Relationship between nano-architectured Ti1−xCux thin film and electrical resistivity for resistance temperature detectors
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/1822/48422 |
Resumo: | Ti1−xCux thin films were produced by the glancing angle deposition technique (GLAD) for resistance temperature measurements. The deposition angle was fixed at α = 0° to growth columnar structures and α = 45° to growth zigzag structures. The Ti-to-Cu atomic concentration was tuned from 0 to 100 at.% of Cu in order to optimize the temperature coefficient of resistance (TCR) value. Increasing the amount of Cu in the Ti1−xCux thin films, the electrical conductivity was gradually changed from 4.35 to 7.87 × 105 Ω−1 m−1. After thermal “stabilization,” the zigzag structures of Ti1−xCux films induce strong variation of the thermosensitive response of the materials and exhibited a reversible resistivity versus temperature between 35 and 200 °C. The results reveal that the microstructure has an evident influence on the overall response of the films, leading to values of TCR of 8.73 × 10−3 °C−1 for pure copper films and of 4.38 × 10−3 °C−1 for a films of composition Ti0.49Cu0.51. These values are very close to the ones reported for the bulk platinum (3.93 × 10−3 °C−1), which is known to be one of the best material available for these kind of temperature-related applications. The non-existence of hysteresis in the electrical response of consecutive heating and cooling steps indicates the viability of these nanostructured zigzag materials to be used as thermosensitive sensors. |
id |
RCAP_c3a7a8c64de5c9b421ecdf6fe41994e5 |
---|---|
oai_identifier_str |
oai:repositorium.sdum.uminho.pt:1822/48422 |
network_acronym_str |
RCAP |
network_name_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository_id_str |
7160 |
spelling |
Relationship between nano-architectured Ti1−xCux thin film and electrical resistivity for resistance temperature detectorsCiências Naturais::Ciências FísicasScience & TechnologyTi1−xCux thin films were produced by the glancing angle deposition technique (GLAD) for resistance temperature measurements. The deposition angle was fixed at α = 0° to growth columnar structures and α = 45° to growth zigzag structures. The Ti-to-Cu atomic concentration was tuned from 0 to 100 at.% of Cu in order to optimize the temperature coefficient of resistance (TCR) value. Increasing the amount of Cu in the Ti1−xCux thin films, the electrical conductivity was gradually changed from 4.35 to 7.87 × 105 Ω−1 m−1. After thermal “stabilization,” the zigzag structures of Ti1−xCux films induce strong variation of the thermosensitive response of the materials and exhibited a reversible resistivity versus temperature between 35 and 200 °C. The results reveal that the microstructure has an evident influence on the overall response of the films, leading to values of TCR of 8.73 × 10−3 °C−1 for pure copper films and of 4.38 × 10−3 °C−1 for a films of composition Ti0.49Cu0.51. These values are very close to the ones reported for the bulk platinum (3.93 × 10−3 °C−1), which is known to be one of the best material available for these kind of temperature-related applications. The non-existence of hysteresis in the electrical response of consecutive heating and cooling steps indicates the viability of these nanostructured zigzag materials to be used as thermosensitive sensors.Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding UID/FIS/04650/2013 and Project PTDC/EEI-SII/5582/2014. A. Ferreira and C. Lopes thanks the FCT for Grant SFRH/BPD/102402/2014 and SFRH/BD/103373/2014. The authors thank financial support from the Basque Government Industry Department under the ELKARTEK Programinfo:eu-repo/semantics/publishedVersionSpringerUniversidade do MinhoFerreira, Armando José BarrosBorges, Joel Nuno PintoLopes, C.Rodrigues, M. S.Lanceros-Méndez, S.Vaz, F.2017-052017-05-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/48422engFerreira, A., Borges, J., Lopes, C. et al. J Mater Sci (2017) 52: 4878. https://doi.org/10.1007/s10853-016-0722-x0022-24611573-480310.1007/s10853-016-0722-xhttps://link.springer.com/article/10.1007/s10853-016-0722-xinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:07:42Zoai:repositorium.sdum.uminho.pt:1822/48422Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T18:58:43.886968Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Relationship between nano-architectured Ti1−xCux thin film and electrical resistivity for resistance temperature detectors |
