High-performance flexible hybrid field-effect transistors based on cellulose fiber paper

Detalhes bibliográficos
Autor(a) principal: Fortunato, Elvira
Data de Publicação: 2008
Outros Autores: Correia, Nuno, Barquinha, Pedro, Pereira, Luís Miguel Nunes, Gonçalves, Gonçalo, Martins, Rodrigo
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10362/3242
Resumo: IEEE Electron Device Letters, VOL. 29, NO. 9,
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spelling High-performance flexible hybrid field-effect transistors based on cellulose fiber paperCellulose fibersOxide field-effect transistor (FET)RF magnetron sputteringThin filmsIEEE Electron Device Letters, VOL. 29, NO. 9,Abstract—In this letter, we report for the first time the use of a sheet of cellulose-fiber-based paper as the dielectric layer used in oxide-based semiconductor thin-film field-effect transistors(FETs). In this new approach, we are using the cellulose–fiber-based paper in an “interstrate” structure since the device is built on both sides of the cellulose sheet. Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (> 30 cm2/Vs), drain–source current on/off modulation ratio of approximately 104, near-zero threshold voltage, enhancement n-type operation, and subthreshold gate voltage swing of 0.8 V/decade. The cellulose-fiber-based paper FETs’ characteristics have been measured in air ambient conditions and present good stability, after two months of being processed. The obtained results outpace those of amorphous Si thin-film transistors (TFTs) and rival with the same oxide-based TFTs produced on either glass or crystalline silicon substrates. The compatibility of these devices with large-scale/large-area deposition techniques and low–cost substrates as well as their very low operating bias delineates this as a promising approach to attain high-performance disposable electronics like paper displays, smart labels, smart packaging, RFID, and point-of-care systems for self-analysis in bioapplications, among others.This work was supported in part by the Fundação para a Ciência e a Tecnologia (FCT), Ministério da Ciência, Tecnologia e Ensino Superior (MCTES), under Project PTDC/CTM/73943/2006 and Project PTDC/EEA-ELC/64975/2006 and in part by the Electronic and Telecommunications Research Institute (ETRI),Korea. The work of P. Barquinha was supported by FCT under Fellowship SFRH/BD/17970/2004. The work of G. Gonçalves was supported by FCT under Fellowship SFRH/BD/27313/2006.IEEE Electron Devices SocietyRUNFortunato, ElviraCorreia, NunoBarquinha, PedroPereira, Luís Miguel NunesGonçalves, GonçaloMartins, Rodrigo2010-03-17T10:24:17Z20082008-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10362/3242eng0741-3106info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T03:33:07Zoai:run.unl.pt:10362/3242Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:15:18.953673Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv High-performance flexible hybrid field-effect transistors based on cellulose fiber paper
title High-performance flexible hybrid field-effect transistors based on cellulose fiber paper
spellingShingle High-performance flexible hybrid field-effect transistors based on cellulose fiber paper
Fortunato, Elvira
Cellulose fibers
Oxide field-effect transistor (FET)
RF magnetron sputtering
Thin films
title_short High-performance flexible hybrid field-effect transistors based on cellulose fiber paper
title_full High-performance flexible hybrid field-effect transistors based on cellulose fiber paper
title_fullStr High-performance flexible hybrid field-effect transistors based on cellulose fiber paper
title_full_unstemmed High-performance flexible hybrid field-effect transistors based on cellulose fiber paper
title_sort High-performance flexible hybrid field-effect transistors based on cellulose fiber paper
author Fortunato, Elvira
author_facet Fortunato, Elvira
Correia, Nuno
Barquinha, Pedro
Pereira, Luís Miguel Nunes
Gonçalves, Gonçalo
Martins, Rodrigo
author_role author
author2 Correia, Nuno
Barquinha, Pedro
Pereira, Luís Miguel Nunes
Gonçalves, Gonçalo
Martins, Rodrigo
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv RUN
dc.contributor.author.fl_str_mv Fortunato, Elvira
Correia, Nuno
Barquinha, Pedro
Pereira, Luís Miguel Nunes
Gonçalves, Gonçalo
Martins, Rodrigo
dc.subject.por.fl_str_mv Cellulose fibers
Oxide field-effect transistor (FET)
RF magnetron sputtering
Thin films
topic Cellulose fibers
Oxide field-effect transistor (FET)
RF magnetron sputtering
Thin films
description IEEE Electron Device Letters, VOL. 29, NO. 9,
publishDate 2008
dc.date.none.fl_str_mv 2008
2008-01-01T00:00:00Z
2010-03-17T10:24:17Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/3242
url http://hdl.handle.net/10362/3242
dc.language.iso.fl_str_mv eng
language eng
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dc.publisher.none.fl_str_mv IEEE Electron Devices Society
publisher.none.fl_str_mv IEEE Electron Devices Society
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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