Resistive switching in nanostructured thin films
Autor(a) principal: | |
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Data de Publicação: | 2009 |
Outros Autores: | , , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10400.1/3319 |
Resumo: | Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction. |
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Resistive switching in nanostructured thin filmsPlanar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.American Institute of Physics (AIP)SapientiaSilva, Hugo G.Gomes, Henrique L.Pogorelov, Y. G.Stallinga, PeterDe Leeuw, Dago M.Araújo, J. P.Sousa, J. B.Meskers, S. C. J.Kakazei, G. N.Cardoso, S.Freitas, P. P.2014-01-09T11:07:03Z20092014-01-02T19:28:52Z2009-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/3319engSilva, H. G.; Gomes, H. L.; Pogorelov, Yu. G.; Stallinga, P.; De Leeuw, D. M.; Araujo, J. P.; Sousa, J. B.; Meskers, S. C. J.; Kakazei, G. N.; Cardoso, S.; Freitas, P. P. Resistive switching in nanostructured thin films, Applied Physics Letters, 94, 20, 202107-202107, 2009.0003-6951AUT: HGO00803; PJO01566;http://dx.doi.org/10.1063/1.3134484info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-24T10:14:19Zoai:sapientia.ualg.pt:10400.1/3319Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:56:53.376901Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Resistive switching in nanostructured thin films |
title |
Resistive switching in nanostructured thin films |
spellingShingle |
Resistive switching in nanostructured thin films Silva, Hugo G. |
title_short |
Resistive switching in nanostructured thin films |
title_full |
Resistive switching in nanostructured thin films |
title_fullStr |
Resistive switching in nanostructured thin films |
title_full_unstemmed |
Resistive switching in nanostructured thin films |
title_sort |
Resistive switching in nanostructured thin films |
author |
Silva, Hugo G. |
author_facet |
Silva, Hugo G. Gomes, Henrique L. Pogorelov, Y. G. Stallinga, Peter De Leeuw, Dago M. Araújo, J. P. Sousa, J. B. Meskers, S. C. J. Kakazei, G. N. Cardoso, S. Freitas, P. P. |
author_role |
author |
author2 |
Gomes, Henrique L. Pogorelov, Y. G. Stallinga, Peter De Leeuw, Dago M. Araújo, J. P. Sousa, J. B. Meskers, S. C. J. Kakazei, G. N. Cardoso, S. Freitas, P. P. |
author2_role |
author author author author author author author author author author |
dc.contributor.none.fl_str_mv |
Sapientia |
dc.contributor.author.fl_str_mv |
Silva, Hugo G. Gomes, Henrique L. Pogorelov, Y. G. Stallinga, Peter De Leeuw, Dago M. Araújo, J. P. Sousa, J. B. Meskers, S. C. J. Kakazei, G. N. Cardoso, S. Freitas, P. P. |
description |
Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction. |
publishDate |
2009 |
dc.date.none.fl_str_mv |
2009 2009-01-01T00:00:00Z 2014-01-09T11:07:03Z 2014-01-02T19:28:52Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10400.1/3319 |
url |
http://hdl.handle.net/10400.1/3319 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Silva, H. G.; Gomes, H. L.; Pogorelov, Yu. G.; Stallinga, P.; De Leeuw, D. M.; Araujo, J. P.; Sousa, J. B.; Meskers, S. C. J.; Kakazei, G. N.; Cardoso, S.; Freitas, P. P. Resistive switching in nanostructured thin films, Applied Physics Letters, 94, 20, 202107-202107, 2009. 0003-6951 AUT: HGO00803; PJO01566; http://dx.doi.org/10.1063/1.3134484 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
American Institute of Physics (AIP) |
publisher.none.fl_str_mv |
American Institute of Physics (AIP) |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799133177973833728 |