Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

Detalhes bibliográficos
Autor(a) principal: de Boer, W. D. A. M.
Data de Publicação: 2014
Outros Autores: McGonigle, C., Gregorkiewicz, Tom, Fujiwara, Y., Tanabe, S., Stallinga, Peter
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.1/11551
Resumo: We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (similar to 10%) and (similar to 3%) under continuous wave and pulsed excitation, respectively.
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spelling Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaNEarth-Doped GanLight-emitting diodeNanocrystalsIonsSiteWe investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (similar to 10%) and (similar to 3%) under continuous wave and pulsed excitation, respectively.Stichting voor de Technologische Wetenschappen (STW); Japan Society for the Promotion of Science [19GS1209, 24226009]; Ministry of Education, Culture, Sports, Science and Technology of JapanNature Publishing GroupSapientiade Boer, W. D. A. M.McGonigle, C.Gregorkiewicz, TomFujiwara, Y.Tanabe, S.Stallinga, Peter2018-12-07T14:53:30Z2014-062014-06-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/11551eng2045-232210.1038/srep05235info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-24T10:23:22ZPortal AgregadorONG
dc.title.none.fl_str_mv Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN
title Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN
spellingShingle Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN
de Boer, W. D. A. M.
Earth-Doped Gan
Light-emitting diode
Nanocrystals
Ions
Site
title_short Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN
title_full Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN
title_fullStr Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN
title_full_unstemmed Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN
title_sort Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN
author de Boer, W. D. A. M.
author_facet de Boer, W. D. A. M.
McGonigle, C.
Gregorkiewicz, Tom
Fujiwara, Y.
Tanabe, S.
Stallinga, Peter
author_role author
author2 McGonigle, C.
Gregorkiewicz, Tom
Fujiwara, Y.
Tanabe, S.
Stallinga, Peter
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Sapientia
dc.contributor.author.fl_str_mv de Boer, W. D. A. M.
McGonigle, C.
Gregorkiewicz, Tom
Fujiwara, Y.
Tanabe, S.
Stallinga, Peter
dc.subject.por.fl_str_mv Earth-Doped Gan
Light-emitting diode
Nanocrystals
Ions
Site
topic Earth-Doped Gan
Light-emitting diode
Nanocrystals
Ions
Site
description We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (similar to 10%) and (similar to 3%) under continuous wave and pulsed excitation, respectively.
publishDate 2014
dc.date.none.fl_str_mv 2014-06
2014-06-01T00:00:00Z
2018-12-07T14:53:30Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.1/11551
url http://hdl.handle.net/10400.1/11551
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2045-2322
10.1038/srep05235
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Nature Publishing Group
publisher.none.fl_str_mv Nature Publishing Group
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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repository.mail.fl_str_mv
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