Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation
Autor(a) principal: | |
---|---|
Data de Publicação: | 2023 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10362/154927 |
Resumo: | Funding Information: This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 11774001 and 52202156). The authors also acknowledge the support from Anhui Project (No.Z010118169), and the Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University (MEMSZJERC2202). Publisher Copyright: © 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH. |
id |
RCAP_b7e094c569e006e5c1ef4b29975a1d10 |
---|---|
oai_identifier_str |
oai:run.unl.pt:10362/154927 |
network_acronym_str |
RCAP |
network_name_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository_id_str |
7160 |
spelling |
Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operationdopingelectrospinningmobilitynaofiber networksthin-film transistorsElectronic, Optical and Magnetic MaterialsFunding Information: This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 11774001 and 52202156). The authors also acknowledge the support from Anhui Project (No.Z010118169), and the Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University (MEMSZJERC2202). Publisher Copyright: © 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next-generation, low-cost thin-film transistors (TFTs), these NFs-based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field-effect mobility (µFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy-efficient enhancement-mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD-derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor-loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large-scale electronics.UNINOVA-Instituto de Desenvolvimento de Novas TecnologiasCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)DCM - Departamento de Ciência dos MateriaisRUNHe, BoHe, GangHu, QingqingJiang, ShanshanGao, QianFortunato, ElviraMartins, Rodrigo2023-07-06T22:15:59Z2023-052023-05-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10application/pdfhttp://hdl.handle.net/10362/154927eng2199-160XPURE: 65370200https://doi.org/10.1002/aelm.202300032info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T05:37:23Zoai:run.unl.pt:10362/154927Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:55:51.077625Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation |
title |
Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation |
spellingShingle |
Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation He, Bo doping electrospinning mobility naofiber networks thin-film transistors Electronic, Optical and Magnetic Materials |
title_short |
Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation |
title_full |
Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation |
title_fullStr |
Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation |
title_full_unstemmed |
Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation |
title_sort |
Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation |
author |
He, Bo |
author_facet |
He, Bo He, Gang Hu, Qingqing Jiang, Shanshan Gao, Qian Fortunato, Elvira Martins, Rodrigo |
author_role |
author |
author2 |
He, Gang Hu, Qingqing Jiang, Shanshan Gao, Qian Fortunato, Elvira Martins, Rodrigo |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N) DCM - Departamento de Ciência dos Materiais RUN |
dc.contributor.author.fl_str_mv |
He, Bo He, Gang Hu, Qingqing Jiang, Shanshan Gao, Qian Fortunato, Elvira Martins, Rodrigo |
dc.subject.por.fl_str_mv |
doping electrospinning mobility naofiber networks thin-film transistors Electronic, Optical and Magnetic Materials |
topic |
doping electrospinning mobility naofiber networks thin-film transistors Electronic, Optical and Magnetic Materials |
description |
Funding Information: This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 11774001 and 52202156). The authors also acknowledge the support from Anhui Project (No.Z010118169), and the Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University (MEMSZJERC2202). Publisher Copyright: © 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH. |
publishDate |
2023 |
dc.date.none.fl_str_mv |
2023-07-06T22:15:59Z 2023-05 2023-05-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10362/154927 |
url |
http://hdl.handle.net/10362/154927 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2199-160X PURE: 65370200 https://doi.org/10.1002/aelm.202300032 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
10 application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
|
_version_ |
1799138145144406016 |