Planar Dual-Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates

Detalhes bibliográficos
Autor(a) principal: Gaspar, Diana
Data de Publicação: 2018
Outros Autores: Martins, Jorge, Bahubalindruni, Pydi, Pereira, Luís, Fortunato, Elvira, Martins, Rodrigo
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: https://doi.org/10.1002/aelm.201800423
Resumo: project PapEl, reference PTDC/CTM-NAN/5172/2014. PD/BD/52627/2014. SFRH/BD/122286/2016.
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spelling Planar Dual-Gate Paper/Oxide Field Effect Transistors as Universal Logic Gatesdual-gate oxide-based field effect transistorspaper electronicspaper transistorsuniversal logic gatesElectronic, Optical and Magnetic Materialsproject PapEl, reference PTDC/CTM-NAN/5172/2014. PD/BD/52627/2014. SFRH/BD/122286/2016.Electronics on paper enable some specific applications out of conventional ones which require innovative approaches and concepts on the design of devices and systems. Within this context, this work demonstrates that a unique set of characteristics can be combined in planar dual-gate oxide–based field effect transistors with a back floating electrode using paper simultaneously as substrate and dielectric. The working principle of these transistors relies on the formation of electric double layers at the semiconductor/paper and paper/back floating electrode interfaces (associated to ions displacement within the paper) that can be disturbed by a voltage applied at a secondary gate, by the back floating potential or by the combination of both. This feature allows for the control of the on-voltage of the transistors, from depletion to enhancement mode, for instance. Moreover, this specific characteristic allows the implementation of universal logic gates (NAND and NOR) using only one transistor, by setting the proper combination of the voltage level applied at each gate. This way a simple and universal device architecture can be envisaged towards the simplification of the production of low power electronic systems on paper.CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)DCM - Departamento de Ciência dos MateriaisUNINOVA-Instituto de Desenvolvimento de Novas TecnologiasRUNGaspar, DianaMartins, JorgeBahubalindruni, PydiPereira, LuísFortunato, ElviraMartins, Rodrigo2019-06-05T22:21:31Z2018-12-012018-12-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://doi.org/10.1002/aelm.201800423eng2199-160XPURE: 11376513http://www.scopus.com/inward/record.url?scp=85055740789&partnerID=8YFLogxKhttps://doi.org/10.1002/aelm.201800423info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:33:42Zoai:run.unl.pt:10362/71830Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:35:13.685460Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Planar Dual-Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates
title Planar Dual-Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates
spellingShingle Planar Dual-Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates
Gaspar, Diana
dual-gate oxide-based field effect transistors
paper electronics
paper transistors
universal logic gates
Electronic, Optical and Magnetic Materials
title_short Planar Dual-Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates
title_full Planar Dual-Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates
title_fullStr Planar Dual-Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates
title_full_unstemmed Planar Dual-Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates
title_sort Planar Dual-Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates
author Gaspar, Diana
author_facet Gaspar, Diana
Martins, Jorge
Bahubalindruni, Pydi
Pereira, Luís
Fortunato, Elvira
Martins, Rodrigo
author_role author
author2 Martins, Jorge
Bahubalindruni, Pydi
Pereira, Luís
Fortunato, Elvira
Martins, Rodrigo
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
DCM - Departamento de Ciência dos Materiais
UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
RUN
dc.contributor.author.fl_str_mv Gaspar, Diana
Martins, Jorge
Bahubalindruni, Pydi
Pereira, Luís
Fortunato, Elvira
Martins, Rodrigo
dc.subject.por.fl_str_mv dual-gate oxide-based field effect transistors
paper electronics
paper transistors
universal logic gates
Electronic, Optical and Magnetic Materials
topic dual-gate oxide-based field effect transistors
paper electronics
paper transistors
universal logic gates
Electronic, Optical and Magnetic Materials
description project PapEl, reference PTDC/CTM-NAN/5172/2014. PD/BD/52627/2014. SFRH/BD/122286/2016.
publishDate 2018
dc.date.none.fl_str_mv 2018-12-01
2018-12-01T00:00:00Z
2019-06-05T22:21:31Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://doi.org/10.1002/aelm.201800423
url https://doi.org/10.1002/aelm.201800423
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2199-160X
PURE: 11376513
http://www.scopus.com/inward/record.url?scp=85055740789&partnerID=8YFLogxK
https://doi.org/10.1002/aelm.201800423
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
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