Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes

Detalhes bibliográficos
Autor(a) principal: Macedo, Andréia G.
Data de Publicação: 2008
Outros Autores: Vasconcelos, Elder A. de, Valaski, Rogério, Muchenski, Fábio, Silva Jr, Eronides F. da, Silva, Antônio F. da, Roman, Lucimara S.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFBA
Texto Completo: http://www.repositorio.ufba.br/ri/handle/ri/5995
Resumo: Acesso restrito: Texto completo. p. 870-873
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spelling Macedo, Andréia G.Vasconcelos, Elder A. deValaski, RogérioMuchenski, FábioSilva Jr, Eronides F. daSilva, Antônio F. daRoman, Lucimara S.Macedo, Andréia G.Vasconcelos, Elder A. deValaski, RogérioMuchenski, FábioSilva Jr, Eronides F. daSilva, Antônio F. daRoman, Lucimara S.2012-05-30T17:29:06Z20080040-6090http://www.repositorio.ufba.br/ri/handle/ri/5995v. 517, n. 2Acesso restrito: Texto completo. p. 870-873We investigated the electrical and optical properties of porous Si (PS) light-emitting diodes using fluorinated tin oxide (FTO) as transparent electrodes. At high forward bias, the current–voltage characteristic is space charge limited. At low forward bias, it follows an exponential law. Whereas the electroluminescence (EL) in devices with non-fluorinated indium–tin oxide electrodes degrades in few minutes, EL intensity in devices with FTO electrodes shows little degradation after 1300 min of operation. This result indicates that the well known beneficial effects of fluorinated species in the improvement of resistance to irradiation and carrier injection degradation in metal–oxide–semiconductor devices might be also observed in PS devices.Submitted by JURANDI DE SOUZA SILVA (jssufba@hotmail.com) on 2012-05-30T17:29:06Z No. of bitstreams: 1 __ac.els-cdn.com_S004060...f59a4b8a28017c678978c4bd20746.pdf: 271686 bytes, checksum: 1841299c374097092889f5a7c42eadf7 (MD5)Made available in DSpace on 2012-05-30T17:29:06Z (GMT). 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dc.title.pt_BR.fl_str_mv Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes
dc.title.alternative.pt_BR.fl_str_mv THIN SOLID FILMS
title Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes
spellingShingle Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes
Macedo, Andréia G.
Porous silicon
Photoluminescence
Fluorine doped tin oxide
Light-emitting diodes
title_short Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes
title_full Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes
title_fullStr Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes
title_full_unstemmed Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes
title_sort Enhanced lifetime in porous silicon light-emitting diodes with fluorine doped tin oxide electrodes
author Macedo, Andréia G.
author_facet Macedo, Andréia G.
Vasconcelos, Elder A. de
Valaski, Rogério
Muchenski, Fábio
Silva Jr, Eronides F. da
Silva, Antônio F. da
Roman, Lucimara S.
author_role author
author2 Vasconcelos, Elder A. de
Valaski, Rogério
Muchenski, Fábio
Silva Jr, Eronides F. da
Silva, Antônio F. da
Roman, Lucimara S.
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Macedo, Andréia G.
Vasconcelos, Elder A. de
Valaski, Rogério
Muchenski, Fábio
Silva Jr, Eronides F. da
Silva, Antônio F. da
Roman, Lucimara S.
Macedo, Andréia G.
Vasconcelos, Elder A. de
Valaski, Rogério
Muchenski, Fábio
Silva Jr, Eronides F. da
Silva, Antônio F. da
Roman, Lucimara S.
dc.subject.por.fl_str_mv Porous silicon
Photoluminescence
Fluorine doped tin oxide
Light-emitting diodes
topic Porous silicon
Photoluminescence
Fluorine doped tin oxide
Light-emitting diodes
description Acesso restrito: Texto completo. p. 870-873
publishDate 2008
dc.date.issued.fl_str_mv 2008
dc.date.accessioned.fl_str_mv 2012-05-30T17:29:06Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
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dc.identifier.uri.fl_str_mv http://www.repositorio.ufba.br/ri/handle/ri/5995
dc.identifier.issn.none.fl_str_mv 0040-6090
dc.identifier.number.pt_BR.fl_str_mv v. 517, n. 2
identifier_str_mv 0040-6090
v. 517, n. 2
url http://www.repositorio.ufba.br/ri/handle/ri/5995
dc.language.iso.fl_str_mv eng
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dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
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dc.source.pt_BR.fl_str_mv http://dx.doi.org/10.1016/j.tsf.2008.07.007
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