Erbium-doped silicon nanocrystals grown by r.f. sputtering method: competition between oxygen and silicon to get erbium

Detalhes bibliográficos
Autor(a) principal: Cerqueira, M. F.
Data de Publicação: 2006
Outros Autores: Stepikhova, M., Losurdo, M., Giangregorio, M. M., Kozanecki, A., Monteiro, T.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/1822/13901
Resumo: Erbium doped micro- and nanocrystalline silicon thin films have been deposited by co-sputtering of Er and Si. Films with different crystallinity, crystallite size, hydrogen and oxygen content have been obtained in order to investigate the effect of the microstructure and composition of matrix on the near IR range at 1.54 µm Er-related photoluminescence (PL) properties. The correlation between the optical properties and microstructural parameters of the films is investigated using spectroscopic ellipsometry. It is found that the luminescent properties of these composite films can be understood on the basis of the ellipsometric analysis that reveals the films heterogeneous structure, and that Er-related PL dominates in films with 1-3 nm sized Si nanocrystals embedded in a-Si:H.
id RCAP_b893a59ec7d64a8cc8bd5d18c56c0fec
oai_identifier_str oai:repositorium.sdum.uminho.pt:1822/13901
network_acronym_str RCAP
network_name_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository_id_str 7160
spelling Erbium-doped silicon nanocrystals grown by r.f. sputtering method: competition between oxygen and silicon to get erbiumSilicon nanocrystalsErbium dopingPhotoluminescenceEllipsometrync-Sispectroscopic ellipsometryoptical propertiesthin filmsScience & TechnologyErbium doped micro- and nanocrystalline silicon thin films have been deposited by co-sputtering of Er and Si. Films with different crystallinity, crystallite size, hydrogen and oxygen content have been obtained in order to investigate the effect of the microstructure and composition of matrix on the near IR range at 1.54 µm Er-related photoluminescence (PL) properties. The correlation between the optical properties and microstructural parameters of the films is investigated using spectroscopic ellipsometry. It is found that the luminescent properties of these composite films can be understood on the basis of the ellipsometric analysis that reveals the films heterogeneous structure, and that Er-related PL dominates in films with 1-3 nm sized Si nanocrystals embedded in a-Si:H.INTAS Project #03-51-6486Fundação para a Ciência e a Tecnologia Project POCTI/CTM/39395/2001ElsevierUniversidade do MinhoCerqueira, M. F.Stepikhova, M.Losurdo, M.Giangregorio, M. M.Kozanecki, A.Monteiro, T.20062006-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/13901eng0925-346710.1016/j.optmat.2005.09.035info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:42:46Zoai:repositorium.sdum.uminho.pt:1822/13901Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:40:05.895663Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Erbium-doped silicon nanocrystals grown by r.f. sputtering method: competition between oxygen and silicon to get erbium
title Erbium-doped silicon nanocrystals grown by r.f. sputtering method: competition between oxygen and silicon to get erbium
spellingShingle Erbium-doped silicon nanocrystals grown by r.f. sputtering method: competition between oxygen and silicon to get erbium
Cerqueira, M. F.
Silicon nanocrystals
Erbium doping
Photoluminescence
Ellipsometry
nc-Si
spectroscopic ellipsometry
optical properties
thin films
Science & Technology
title_short Erbium-doped silicon nanocrystals grown by r.f. sputtering method: competition between oxygen and silicon to get erbium
title_full Erbium-doped silicon nanocrystals grown by r.f. sputtering method: competition between oxygen and silicon to get erbium
title_fullStr Erbium-doped silicon nanocrystals grown by r.f. sputtering method: competition between oxygen and silicon to get erbium
title_full_unstemmed Erbium-doped silicon nanocrystals grown by r.f. sputtering method: competition between oxygen and silicon to get erbium
title_sort Erbium-doped silicon nanocrystals grown by r.f. sputtering method: competition between oxygen and silicon to get erbium
author Cerqueira, M. F.
author_facet Cerqueira, M. F.
Stepikhova, M.
Losurdo, M.
Giangregorio, M. M.
Kozanecki, A.
Monteiro, T.
author_role author
author2 Stepikhova, M.
Losurdo, M.
Giangregorio, M. M.
Kozanecki, A.
Monteiro, T.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Cerqueira, M. F.
Stepikhova, M.
Losurdo, M.
Giangregorio, M. M.
Kozanecki, A.
Monteiro, T.
dc.subject.por.fl_str_mv Silicon nanocrystals
Erbium doping
Photoluminescence
Ellipsometry
nc-Si
spectroscopic ellipsometry
optical properties
thin films
Science & Technology
topic Silicon nanocrystals
Erbium doping
Photoluminescence
Ellipsometry
nc-Si
spectroscopic ellipsometry
optical properties
thin films
Science & Technology
description Erbium doped micro- and nanocrystalline silicon thin films have been deposited by co-sputtering of Er and Si. Films with different crystallinity, crystallite size, hydrogen and oxygen content have been obtained in order to investigate the effect of the microstructure and composition of matrix on the near IR range at 1.54 µm Er-related photoluminescence (PL) properties. The correlation between the optical properties and microstructural parameters of the films is investigated using spectroscopic ellipsometry. It is found that the luminescent properties of these composite films can be understood on the basis of the ellipsometric analysis that reveals the films heterogeneous structure, and that Er-related PL dominates in films with 1-3 nm sized Si nanocrystals embedded in a-Si:H.
publishDate 2006
dc.date.none.fl_str_mv 2006
2006-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/1822/13901
url http://hdl.handle.net/1822/13901
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0925-3467
10.1016/j.optmat.2005.09.035
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
_version_ 1799132945107124224

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