Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

Detalhes bibliográficos
Autor(a) principal: He, Bo
Data de Publicação: 2023
Outros Autores: He, Gang, Hu, Qingqing, Jiang, Shanshan, Gao, Qian, Fortunato, Elvira, Martins, Rodrigo
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10362/154927
Resumo: Funding Information: This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 11774001 and 52202156). The authors also acknowledge the support from Anhui Project (No.Z010118169), and the Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University (MEMSZJERC2202). Publisher Copyright: © 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.
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spelling Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operationdopingelectrospinningmobilitynaofiber networksthin-film transistorsElectronic, Optical and Magnetic MaterialsFunding Information: This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 11774001 and 52202156). The authors also acknowledge the support from Anhui Project (No.Z010118169), and the Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University (MEMSZJERC2202). Publisher Copyright: © 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next-generation, low-cost thin-film transistors (TFTs), these NFs-based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field-effect mobility (µFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy-efficient enhancement-mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD-derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor-loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large-scale electronics.UNINOVA-Instituto de Desenvolvimento de Novas TecnologiasCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)DCM - Departamento de Ciência dos MateriaisRUNHe, BoHe, GangHu, QingqingJiang, ShanshanGao, QianFortunato, ElviraMartins, Rodrigo2023-07-06T22:15:59Z2023-052023-05-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10application/pdfhttp://hdl.handle.net/10362/154927eng2199-160XPURE: 65370200https://doi.org/10.1002/aelm.202300032info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T05:37:23Zoai:run.unl.pt:10362/154927Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:55:51.077625Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation
title Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation
spellingShingle Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation
He, Bo
doping
electrospinning
mobility
naofiber networks
thin-film transistors
Electronic, Optical and Magnetic Materials
title_short Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation
title_full Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation
title_fullStr Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation
title_full_unstemmed Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation
title_sort Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation
author He, Bo
author_facet He, Bo
He, Gang
Hu, Qingqing
Jiang, Shanshan
Gao, Qian
Fortunato, Elvira
Martins, Rodrigo
author_role author
author2 He, Gang
Hu, Qingqing
Jiang, Shanshan
Gao, Qian
Fortunato, Elvira
Martins, Rodrigo
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
DCM - Departamento de Ciência dos Materiais
RUN
dc.contributor.author.fl_str_mv He, Bo
He, Gang
Hu, Qingqing
Jiang, Shanshan
Gao, Qian
Fortunato, Elvira
Martins, Rodrigo
dc.subject.por.fl_str_mv doping
electrospinning
mobility
naofiber networks
thin-film transistors
Electronic, Optical and Magnetic Materials
topic doping
electrospinning
mobility
naofiber networks
thin-film transistors
Electronic, Optical and Magnetic Materials
description Funding Information: This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 11774001 and 52202156). The authors also acknowledge the support from Anhui Project (No.Z010118169), and the Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University (MEMSZJERC2202). Publisher Copyright: © 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.
publishDate 2023
dc.date.none.fl_str_mv 2023-07-06T22:15:59Z
2023-05
2023-05-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/154927
url http://hdl.handle.net/10362/154927
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2199-160X
PURE: 65370200
https://doi.org/10.1002/aelm.202300032
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 10
application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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