Tailoring IGZO composition for enhanced fully solution-based thin film transistors

Detalhes bibliográficos
Autor(a) principal: Moreira, Marco
Data de Publicação: 2019
Outros Autores: Carlos, Emanuel, Dias, Carlos, Deuermeier, Jonas, Pereira, Maria, Barquinha, Pedro, Branquinho, Rita, Martins, Rodrigo, Fortunato, Elvira
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10362/98742
Resumo: UID/CTM/50025/2019 H2020 NMP-22-2015 project 1D-NEON Grant Agreement 685758 SFRH/BD/116047/2016 IDS-FunMat-INNO project FPA2016/EIT/EIT Raw Materials Grant Agreement 15015
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spelling Tailoring IGZO composition for enhanced fully solution-based thin film transistorsIGZO compositionLow voltage operationSolution combustion synthesisTransparent amorphous semiconductor oxidesChemical Engineering(all)Materials Science(all)UID/CTM/50025/2019 H2020 NMP-22-2015 project 1D-NEON Grant Agreement 685758 SFRH/BD/116047/2016 IDS-FunMat-INNO project FPA2016/EIT/EIT Raw Materials Grant Agreement 15015Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-layer In:Ga:Zn 3:1:1 with a solution-processed high-k dielectric; AlOx. The devices show saturation mobility of 3.2 cm2 V-1 s-1, IOn/IOff of 106, SS of 73 mV dec-1 and VOn of 0.18 V, thus demonstrating promising features for low-cost circuit applications.DCM - Departamento de Ciência dos MateriaisCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)UNINOVA-Instituto de Desenvolvimento de Novas TecnologiasRUNMoreira, MarcoCarlos, EmanuelDias, CarlosDeuermeier, JonasPereira, MariaBarquinha, PedroBranquinho, RitaMartins, RodrigoFortunato, Elvira2020-06-03T00:50:30Z2019-09-012019-09-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10362/98742eng2079-4991PURE: 15978009https://doi.org/10.3390/nano9091273info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:45:56Zoai:run.unl.pt:10362/98742Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:39:02.408836Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Tailoring IGZO composition for enhanced fully solution-based thin film transistors
title Tailoring IGZO composition for enhanced fully solution-based thin film transistors
spellingShingle Tailoring IGZO composition for enhanced fully solution-based thin film transistors
Moreira, Marco
IGZO composition
Low voltage operation
Solution combustion synthesis
Transparent amorphous semiconductor oxides
Chemical Engineering(all)
Materials Science(all)
title_short Tailoring IGZO composition for enhanced fully solution-based thin film transistors
title_full Tailoring IGZO composition for enhanced fully solution-based thin film transistors
title_fullStr Tailoring IGZO composition for enhanced fully solution-based thin film transistors
title_full_unstemmed Tailoring IGZO composition for enhanced fully solution-based thin film transistors
title_sort Tailoring IGZO composition for enhanced fully solution-based thin film transistors
author Moreira, Marco
author_facet Moreira, Marco
Carlos, Emanuel
Dias, Carlos
Deuermeier, Jonas
Pereira, Maria
Barquinha, Pedro
Branquinho, Rita
Martins, Rodrigo
Fortunato, Elvira
author_role author
author2 Carlos, Emanuel
Dias, Carlos
Deuermeier, Jonas
Pereira, Maria
Barquinha, Pedro
Branquinho, Rita
Martins, Rodrigo
Fortunato, Elvira
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv DCM - Departamento de Ciência dos Materiais
CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
RUN
dc.contributor.author.fl_str_mv Moreira, Marco
Carlos, Emanuel
Dias, Carlos
Deuermeier, Jonas
Pereira, Maria
Barquinha, Pedro
Branquinho, Rita
Martins, Rodrigo
Fortunato, Elvira
dc.subject.por.fl_str_mv IGZO composition
Low voltage operation
Solution combustion synthesis
Transparent amorphous semiconductor oxides
Chemical Engineering(all)
Materials Science(all)
topic IGZO composition
Low voltage operation
Solution combustion synthesis
Transparent amorphous semiconductor oxides
Chemical Engineering(all)
Materials Science(all)
description UID/CTM/50025/2019 H2020 NMP-22-2015 project 1D-NEON Grant Agreement 685758 SFRH/BD/116047/2016 IDS-FunMat-INNO project FPA2016/EIT/EIT Raw Materials Grant Agreement 15015
publishDate 2019
dc.date.none.fl_str_mv 2019-09-01
2019-09-01T00:00:00Z
2020-06-03T00:50:30Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/98742
url http://hdl.handle.net/10362/98742
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2079-4991
PURE: 15978009
https://doi.org/10.3390/nano9091273
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
_version_ 1799138006827794432

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