Resistive switching behavior in ZnO:Ca thin films deposited by a pulsed laser deposition technique

Detalhes bibliográficos
Autor(a) principal: Mejri, I. H.
Data de Publicação: 2023
Outros Autores: Omri, K., Ghiloufi, I., Silva, José Pedro Basto, Gomes, M. J. M., El Mir, L.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: https://hdl.handle.net/1822/87425
Resumo: Calcium-doped ZnO (CZO) nanopowders were synthesized using the sol–gel method. The structural characteristics were investigated by X-ray diffraction (XRD) and the analysis reveals that our samples are crystalized in a wurtzite hexagonal structure. The morphological properties and the chemical composition of the nanoparticles were studied by transmission electron microscopy (TEM), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDX). The obtained powders are stoichiometric with crystallites in a nanometric scale aggregated in micrometric particles. Then, pulsed laser deposition (PLD) technique was used to grow Ca-doped ZnO thin films with different doping concentrations (1, 3, and 5%), on p-type Si substrates. The Ca doping effect on the electrical properties of the CZO films was investigated by current–voltage characteristics. A resistive switching (RS) effect was observed in the ITO/ZnO:Ca/Au structures. The RS behavior is dependent on the Ca doping concentration. The charge transport mechanisms of the devices were studied. In the positive bias voltage region, the transport is dominated by Ohmic and space-charge limited conduction mechanisms under low and high electric fields, respectively.
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spelling Resistive switching behavior in ZnO:Ca thin films deposited by a pulsed laser deposition techniqueCa-doped ZnO nanoparticlesZnOCa thin filmsPulsed laser depositionResistive switchingSol-gelZnO:Ca thin filmsCiências Naturais::Ciências FísicasScience & TechnologyCalcium-doped ZnO (CZO) nanopowders were synthesized using the sol–gel method. The structural characteristics were investigated by X-ray diffraction (XRD) and the analysis reveals that our samples are crystalized in a wurtzite hexagonal structure. The morphological properties and the chemical composition of the nanoparticles were studied by transmission electron microscopy (TEM), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDX). The obtained powders are stoichiometric with crystallites in a nanometric scale aggregated in micrometric particles. Then, pulsed laser deposition (PLD) technique was used to grow Ca-doped ZnO thin films with different doping concentrations (1, 3, and 5%), on p-type Si substrates. The Ca doping effect on the electrical properties of the CZO films was investigated by current–voltage characteristics. A resistive switching (RS) effect was observed in the ITO/ZnO:Ca/Au structures. The RS behavior is dependent on the Ca doping concentration. The charge transport mechanisms of the devices were studied. In the positive bias voltage region, the transport is dominated by Ohmic and space-charge limited conduction mechanisms under low and high electric fields, respectively.This work was funded by the National Plan for Sciences, Technology, and innovation (MAARIFAH) – King Abdulaziz City for Sciences and Technology—Kingdom of Saudi Arabia, award number: 13-NAN517-08. This work was supported by the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding Contract UIDB/04650/2020.SpringerUniversidade do MinhoMejri, I. H.Omri, K.Ghiloufi, I.Silva, José Pedro BastoGomes, M. J. M.El Mir, L.20232023-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/87425engMejri, I. H., Omri, K., Ghiloufi, I., Silva, J. P. B., Gomes, M. J. M., & El Mir, L. (2023, February 24). Resistive switching behavior in ZnO:Ca thin films deposited by a pulsed laser deposition technique. Applied Physics A. Springer Science and Business Media LLC. http://doi.org/10.1007/s00339-023-06508-10947-83961432-063010.1007/s00339-023-06508-1https://link.springer.com/article/10.1007/s00339-023-06508-1info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-05-11T04:21:13Zoai:repositorium.sdum.uminho.pt:1822/87425Portal AgregadorONGhttps://www.rcaap.pt/oai/openairemluisa.alvim@gmail.comopendoar:71602024-05-11T04:21:13Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Resistive switching behavior in ZnO:Ca thin films deposited by a pulsed laser deposition technique
title Resistive switching behavior in ZnO:Ca thin films deposited by a pulsed laser deposition technique
spellingShingle Resistive switching behavior in ZnO:Ca thin films deposited by a pulsed laser deposition technique
Mejri, I. H.