title |
Relationship between nano-architectured Ti1−xCux thin film and electrical resistivity for resistance temperature detectors |
spellingShingle |
Relationship between nano-architectured Ti1−xCux thin film and electrical resistivity for resistance temperature detectors Ferreira, Armando José Barros Ciências Naturais::Ciências Físicas Science & Technology |
title_short |
Relationship between nano-architectured Ti1−xCux thin film and electrical resistivity for resistance temperature detectors |
title_full |
Relationship between nano-architectured Ti1−xCux thin film and electrical resistivity for resistance temperature detectors |
title_fullStr |
Relationship between nano-architectured Ti1−xCux thin film and electrical resistivity for resistance temperature detectors |
title_full_unstemmed |
Relationship between nano-architectured Ti1−xCux thin film and electrical resistivity for resistance temperature detectors |
title_sort |
Relationship between nano-architectured Ti1−xCux thin film and electrical resistivity for resistance temperature detectors |
author |
Ferreira, Armando José Barros |
author_facet |
Ferreira, Armando José Barros Borges, Joel Nuno Pinto Lopes, C. Rodrigues, M. S. Lanceros-Méndez, S. Vaz, F. |
author_role |
author |
author2 |
Borges, Joel Nuno Pinto Lopes, C. Rodrigues, M. S. Lanceros-Méndez, S. Vaz, F. |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Ferreira, Armando José Barros Borges, Joel Nuno Pinto Lopes, C. Rodrigues, M. S. Lanceros-Méndez, S. Vaz, F. |
dc.subject.por.fl_str_mv |
Ciências Naturais::Ciências Físicas Science & Technology |
topic |
Ciências Naturais::Ciências Físicas Science & Technology |
description |
Ti1−xCux thin films were produced by the glancing angle deposition technique (GLAD) for resistance temperature measurements. The deposition angle was fixed at α = 0° to growth columnar structures and α = 45° to growth zigzag structures. The Ti-to-Cu atomic concentration was tuned from 0 to 100 at.% of Cu in order to optimize the temperature coefficient of resistance (TCR) value. Increasing the amount of Cu in the Ti1−xCux thin films, the electrical conductivity was gradually changed from 4.35 to 7.87 × 105 Ω−1 m−1. After thermal “stabilization,” the zigzag structures of Ti1−xCux films induce strong variation of the thermosensitive response of the materials and exhibited a reversible resistivity versus temperature between 35 and 200 °C. The results reveal that the microstructure has an evident influence on the overall response of the films, leading to values of TCR of 8.73 × 10−3 °C−1 for pure copper films and of 4.38 × 10−3 °C−1 for a films of composition Ti0.49Cu0.51. These values are very close to the ones reported for the bulk platinum (3.93 × 10−3 °C−1), which is known to be one of the best material available for these kind of temperature-related applications. The non-existence of hysteresis in the electrical response of consecutive heating and cooling steps indicates the viability of these nanostructured zigzag materials to be used as thermosensitive sensors. |
publishDate |
2017 |
dc.date.none.fl_str_mv |
2017-05 2017-05-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1822/48422 |
url |
http://hdl.handle.net/1822/48422 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Ferreira, A., Borges, J., Lopes, C. et al. J Mater Sci (2017) 52: 4878. https://doi.org/10.1007/s10853-016-0722-x 0022-2461 1573-4803 10.1007/s10853-016-0722-x https://link.springer.com/article/10.1007/s10853-016-0722-x |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Springer |
publisher.none.fl_str_mv |
Springer |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
|
_version_ |
1799132378047709184 |