Low-temperature fabrication of layered self organized ge clusters by RF-sputtering

• Autor(a) principal: Pinto, S. R. C.
• Data de Publicação: 2011
• Outros Autores: Rolo, Anabela G., Buljan, M., Chahboun, A., Bernstorff, S., Barradas, N. P., Alves, E., Kashtiban, R. J., Bangert, U., Gomes, M. J. M.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/1822/15689
• topic: GISAXS grazing incidence small angle X-ray scattering; HRTEM high resolution transmission electron microscopy; NCs: nanocrystals; Ge clusters; RBS: Rutherford backscattering spectrometry; XPS: X-ray photoelectron spectroscopy; Raman spectroscopy; Magnetron sputtering; (Ge + SiO2) / SiO2 multilayers; Low temperature; Science & Technology

In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Rutherford backscattering spectrometry, Raman, and X-ray photoelectron spectroscopies. We show a formation of self-assembled Ge clusters during the deposition at 250°C. The clusters are ordered in a three-dimensional lattice, and they have very small sizes (about 3 nm) and narrow size distribution. The crystallization of the clusters was achieved at annealing temperature of 700°C.