Alkali-Doped Nanopaper Membranes Applied as a Gate Dielectric in FETs and Logic Gates with an Enhanced Dynamic Response

Detalhes bibliográficos
Autor(a) principal: Gaspar, Diana
Data de Publicação: 2023
Outros Autores: Martins, Jorge, Carvalho, José Tiago, Grey, Paul, Simões, Rogério, Fortunato, Elvira, Martins, Rodrigo, Pereira, Luís
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10362/154932
Resumo: Funding Information: The manuscript was written mainly by D.G. with the contributions of all authors. The conceptualization of the work was made by D.G. and L.P. The majority of the experimental work, fabrication, and characterization of the nanopaper was conducted by D.G. with support from P.G. and J.T.C. on the functionalization and electrochemical characterization. The electrical characterization and endurance tests were supported by J.M.. R.S., E.F., R.M., and L.P. were involved in the writing─review and editing of the manuscript. The funding acquisition was ensured by D.G., L.P., E.F., and R.M. This work was supported by LISBOA-05-3559-FSE-000007 and CENTRO-04-3559-FSE-000094 operations, cofunded by the Lisboa2020, Centro 2020 Programme, Portugal 2020, European Union, through the European Social Fund as well as by Fundacao para a Ciencia e Tecnologia (FCT) and Agencia Nacional de Inovacao (ANI). This work was also supported by the FEDER funds through the COMPETE 2020 Program and the National Funds through the FCT-Portuguese Foundation for Science and Technology under Project No. POCI-01- 0145-FEDER-007688, Reference UIDB/50025/2020-2023.The authors would like to acknowledge the European Commission under Project NewFun (ERC-StG-2014). Publisher Copyright: © 2023 The Authors. Published by American Chemical Society.
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spelling Alkali-Doped Nanopaper Membranes Applied as a Gate Dielectric in FETs and Logic Gates with an Enhanced Dynamic Responsecellulose-based FETscellulose-based logic gatesionic dopingnanocellulosepaper electronicsMaterials Science(all)Funding Information: The manuscript was written mainly by D.G. with the contributions of all authors. The conceptualization of the work was made by D.G. and L.P. The majority of the experimental work, fabrication, and characterization of the nanopaper was conducted by D.G. with support from P.G. and J.T.C. on the functionalization and electrochemical characterization. The electrical characterization and endurance tests were supported by J.M.. R.S., E.F., R.M., and L.P. were involved in the writing─review and editing of the manuscript. The funding acquisition was ensured by D.G., L.P., E.F., and R.M. This work was supported by LISBOA-05-3559-FSE-000007 and CENTRO-04-3559-FSE-000094 operations, cofunded by the Lisboa2020, Centro 2020 Programme, Portugal 2020, European Union, through the European Social Fund as well as by Fundacao para a Ciencia e Tecnologia (FCT) and Agencia Nacional de Inovacao (ANI). This work was also supported by the FEDER funds through the COMPETE 2020 Program and the National Funds through the FCT-Portuguese Foundation for Science and Technology under Project No. POCI-01- 0145-FEDER-007688, Reference UIDB/50025/2020-2023.The authors would like to acknowledge the European Commission under Project NewFun (ERC-StG-2014). Publisher Copyright: © 2023 The Authors. Published by American Chemical Society.The market for flexible, hybrid, and printed electronic systems, which can appear in everything from sensors and wearables to displays and lighting, is still uncertain. What is clear is that these systems are appearing every day, enabling devices and systems that can, in the near future, be crumpled up and tucked in our pockets. Within this context, cellulose-based modified nanopapers were developed to serve both as a physical support and a gate dielectric layer in field-effect transistors (FETs) that are fully recyclable. It was found that the impregnation of those nanopapers with sodium (Na+) ions allows for low operating voltage FETs (<3 V), with mobility above 10 cm2 V-1 s-1, current modulation surpassing 105, and an improved dynamic response. Thus, it was possible to implement those transistors into simple circuits such as inverters, reaching a clear discrimination between logic states. Besides the overall improvement in electrical performance, these devices have shown to be an interesting alternative for reliable, sustainable, and flexible electronics, maintaining proper operation even under stress