Structure and optical properties of ZnO:V thin films with different doping concentration
Autor(a) principal: | |
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Data de Publicação: | 2009 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/1822/13627 |
Resumo: | A series of ZnO thin films doped with various vanadium concentrations were prepared on glass substrates by direct current reactive magnetron sputtering. The results of the X-ray diffraction (XRD) show that the films with doping concentration less than 10 at.% have a wurtzite structure and grow mainly along the c-axis orientation. The residual stress, estimated by fitting the XRD diffraction peaks, increases with the doping concentration and the grain size also has been calculated from the XRD results, decreases with increasing the doping concentration. The surface morphology of the ZnO:V thin films was examined by SEM. The optical constants (refractive index and extinction coefficient) and the film thickness have been obtained by fitting the transmittance. The optical band gap changed from 3.12 eV to 3.60 eV as doping concentration increased from 1.8 at.% to 13 at.% mol. All the results have been discussed in relation with doping concentration |
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Structure and optical properties of ZnO:V thin films with different doping concentrationV-doped ZnOMagnetron sputteringOptical propertiesScience & TechnologyA series of ZnO thin films doped with various vanadium concentrations were prepared on glass substrates by direct current reactive magnetron sputtering. The results of the X-ray diffraction (XRD) show that the films with doping concentration less than 10 at.% have a wurtzite structure and grow mainly along the c-axis orientation. The residual stress, estimated by fitting the XRD diffraction peaks, increases with the doping concentration and the grain size also has been calculated from the XRD results, decreases with increasing the doping concentration. The surface morphology of the ZnO:V thin films was examined by SEM. The optical constants (refractive index and extinction coefficient) and the film thickness have been obtained by fitting the transmittance. The optical band gap changed from 3.12 eV to 3.60 eV as doping concentration increased from 1.8 at.% to 13 at.% mol. All the results have been discussed in relation with doping concentrationThe authors express their thanks to the NSFC (60576016 and 10774013), 863 program (2006AA03Z0412), BNSFC (2073030), 973 Program (2003CB314707), Key program of NSFC(10434030) and FBJTU (2005SM057 and 2006XM043) and Beijing Jiao Tong University Doctor Science Creative Grants No. 48027.ElsevierUniversidade do MinhoWang Li-WeiMeng LijianTeixeira, Vasco M. P.Song ShigengXu ZhengXu Xu-Rong2009-052009-05-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/13627eng0040-609010.1016/j.tsf.2008.12.043http://www.sciencedirect.com/science/article/pii/S0040609008016209info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:28:00Zoai:repositorium.sdum.uminho.pt:1822/13627Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:22:43.241144Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Structure and optical properties of ZnO:V thin films with different doping concentration |
title |
Structure and optical properties of ZnO:V thin films with different doping concentration |
spellingShingle |
Structure and optical properties of ZnO:V thin films with different doping concentration Wang Li-Wei V-doped ZnO Magnetron sputtering Optical properties Science & Technology |
title_short |
Structure and optical properties of ZnO:V thin films with different doping concentration |
title_full |
Structure and optical properties of ZnO:V thin films with different doping concentration |
title_fullStr |
Structure and optical properties of ZnO:V thin films with different doping concentration |
title_full_unstemmed |
Structure and optical properties of ZnO:V thin films with different doping concentration |
title_sort |
Structure and optical properties of ZnO:V thin films with different doping concentration |
author |
Wang Li-Wei |
author_facet |
Wang Li-Wei Meng Lijian Teixeira, Vasco M. P. Song Shigeng Xu Zheng Xu Xu-Rong |
author_role |
author |
author2 |
Meng Lijian Teixeira, Vasco M. P. Song Shigeng Xu Zheng Xu Xu-Rong |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Wang Li-Wei Meng Lijian Teixeira, Vasco M. P. Song Shigeng Xu Zheng Xu Xu-Rong |
dc.subject.por.fl_str_mv |
V-doped ZnO Magnetron sputtering Optical properties Science & Technology |
topic |
V-doped ZnO Magnetron sputtering Optical properties Science & Technology |
description |
A series of ZnO thin films doped with various vanadium concentrations were prepared on glass substrates by direct current reactive magnetron sputtering. The results of the X-ray diffraction (XRD) show that the films with doping concentration less than 10 at.% have a wurtzite structure and grow mainly along the c-axis orientation. The residual stress, estimated by fitting the XRD diffraction peaks, increases with the doping concentration and the grain size also has been calculated from the XRD results, decreases with increasing the doping concentration. The surface morphology of the ZnO:V thin films was examined by SEM. The optical constants (refractive index and extinction coefficient) and the film thickness have been obtained by fitting the transmittance. The optical band gap changed from 3.12 eV to 3.60 eV as doping concentration increased from 1.8 at.% to 13 at.% mol. All the results have been discussed in relation with doping concentration |
publishDate |
2009 |
dc.date.none.fl_str_mv |
2009-05 2009-05-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1822/13627 |
url |
http://hdl.handle.net/1822/13627 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0040-6090 10.1016/j.tsf.2008.12.043 http://www.sciencedirect.com/science/article/pii/S0040609008016209 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier |
publisher.none.fl_str_mv |
Elsevier |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799132698543915008 |