Ca-doped ZnO nanoparticles
ZnO
Ca thin films
Pulsed laser deposition
Resistive switching
Sol-gel
ZnO:Ca thin films
Ciências Naturais::Ciências Físicas
Science & Technology
title_short Resistive switching behavior in ZnO:Ca thin films deposited by a pulsed laser deposition technique
title_full Resistive switching behavior in ZnO:Ca thin films deposited by a pulsed laser deposition technique
title_fullStr Resistive switching behavior in ZnO:Ca thin films deposited by a pulsed laser deposition technique
title_full_unstemmed Resistive switching behavior in ZnO:Ca thin films deposited by a pulsed laser deposition technique
title_sort Resistive switching behavior in ZnO:Ca thin films deposited by a pulsed laser deposition technique
author Mejri, I. H.
author_facet Mejri, I. H.
Omri, K.
Ghiloufi, I.
Silva, José Pedro Basto
Gomes, M. J. M.
El Mir, L.
author_role author
author2 Omri, K.
Ghiloufi, I.
Silva, José Pedro Basto
Gomes, M. J. M.
El Mir, L.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Mejri, I. H.
Omri, K.
Ghiloufi, I.
Silva, José Pedro Basto
Gomes, M. J. M.
El Mir, L.
dc.subject.por.fl_str_mv Ca-doped ZnO nanoparticles
ZnO
Ca thin films
Pulsed laser deposition
Resistive switching
Sol-gel
ZnO:Ca thin films
Ciências Naturais::Ciências Físicas
Science & Technology
topic Ca-doped ZnO nanoparticles
ZnO
Ca thin films
Pulsed laser deposition
Resistive switching
Sol-gel
ZnO:Ca thin films
Ciências Naturais::Ciências Físicas
Science & Technology
description Calcium-doped ZnO (CZO) nanopowders were synthesized using the sol–gel method. The structural characteristics were investigated by X-ray diffraction (XRD) and the analysis reveals that our samples are crystalized in a wurtzite hexagonal structure. The morphological properties and the chemical composition of the nanoparticles were studied by transmission electron microscopy (TEM), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDX). The obtained powders are stoichiometric with crystallites in a nanometric scale aggregated in micrometric particles. Then, pulsed laser deposition (PLD) technique was used to grow Ca-doped ZnO thin films with different doping concentrations (1, 3, and 5%), on p-type Si substrates. The Ca doping effect on the electrical properties of the CZO films was investigated by current–voltage characteristics. A resistive switching (RS) effect was observed in the ITO/ZnO:Ca/Au structures. The RS behavior is dependent on the Ca doping concentration. The charge transport mechanisms of the devices were studied. In the positive bias voltage region, the transport is dominated by Ohmic and space-charge limited conduction mechanisms under low and high electric fields, respectively.
publishDate 2023
dc.date.none.fl_str_mv 2023
2023-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://hdl.handle.net/1822/87425
url https://hdl.handle.net/1822/87425
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Mejri, I. H., Omri, K., Ghiloufi, I., Silva, J. P. B., Gomes, M. J. M., & El Mir, L. (2023, February 24). Resistive switching behavior in ZnO:Ca thin films deposited by a pulsed laser deposition technique. Applied Physics A. Springer Science and Business Media LLC. http://doi.org/10.1007/s00339-023-06508-1
0947-8396
1432-0630
10.1007/s00339-023-06508-1
https://link.springer.com/article/10.1007/s00339-023-06508-1
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Springer
publisher.none.fl_str_mv Springer
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv mluisa.alvim@gmail.com
_version_ 1817544284854812672

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