Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
Autor(a) principal: | |
---|---|
Data de Publicação: | 2000 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10773/6087 |
Resumo: | A comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a deep-level 1 eV below the p-SiC conduction band, is probably responsible for a tunneling- assisted current at low forward voltages, due to a high concentration of interface defects. |
id |
RCAP_ae46b0a838e8d1c09f528a1e87f2c897 |
---|---|
oai_identifier_str |
oai:ria.ua.pt:10773/6087 |
network_acronym_str |
RCAP |
network_name_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository_id_str |
7160 |
spelling |
Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodesHomojunction and heterojunction diodeselectroluminescencedeep levelA comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a deep-level 1 eV below the p-SiC conduction band, is probably responsible for a tunneling- assisted current at low forward voltages, due to a high concentration of interface defects.Trans Tech Publ Ltd2012-02-09T12:13:40Z2000-01-01T00:00:00Z2000info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/6087eng0255-547610.4028/www.scientific.net/MSF.338-342.1651Vacas, J.Lahrèche, H.Monteiro, T.Caspar, C.Pereira, E.Brylinski, C.Di Forte-Poisson, M.A.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:08:06Zoai:ria.ua.pt:10773/6087Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T02:43:26.617834Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes |
title |
Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes |
spellingShingle |
Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes Vacas, J. Homojunction and heterojunction diodes electroluminescence deep level |
title_short |
Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes |
title_full |
Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes |
title_fullStr |
Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes |
title_full_unstemmed |
Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes |
title_sort |
Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes |
author |
Vacas, J. |
author_facet |
Vacas, J. Lahrèche, H. Monteiro, T. Caspar, C. Pereira, E. Brylinski, C. Di Forte-Poisson, M.A. |
author_role |
author |
author2 |
Lahrèche, H. Monteiro, T. Caspar, C. Pereira, E. Brylinski, C. Di Forte-Poisson, M.A. |
author2_role |
author author author author author author |
dc.contributor.author.fl_str_mv |
Vacas, J. Lahrèche, H. Monteiro, T. Caspar, C. Pereira, E. Brylinski, C. Di Forte-Poisson, M.A. |
dc.subject.por.fl_str_mv |
Homojunction and heterojunction diodes electroluminescence deep level |
topic |
Homojunction and heterojunction diodes electroluminescence deep level |
description |
A comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a deep-level 1 eV below the p-SiC conduction band, is probably responsible for a tunneling- assisted current at low forward voltages, due to a high concentration of interface defects. |
publishDate |
2000 |
dc.date.none.fl_str_mv |
2000-01-01T00:00:00Z 2000 2012-02-09T12:13:40Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10773/6087 |
url |
http://hdl.handle.net/10773/6087 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0255-5476 10.4028/www.scientific.net/MSF.338-342.1651 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Trans Tech Publ Ltd |
publisher.none.fl_str_mv |
Trans Tech Publ Ltd |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
|
_version_ |
1799137484220661760 |