A simulation study of the effect of drift electric fields on the response of radiation detectors using the PENELOPE code

Detalhes bibliográficos
Autor(a) principal: Távora, L. M. N.
Data de Publicação: 2006
Outros Autores: Dias, T. H. V. T., Conde, C. A. N.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10316/4403
https://doi.org/10.1016/j.nima.2006.02.199
Resumo: The effect of the presence of a drift electric field on the response of gaseous and semiconductor radiation detectors to energetic X-rays (energies from 20 to 200 keV) is investigated using the PENELOPE code to simulate the photo-absorption and the slow-down of the electrons produced in Si, Ge, and Xe gas at 1 atm. For typical drift fields, the energy deposited in the detection media is calculated taking into account the energy exchanged by the electrons with the field. The analysis of the calculated distributions shows that the effect of the field on the distributions is negligible in Si and Ge semiconductor detectors, but not in Xe gas detectors, where for the fluctuations introduced by the field for approach the intrinsic values for Xe, and the intrinsic discontinuity in linearity when crosses the Xe K-edge (34.56 keV) is further reduced by [approximate]4%. The simulation data also suggest that this field effect may cause some deviations to the expected Gaussian response of Xe detectors to the absorption of monoenergetic photons.
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spelling A simulation study of the effect of drift electric fields on the response of radiation detectors using the PENELOPE codeGas detectorsSemiconductor detectorsX-ray and gamma-ray spectra distortionElectric-field effectsMonte Carlo simulationThe effect of the presence of a drift electric field on the response of gaseous and semiconductor radiation detectors to energetic X-rays (energies from 20 to 200 keV) is investigated using the PENELOPE code to simulate the photo-absorption and the slow-down of the electrons produced in Si, Ge, and Xe gas at 1 atm. For typical drift fields, the energy deposited in the detection media is calculated taking into account the energy exchanged by the electrons with the field. The analysis of the calculated distributions shows that the effect of the field on the distributions is negligible in Si and Ge semiconductor detectors, but not in Xe gas detectors, where for the fluctuations introduced by the field for approach the intrinsic values for Xe, and the intrinsic discontinuity in linearity when crosses the Xe K-edge (34.56 keV) is further reduced by [approximate]4%. The simulation data also suggest that this field effect may cause some deviations to the expected Gaussian response of Xe detectors to the absorption of monoenergetic photons.http://www.sciencedirect.com/science/article/B6TJM-4JKJSCP-3/1/3af24dda8150f1611ede9a26a32189f32006info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleaplication/PDFhttp://hdl.handle.net/10316/4403http://hdl.handle.net/10316/4403https://doi.org/10.1016/j.nima.2006.02.199engNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 562:1 (2006) 306-310Távora, L. M. N.Dias, T. H. V. T.Conde, C. A. N.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2020-11-06T16:49:20Zoai:estudogeral.uc.pt:10316/4403Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T20:59:51.916071Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv A simulation study of the effect of drift electric fields on the response of radiation detectors using the PENELOPE code
title A simulation study of the effect of drift electric fields on the response of radiation detectors using the PENELOPE code
spellingShingle A simulation study of the effect of drift electric fields on the response of radiation detectors using the PENELOPE code
Távora, L. M. N.
Gas detectors
Semiconductor detectors
X-ray and gamma-ray spectra distortion
Electric-field effects
Monte Carlo simulation
title_short A simulation study of the effect of drift electric fields on the response of radiation detectors using the PENELOPE code
title_full A simulation study of the effect of drift electric fields on the response of radiation detectors using the PENELOPE code
title_fullStr A simulation study of the effect of drift electric fields on the response of radiation detectors using the PENELOPE code
title_full_unstemmed A simulation study of the effect of drift electric fields on the response of radiation detectors using the PENELOPE code
title_sort A simulation study of the effect of drift electric fields on the response of radiation detectors using the PENELOPE code
author Távora, L. M. N.
author_facet Távora, L. M. N.
Dias, T. H. V. T.
Conde, C. A. N.
author_role author
author2 Dias, T. H. V. T.
Conde, C. A. N.
author2_role author
author
dc.contributor.author.fl_str_mv Távora, L. M. N.
Dias, T. H. V. T.
Conde, C. A. N.
dc.subject.por.fl_str_mv Gas detectors
Semiconductor detectors
X-ray and gamma-ray spectra distortion
Electric-field effects
Monte Carlo simulation
topic Gas detectors
Semiconductor detectors
X-ray and gamma-ray spectra distortion
Electric-field effects
Monte Carlo simulation
description The effect of the presence of a drift electric field on the response of gaseous and semiconductor radiation detectors to energetic X-rays (energies from 20 to 200 keV) is investigated using the PENELOPE code to simulate the photo-absorption and the slow-down of the electrons produced in Si, Ge, and Xe gas at 1 atm. For typical drift fields, the energy deposited in the detection media is calculated taking into account the energy exchanged by the electrons with the field. The analysis of the calculated distributions shows that the effect of the field on the distributions is negligible in Si and Ge semiconductor detectors, but not in Xe gas detectors, where for the fluctuations introduced by the field for approach the intrinsic values for Xe, and the intrinsic discontinuity in linearity when crosses the Xe K-edge (34.56 keV) is further reduced by [approximate]4%. The simulation data also suggest that this field effect may cause some deviations to the expected Gaussian response of Xe detectors to the absorption of monoenergetic photons.
publishDate 2006
dc.date.none.fl_str_mv 2006
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10316/4403
http://hdl.handle.net/10316/4403
https://doi.org/10.1016/j.nima.2006.02.199
url http://hdl.handle.net/10316/4403
https://doi.org/10.1016/j.nima.2006.02.199
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 562:1 (2006) 306-310
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv aplication/PDF
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
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reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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