Resistive switching in nanostructured thin films

Detalhes bibliográficos
Autor(a) principal: Silva, Hugo G.
Data de Publicação: 2009
Outros Autores: Gomes, Henrique L., Pogorelov, Y. G., Stallinga, Peter, De Leeuw, Dago M., Araújo, J. P., Sousa, J. B., Meskers, S. C. J., Kakazei, G. N., Cardoso, S., Freitas, P. P.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.1/3319
Resumo: Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.
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spelling Resistive switching in nanostructured thin filmsPlanar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.American Institute of Physics (AIP)SapientiaSilva, Hugo G.Gomes, Henrique L.Pogorelov, Y. G.Stallinga, PeterDe Leeuw, Dago M.Araújo, J. P.Sousa, J. B.Meskers, S. C. J.Kakazei, G. N.Cardoso, S.Freitas, P. P.2014-01-09T11:07:03Z20092014-01-02T19:28:52Z2009-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/3319engSilva, H. G.; Gomes, H. L.; Pogorelov, Yu. G.; Stallinga, P.; De Leeuw, D. M.; Araujo, J. P.; Sousa, J. B.; Meskers, S. C. J.; Kakazei, G. N.; Cardoso, S.; Freitas, P. P. Resistive switching in nanostructured thin films, Applied Physics Letters, 94, 20, 202107-202107, 2009.0003-6951AUT: HGO00803; PJO01566;http://dx.doi.org/10.1063/1.3134484info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-24T10:14:19Zoai:sapientia.ualg.pt:10400.1/3319Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:56:53.376901Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Resistive switching in nanostructured thin films
title Resistive switching in nanostructured thin films
spellingShingle Resistive switching in nanostructured thin films
Silva, Hugo G.
title_short Resistive switching in nanostructured thin films
title_full Resistive switching in nanostructured thin films
title_fullStr Resistive switching in nanostructured thin films
title_full_unstemmed Resistive switching in nanostructured thin films
title_sort Resistive switching in nanostructured thin films
author Silva, Hugo G.
author_facet Silva, Hugo G.
Gomes, Henrique L.
Pogorelov, Y. G.
Stallinga, Peter
De Leeuw, Dago M.
Araújo, J. P.
Sousa, J. B.
Meskers, S. C. J.
Kakazei, G. N.
Cardoso, S.
Freitas, P. P.
author_role author
author2 Gomes, Henrique L.
Pogorelov, Y. G.
Stallinga, Peter
De Leeuw, Dago M.
Araújo, J. P.
Sousa, J. B.
Meskers, S. C. J.
Kakazei, G. N.
Cardoso, S.
Freitas, P. P.
author2_role author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Sapientia
dc.contributor.author.fl_str_mv Silva, Hugo G.
Gomes, Henrique L.
Pogorelov, Y. G.
Stallinga, Peter
De Leeuw, Dago M.
Araújo, J. P.
Sousa, J. B.
Meskers, S. C. J.
Kakazei, G. N.
Cardoso, S.
Freitas, P. P.
description Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.
publishDate 2009
dc.date.none.fl_str_mv 2009
2009-01-01T00:00:00Z
2014-01-09T11:07:03Z
2014-01-02T19:28:52Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.1/3319
url http://hdl.handle.net/10400.1/3319
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Silva, H. G.; Gomes, H. L.; Pogorelov, Yu. G.; Stallinga, P.; De Leeuw, D. M.; Araujo, J. P.; Sousa, J. B.; Meskers, S. C. J.; Kakazei, G. N.; Cardoso, S.; Freitas, P. P. Resistive switching in nanostructured thin films, Applied Physics Letters, 94, 20, 202107-202107, 2009.
0003-6951
AUT: HGO00803; PJO01566;
http://dx.doi.org/10.1063/1.3134484
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics (AIP)
publisher.none.fl_str_mv American Institute of Physics (AIP)
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
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collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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