Band gaps of wurtzite ScxGa1-xN alloys

Detalhes bibliográficos
Autor(a) principal: Tsui, H. C. L.
Data de Publicação: 2015
Outros Autores: Goff, L. E., Rhode, S. K., Pereira, S., Beere, H. E., Farrer, I., Nicoll, C. A., Ritchie, D. A., Moram, M. A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10773/19813
Resumo: Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure ScxGa1-xN films with 0 <= x <= 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I-1- and I-2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for ScxGa1-xN films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in ScxGa1-xN band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions. (C) 2015 AIP Publishing LLC.
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spelling Band gaps of wurtzite ScxGa1-xN alloysLIGHT-EMITTING-DIODESELECTRONIC-PROPERTIESCUBIC GANSCGANFILMSSCNMICROSTRUCTURESPECTRASCASOptical transmittance measurements on epitaxial, phase-pure, wurtzite-structure ScxGa1-xN films with 0 <= x <= 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I-1- and I-2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for ScxGa1-xN films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in ScxGa1-xN band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions. (C) 2015 AIP Publishing LLC.AMER INST PHYSICS2017-12-07T19:25:44Z2015-01-01T00:00:00Z2015info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/19813eng0003-695110.1063/1.4916679Tsui, H. C. L.Goff, L. E.Rhode, S. K.Pereira, S.Beere, H. E.Farrer, I.Nicoll, C. A.Ritchie, D. A.Moram, M. A.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:38:37Zoai:ria.ua.pt:10773/19813Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T02:54:33.039068Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Band gaps of wurtzite ScxGa1-xN alloys
title Band gaps of wurtzite ScxGa1-xN alloys
spellingShingle Band gaps of wurtzite ScxGa1-xN alloys
Tsui, H. C. L.
LIGHT-EMITTING-DIODES
ELECTRONIC-PROPERTIES
CUBIC GAN
SCGAN
FILMS
SCN
MICROSTRUCTURE
SPECTRA
SCAS
title_short Band gaps of wurtzite ScxGa1-xN alloys
title_full Band gaps of wurtzite ScxGa1-xN alloys
title_fullStr Band gaps of wurtzite ScxGa1-xN alloys
title_full_unstemmed Band gaps of wurtzite ScxGa1-xN alloys
title_sort Band gaps of wurtzite ScxGa1-xN alloys
author Tsui, H. C. L.
author_facet Tsui, H. C. L.
Goff, L. E.
Rhode, S. K.
Pereira, S.
Beere, H. E.
Farrer, I.
Nicoll, C. A.
Ritchie, D. A.
Moram, M. A.
author_role author
author2 Goff, L. E.
Rhode, S. K.
Pereira, S.
Beere, H. E.
Farrer, I.
Nicoll, C. A.
Ritchie, D. A.
Moram, M. A.
author2_role author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Tsui, H. C. L.
Goff, L. E.
Rhode, S. K.
Pereira, S.
Beere, H. E.
Farrer, I.
Nicoll, C. A.
Ritchie, D. A.
Moram, M. A.
dc.subject.por.fl_str_mv LIGHT-EMITTING-DIODES
ELECTRONIC-PROPERTIES
CUBIC GAN
SCGAN
FILMS
SCN
MICROSTRUCTURE
SPECTRA
SCAS
topic LIGHT-EMITTING-DIODES
ELECTRONIC-PROPERTIES
CUBIC GAN
SCGAN
FILMS
SCN
MICROSTRUCTURE
SPECTRA
SCAS
description Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure ScxGa1-xN films with 0 <= x <= 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I-1- and I-2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for ScxGa1-xN films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in ScxGa1-xN band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions. (C) 2015 AIP Publishing LLC.
publishDate 2015
dc.date.none.fl_str_mv 2015-01-01T00:00:00Z
2015
2017-12-07T19:25:44Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10773/19813
url http://hdl.handle.net/10773/19813
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0003-6951
10.1063/1.4916679
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AMER INST PHYSICS
publisher.none.fl_str_mv AMER INST PHYSICS
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
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