New challenges of printed high-к oxide dielectrics

• Autor(a) principal: Carlos, Emanuel
• Data de Publicação: 2021
• Outros Autores: Branquinho, Rita, Martins, Rodrigo, Fortunato, Elvira
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/10362/135513
• topic: High-к oxide dielectrics; Large-scale manufacturing; Printed electronics; Scale-up challenges; Solution-processed; Thin film devices; Electronic, Optical and Magnetic Materials; Condensed Matter Physics; Electrical and Electronic Engineering; Materials Chemistry; SDG 7 - Affordable and Clean Energy; SDG 13 - Climate Action

High-permittivity (к) oxide dielectrics have been widely demanded concerning the Internet of Things (IoT) requirements, such as flexible large-area manufacturing, energy efficiency, low-cost processes, and sustainable electronics, especially in thin-film transistors (TFTs). From there emerged the necessity of printing energy-efficient (vacuum-free) eco-devices using low-temperature methods (e.g., combustion synthesis, post-treatments) in the production and processing of nanomaterials, thus reducing the human carbon footprint. However, currently the main deposition method used is typically spin-coating which requires higher temperatures and long annealing times, not compatible with the printing industry. Besides the concerns with process integration, the market highly demands high-к dielectrics with great stability and high yield. To surpass these challenges, some crucial parameters in the ink design need to be considered to guarantee successful upscale for large-area electronics manufacturing.