida, A.
Pereira, Mário
Pasa, A. A.
Gomes, M. J. M.
author_role author
author2 Faita, F. L.
Kamakshi, Koppole
Sekhar, K. C.
Moreira, J. Agostinho
Almeida, A.
Pereira, Mário
Pasa, A. A.
Gomes, M. J. M.
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Silva, J. P. B.
Faita, F. L.
Kamakshi, Koppole
Sekhar, K. C.
Moreira, J. Agostinho
Almeida, A.
Pereira, Mário
Pasa, A. A.
Gomes, M. J. M.
dc.subject.por.fl_str_mv Science & Technology
topic Science & Technology
description An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/ BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/ HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc=140°C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.
publishDate 2017
dc.date.none.fl_str_mv 2017-04-11
2017-04-11T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://hdl.handle.net/1822/47139
url https://hdl.handle.net/1822/47139
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2045-2322
10.1038/srep46350
28397865
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Nature Publishing Group
publisher.none.fl_str_mv Nature Publishing Group
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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