conditions.UNINOVA-Instituto de Desenvolvimento de Novas TecnologiasCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)DCM - Departamento de Ciência dos MateriaisRUNGaspar, DianaMartins, JorgeCarvalho, José TiagoGrey, PaulSimões, RogérioFortunato, ElviraMartins, RodrigoPereira, Luís2023-07-06T22:16:34Z2023-02-152023-02-15T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article8application/pdfhttp://hdl.handle.net/10362/154932eng1944-8244PURE: 65371213https://doi.org/10.1021/acsami.2c20486info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T05:37:23Zoai:run.unl.pt:10362/154932Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:55:51.359655Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Alkali-Doped Nanopaper Membranes Applied as a Gate Dielectric in FETs and Logic Gates with an Enhanced Dynamic Response
title Alkali-Doped Nanopaper Membranes Applied as a Gate Dielectric in FETs and Logic Gates with an Enhanced Dynamic Response
spellingShingle Alkali-Doped Nanopaper Membranes Applied as a Gate Dielectric in FETs and Logic Gates with an Enhanced Dynamic Response
Gaspar, Diana
cellulose-based FETs
cellulose-based logic gates
ionic doping
nanocellulose
paper electronics
Materials Science(all)
title_short Alkali-Doped Nanopaper Membranes Applied as a Gate Dielectric in FETs and Logic Gates with an Enhanced Dynamic Response
title_full Alkali-Doped Nanopaper Membranes Applied as a Gate Dielectric in FETs and Logic Gates with an Enhanced Dynamic Response
title_fullStr Alkali-Doped Nanopaper Membranes Applied as a Gate Dielectric in FETs and Logic Gates with an Enhanced Dynamic Response
title_full_unstemmed Alkali-Doped Nanopaper Membranes Applied as a Gate Dielectric in FETs and Logic Gates with an Enhanced Dynamic Response
title_sort Alkali-Doped Nanopaper Membranes Applied as a Gate Dielectric in FETs and Logic Gates with an Enhanced Dynamic Response
author Gaspar, Diana
author_facet Gaspar, Diana
Martins, Jorge
Carvalho, José Tiago
Grey, Paul
Simões, Rogério
Fortunato, Elvira
Martins, Rodrigo
Pereira, Luís
author_role author
author2 Martins, Jorge
Carvalho, José Tiago
Grey, Paul
Simões, Rogério
Fortunato, Elvira
Martins, Rodrigo
Pereira, Luís
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
DCM - Departamento de Ciência dos Materiais
RUN
dc.contributor.author.fl_str_mv Gaspar, Diana
Martins, Jorge
Carvalho, José Tiago
Grey, Paul
Simões, Rogério
Fortunato, Elvira
Martins, Rodrigo
Pereira, Luís
dc.subject.por.fl_str_mv cellulose-based FETs
cellulose-based logic gates
ionic doping
nanocellulose
paper electronics
Materials Science(all)
topic cellulose-based FETs
cellulose-based logic gates
ionic doping
nanocellulose
paper electronics
Materials Science(all)
description Funding Information: The manuscript was written mainly by D.G. with the contributions of all authors. The conceptualization of the work was made by D.G. and L.P. The majority of the experimental work, fabrication, and characterization of the nanopaper was conducted by D.G. with support from P.G. and J.T.C. on the functionalization and electrochemical characterization. The electrical characterization and endurance tests were supported by J.M.. R.S., E.F., R.M., and L.P. were involved in the writing─review and editing of the manuscript. The funding acquisition was ensured by D.G., L.P., E.F., and R.M. This work was supported by LISBOA-05-3559-FSE-000007 and CENTRO-04-3559-FSE-000094 operations, cofunded by the Lisboa2020, Centro 2020 Programme, Portugal 2020, European Union, through the European Social Fund as well as by Fundacao para a Ciencia e Tecnologia (FCT) and Agencia Nacional de Inovacao (ANI). This work was also supported by the FEDER funds through the COMPETE 2020 Program and the National Funds through the FCT-Portuguese Foundation for Science and Technology under Project No. POCI-01- 0145-FEDER-007688, Reference UIDB/50025/2020-2023.The authors would like to acknowledge the European Commission under Project NewFun (ERC-StG-2014). Publisher Copyright: © 2023 The Authors. Published by American Chemical Society.
publishDate 2023
dc.date.none.fl_str_mv 2023-07-06T22:16:34Z
2023-02-15
2023-02-15T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/154932
url http://hdl.handle.net/10362/154932
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 1944-8244
PURE: 65371213
https://doi.org/10.1021/acsami.2c20486
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eu_rights_str_mv openAccess
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