Band gaps of wurtzite ScxGa1-xN alloys

Detalhes bibliográficos
Autor(a) principal: Tsui, H C L
Data de Publicação: 2015
Outros Autores: Goff, L E, Rhode, S K, Pereira, S, Beere, H E, Farrer, I, Nicoll, C A, Ritchie, D A, Moram, M A
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10773/18184
Resumo: Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure ScxGa1−xN films with 0 ≤ x ≤ 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I1- and I2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for ScxGa1−xN films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in ScxGa1−xN band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions.
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spelling Band gaps of wurtzite ScxGa1-xN alloysOptical transmittance measurements on epitaxial, phase-pure, wurtzite-structure ScxGa1−xN films with 0 ≤ x ≤ 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I1- and I2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for ScxGa1−xN films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in ScxGa1−xN band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions.AIP Publishing2017-07-31T14:55:34Z2015-01-01T00:00:00Z2015info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/18184eng1077-311810.1063/1.4916679Tsui, H C LGoff, L ERhode, S KPereira, SBeere, H EFarrer, INicoll, C ARitchie, D AMoram, M Ainfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:33:37Zoai:ria.ua.pt:10773/18184Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T02:52:40.459044Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Band gaps of wurtzite ScxGa1-xN alloys
title Band gaps of wurtzite ScxGa1-xN alloys
spellingShingle Band gaps of wurtzite ScxGa1-xN alloys
Tsui, H C L
title_short Band gaps of wurtzite ScxGa1-xN alloys
title_full Band gaps of wurtzite ScxGa1-xN alloys
title_fullStr Band gaps of wurtzite ScxGa1-xN alloys
title_full_unstemmed Band gaps of wurtzite ScxGa1-xN alloys
title_sort Band gaps of wurtzite ScxGa1-xN alloys
author Tsui, H C L
author_facet Tsui, H C L
Goff, L E
Rhode, S K
Pereira, S
Beere, H E
Farrer, I
Nicoll, C A
Ritchie, D A
Moram, M A
author_role author
author2 Goff, L E
Rhode, S K
Pereira, S
Beere, H E
Farrer, I
Nicoll, C A
Ritchie, D A
Moram, M A
author2_role author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Tsui, H C L
Goff, L E
Rhode, S K
Pereira, S
Beere, H E
Farrer, I
Nicoll, C A
Ritchie, D A
Moram, M A
description Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure ScxGa1−xN films with 0 ≤ x ≤ 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I1- and I2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for ScxGa1−xN films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in ScxGa1−xN band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions.
publishDate 2015
dc.date.none.fl_str_mv 2015-01-01T00:00:00Z
2015
2017-07-31T14:55:34Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10773/18184
url http://hdl.handle.net/10773/18184
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 1077-3118
10.1063/1.4916679
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AIP Publishing
publisher.none.fl_str_mv AIP Publishing
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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